APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 Specification ELWT801-S CUSTOMER Checked by Approved by SUPPLIER Drawn by Approved by Rev. 04 ELWT801-S 1/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 ELWT801-S 1. Description 2. Absolute Maximum Ratings 3. Electro-Optical Characteristics 4. Characteristic Diagram 5. Reliability Test Item and Condition 6. Rank of ELWT801-S 7. Package Dimension 8. Material 9. Packing 10. Soldering 11. Precaution for use 12. Handling of Silicone Resin LEDs 13. Revision History Rev. 04 ELWT801-S 2/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 ELWT801-S 1. Description Features • Package : This surface-mount LED comes White PLCC2 in PLCC standard package White Color • View Angle : 120o dimension. It has a substrate • Technology : InGaN/GaN made up of a molded plastic • MSL : 2a reflector sitting on top of a bent • Reflow : Pb-free Reflow lead frame. The die is attached • ESD : min 2kV within the reflector cavity and • RoHS : Compliant the cavity is encapsulated by silicon. The package design coupled with careful selection of component materials allow Applications these products to perform with • Interior automotive high reliability in a larger • Electronic Signs and temperature range -40℃ to Signals 110℃. The high reliability • Office Automation, Electrical Appliances, feature is crucial to Automotive Industrial Equipment interior and Indoor ESS. Rev. 04 ELWT801-S 3/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 2. Absolute Maximum Ratings Parameter Symbol Value Unit Power Dissipation (Ta=25℃) Pd 127 mW Forward Current (Ta=25℃) IF 30 mA Peak Forward Current (t≤ 10μsec,D≤5/1000,Ta=25℃) IFM 300 mA Reverse Voltage (Ir=10㎂, Ta=25℃) VR 5 V Operating Temperature Topr -40 ~ +110 ℃ Storage Temperature Tstg -40 ~ +110 ℃ Junction Temperature Tj 125 ℃ Soldering Temperature Tsld Reflow Soldering : 260 ℃ for 10sec. Hand Soldering : 315 ℃ for 4sec. ESD (R=1.5kΩ, C= 100pF) Min 2 kV Rev. 04 ELWT801-S 4/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 3. Electro-Optical characteristics Parameter Symbol Condition Min Typ Max Unit VF IF=20 mA 2.7 3.4 4.0 V IV IF=20 mA 560 840 1120 mcd ΦV IF=20 mA - 2520 - mlm X IF=20 mA 0.31 - Y IF=20 mA 0.30 - 2θ1/2 IF=20 mA - 120 - deg. ηop IF=20 mA - 37 - lm/W Rth JA IF=20 mA - 360 - ℃/W Rth JS IF=20 mA - 180 - ℃/W Temperature coefficient of VF -10℃ ≤ T ≤ 100 ℃ TCv IF =20mA - -3.86 - mV/℃ Temperature coefficient of X -10℃ ≤ T ≤ 100 ℃ TCx IF =20mA - -0.07 - 10-3/℃ Temperature coefficient of Y -10℃ ≤ T ≤ 100 ℃ TCy IF =20mA - -0.09 - 10-3/℃ Luminous Intensity Phi V / IV ∂Ω IF =20mA 3.0 3.1 lm/cd Forward Voltage*1*2 Luminous Intensity *3 Luminous Flux Color Coordinate Viewing Angle *4 *5 Optical Efficiency Thermal resistance *6 *1. A tolerance of ±0.05V on forward voltage measurements *2. 99% yield of forward voltage is 2.8 ~ 3.8V *3. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10% *4. Color difference between luminous flux and luminous intensity is Color difference : ± 0.01 *5 2θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity. *6. Thermal resistance = Rth JA : Junction/ambient , Rth JS : Junction/solder point Pad design for improved heat dissipation : Cu-area > Cu 16mm2 per pad, FR4, t=1.6mm Rev. 04 ELWT801-S 5/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 4. Characteristic Diagram Relative Luminous Intensity vs. Forward Current Forward Current vs. Forward Voltage (Ta=25℃ ) (Ta=25℃ ) 2 10 1.4 Relative Luminous Intensity Forward Current IF [mA] 1.2 1 10 1.0 0.8 0.6 0.4 0.2 0 10 2.8 3.0 3.2 3.4 0.0 3.6 0 Forward Voltage VF [V] 5 10 15 20 25 Forward Current IF [mA] 30 35 Spectral distribution Forward Current vs. Temperature (IF=20mA, Ta=25℃ ) 35 1.0 TS 25 Relative Luminous Intensity Forward Current IF [mA] 30 TA 20 15 TA temp : Ambient 10 TS temp : Solder point -20 0 20 40 0.6 0.4 0.2 5 0 -40 0.8 60 80 100 120 Temperature [℃] 0.0 400 500 600 700 800 Dominant Wavelength [nm] Rev. 04 ELWT801-S 6/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 Radiation Diagram Life time (Ta=25℃ ,IF=20mA ) 0 Life time Unit IF = 20mA TA = 25℃ 30,000 Operating hours IF = 30mA TA = 85℃ 7,000 Operating hours 30 -30 60 -60 -90 Condition - 0.5 90 0.5 Ref. 1) 50% degradation time of luminous intensity 2) Calculated values from typical data Forward Current vs. Duty Ratio Forward Current vs. Duty Ratio (Ta=25℃ ) (Ta=85℃ ) 0.35 0.35 tp IF D=tp/T 0.30 T 0.25 0.20 0.15 D= 1 0.5 0.05 0.005 0.10 0.05 0.00 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 