MMBT589

MMBT589
-1A , -50V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES

High current surface mount PNP silicon switching transistor
for Load management in portable applications
A
L
3
3
C B
Top View
MARKING
1
1
2
K
589
E
2
D
F
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-23
3K
7’ inch
H
G
Collector
REF.

A
B
C
D
E
F

Base
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15

Emitter
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
Junction, Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
-50
-30
-5
-1
310
V
V
V
A
mW
RθJA
403
°C / W
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-emitter cut-off current
Emitter Cut-Off Current
DC Current Gain
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
-50
-30
-5
100
100
80
40
100
-
-
-0.1
-0.1
-0.1
300
-0.25
-0.3
-0.65
-1.2
15
V
V
V
µA
µA
µA
IC= -100µA, IE=0
IC= -10mA, IB=0
IE= -100µA, IC=0
VCB= -30V, IE=0
VCES= -30V
VEB= -4V, IC=0
VCE= -2V, IC= -1mA
VCE= -2V, IC= -500mA
VCE= -2V, IC= -1A
VCE= -2V, IC= -2A
IC= -500mA, IB = -50mA
IC= -1A, IB = -100mA
IC= -2A, IB = -200mA
IC= -1A, IB = -100mA
VCE= -5V,IC= -100mA, f=100MHz
f=1MHz
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Transition frequency
Collector Output Capacitance
VBE(sat)
fT
Cob
http://www.SeCoSGmbH.com/
18-Oct-2013 Rev. B
V
V
MHz
pF
Any changes of specification will not be informed individually.
Page 1 of 3
MMBT589
Elektronische Bauelemente
-1A , -50V
PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
18-Oct-2013 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3
MMBT589
Elektronische Bauelemente
-1A , -50V
PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
18-Oct-2013 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 3