2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE(sat) A L 3 3 CLASSIFICATION OF hFE (1) C B Top View 1 Product-Rank 2SD602-Q 2SD602-R 2SD602-S Range 85~170 120~240 170~340 Marking Code WQ1 WR1 WS1 1 K E 2SD602A-Q 2SD602A-R 2SD602A-S Range 85~170 120~240 170~340 Marking Code XQ XR XS 2 D F Product-Rank 2 H G REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 J REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Symbol 2SD602 2SD602A 2SD602 2SD602A Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings 30 60 25 50 5 500 200 625 150, -55~150 Unit V V V mA mW °C / W °C Any changes of specification will not be informed individually. Page 1 of 3 2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown 2SD602 Voltage 2SD602A Collector to Emitter Breakdown 2SD602 Voltage 2SD602A Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO * hFE (1) * hFE (2) * VCE(sat) fT Cob Min. Typ. Max. 30 60 25 50 5 85 40 - 200 - 0.1 0.1 340 0.6 15 Unit Test Conditions V IC=10µA, IE=0 V IC=10mA, IB=0 V µA µA IE=10µA, IC=0 VCB=20V, IE=0 VEB=5V, IC=0 VCE=10V, IC=150mA VCE=10V, IC=500mA V IC=300mA, IB=30mA MHz VCE=10V, IC=50mA, f=200MHz pF VCB=10V, IE=0, f=1MHz *Pulse test: Pulse width≦350µS, duty cycle≦2.0% http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 2SD602 / 2SD602A Elektronische Bauelemente NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 3