2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. High input impedance. A L 3 3 C B Top View MARKING 1 1 K R1M 2 E 2 D F PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch H G REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG 40 32 12 300 200 625 150, -55~150 V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob 40 32 12 5000 - 200 2.5 0.1 0.1 1.4 - V V V µA µA http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B V MHz pF Test Conditions IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VEB=12V, IC=0 VCE=3V, IC=100mA IC=200mA, IB=0.2mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SD2142 Elektronische Bauelemente 0.3A , 40V NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2