RU1H190S N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A • Ultra Low On-Resistance TO-220 TO-220F TO-263 TO-247 • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Applications • Switching Application Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C 190 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ① TC=25°C 720 TC=25°C 190 TC=100°C TC=25°C 120 250 TC=100°C 125 A ② ② A W 0.55 °C/W 1240 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 www.ruichips.com RU1H190S Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Test Condition RU1H190S Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ④ VGS=0V, IDS=250µA V 100 VDS= 100V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=80A 30 2 3 5 µA 4 V ±100 nA 6.5 mΩ 1.2 V Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=80 A, VGS=0V ISD=80A, dlSD/dt=100A/µs 89 ns 175 nC 1.2 Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS= 30V, Frequency=1.0MHz 6500 pF 940 650 29 VDD=30V, RL=30Ω, IDS=80A, VGEN= 10V, RG=6Ω Turn-off Fall Time 38 ns 80 125 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 158 VDS=80V, VGS= 10V, IDS=80A 35 208 nC 52 Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.. Limited by TJmax, IAS =65A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 2 www.ruichips.com RU1H190S Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU1H190S Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU1H190S Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU1H190S Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 6 www.ruichips.com RU1H190S Ordering and Marking Information RU1H190 Package (Available) R : TO-220; S: TO-263 ; Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 7 www.ruichips.com RU1H190S Package Information TO-220FB-3L SYMBOL MM INCH MM SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 Øp1 MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 0.063 A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 - - 3.95 - - 0.156 2.54BSC 0.1BSC 5.08BSC 0.2BSC C 0.48 0.50 0.52 0.019 0.020 0.021 L1 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° E1 - 8.70 - - 0.343 - θ2 1° 3° 5° 1° 3° 5° E2 9.80 10.00 10.20 0.386 0.394 0.401 2.50REF. 0.098REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 8 www.ruichips.com RU1H190S TO-263-2L SYMBOL MM INCH MM MIN NOM MAX MIN NOM MAX SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 L 2.00 2.30 2.60 0.079 0.090 0.102 A1 0 0.10 0.25 0 0.004 0.010 L3 1.17 1.27 1.40 0.046 0.050 0.055 A2 2.59 2.69 2.79 0.102 0.106 0.110 L1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 L4 0.25BSC 0.01BSC b1 1.23 - 1.36 0.048 - 0.052 L2 2.50REF. 0.098REF. c 0.34 - 0.47 0.013 - 0.019 θ 0° - 8° 0° - 8° C1 1.22 - 1.32 0.048 - 0.052 θ1 5° 7° 9° 5° 7° 9° D 8.60 8.70 8.80 0.338 0.343 0.346 θ2 1° 3° 5° 1° 3° 5° E 10.00 10.16 10.26 0.394 0.4 0.404 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Øp1 1.40 1.50 1.60 0.055 0.059 0.063 15.50 0.579 e H 2.54BSC 14.70 15.10 0.1BSC 0.594 0.610 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 9 www.ruichips.com RU1H190S Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2011 10 www.ruichips.com