TP Maximum Forward Current IF Max [A] Maximum Forward Current IF Max [A] tp IF D=tp/T 0.30 T 0.25 0.20 D= 0.15 1 0.5 0.05 0.005 0.10 0.05 0.00 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 TP Rev. 04 ELWT801-S 7/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 Color vs. Forward Current Color vs. Junction Temperature (IF=20mA ) (Ta=25℃ ) 0.312 0.315 CIECoord. X CIECoord. Y 0.310 CIECoord. X CIECoord. Y 0.308 0.310 0.304 CIE Coord CIE Coord 0.306 0.302 0.300 0.305 0.300 0.298 0.296 0.295 0.294 0.292 0 10 20 0.290 30 -40 Forward Current IF [mA] -20 0 20 40 60 80 100 Junction Temperature [℃] Relative Luminous Intensity vs. Forward Voltage vs. Junction Temperature Junction Temperature (IF=20mA ) (IF=20mA ) 1.1 3.8 Relative Luminous Intensity Forward Voltage VF (V) 3.7 3.6 3.5 3.4 3.3 3.2 1.0 0.9 0.8 3.1 -40 -20 0 20 40 60 80 100 -40 Junction Temperature [℃] -20 0 20 40 60 Junction Temperature [℃] 80 100 Rev. 04 ELWT801-S 8/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 Color. vs. Viewing Angle (Ta=25℃ ,IF=20mA ) CIECoord. X CIECoord. Y 0.33 CIE Coord 0.32 0.31 0.30 -80 -60 -40 -20 0 20 40 Viewing Angle (deg) 60 80 Rev. 04 ELWT801-S 9/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 5 Reliability (1) TEST ITEMS AND RESULTS Standard Test Method Test Item Test Condition Duration / Cycle Number of Damage 2 times 0/30 Resistance to Soldering Heat (Reflow soldering) JEITA ED-4701 300 301 Tsld=260℃, 10sec. (Pre treatment 30oC,70%,168hrs.) Solderability (Reflow Soldering) JEITA ED-4701 300 303 Tsld=215±5℃, 3sec. (using flux, Lead Solder) 1 time Over 95% 0/30 Thermal Shock JEITA ED-4701 300 307 -40℃ ~ 110℃ 20min. (10sec.) 20min. 1000 hrs. 0/77 Temperature Cycle JEITA ED-4701 100 105 -40℃ ~ 25℃ ~ 110℃ ~ 25℃ 25min. 5min. 25min. 5min 1000 hrs. 0/77 High Temperature Storage JEITA ED-4701 200 201 Ta =100℃ 1000 hrs. 0/77 Low Temperature Storage JEITA ED-4701 200 202 Ta =-40℃ 1000 hrs. 0/77 Room temperature Operating Life Internal Reference Ta =25℃, IF =30mA 1000 hrs. 0/77 Steady State Operating Life of High Temperature Internal Reference Ta =100℃, IF =17mA 1000 hrs. 0/77 Steady State Operating Life of High Humidity Heat Internal Reference 85℃, RH=85%, IF =25mA 1000 hrs. 0/77 Steady State Operating Life of Low Temperature Internal Reference Ta =-40℃, IF =30mA 1000 hrs. 0/77 Power and Temperature Cycle JESD22 A-105 Ta=-40℃(20min) ~ 85℃(20min) (Transfer time:20min,1Cycle=1hr) IF =25mA , 2 min. on/off 1000 hrs. 0/77 4 times 0/30 3 Times Negative /Positive 0/30 Vibration JEITA ED-4701 400 403 200m/s2, 100~2000Hz (Sweep 4min.) 48min., 3 directions Electrostatic Discharge JEITA ED-4701 300 304 R=1.5kΩ, C= 100pF Test Voltage = 2kV (2) Criteria for Judging the Damage Criteria for Judgment Item Symbol Condition MIN MAX Forward Voltage VF IF =20mA - Initial × 1.2 Luminous Intensity IV IF =20mA Initial × 0.8 - Rev. 04 ELWT801-S 10/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 6. Rank of ELWT801-S 1) Bin Code Description [Ta = 25℃, IF = 20mA] Bin Code Forward Voltage Luminous Intensity CIE C V1 KK Forward Voltage (V) @ IF = 20mA Bin Code D C B A Min. 2.7 3.0 3.3 3.7 Luminous Intensity (mcd) @ IF = 20mA Max. Bin Code Min. Max. 3.0 U2 560 710 3.3 V1 710 900 3.7 V2 900 1,120 4.0 Color Rank @ IF = 20mA FK FL GK GL HK HL IK IL JK JL KK KL LK LL MK ML NK NL OK OL PK PL QK QL Available ranks [Note] All measurements were made under the standardized environment of SSC. Rev. 04 ELWT801-S 11/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 2) CIE Chromaticity Diagram 0.9 0.8 0.7 CIE coord. (Y) 0.6 0.5 0.4 0.3 520 515 525 530 535 540 510 545 550 555 505 560 565 570 500 575 580 585 590 495 595 600 610 620 490 630 830 0.2 485 480 475 470 460 0.1 0.0 -0.1 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 CI Ecoord. (X) Rev. 04 ELWT801-S 12/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 0.40 QL PL QK OL PK CIE coord.(Y) 0.35 NL OK ML NK LL 0.30 KL MK LK KK JL JK IL HL IL GL HK FL GK FK 0.25 0.20 0.25 0.30 0.35 0.40 CIE coord. (X) Rev. 04 ELWT801-S 13/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 <IF=20mA, Ta=25℃> ● COLOR RANK Available ranks * Measurement Uncertainty of the Color Coordinates : ± 0.005 Rev. 04 ELWT801-S 14/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 7. Package Dimension 1.9 2.80 2.20 0.85 1.50 3.50 3.20 2.40 1.65 0.80 Anode C0.8 0.50 Cathode 0.15 Cathode mark (-) P addesign for im proved heat dissipation R ecom m ended Solder P ad + Heat pad C u-area > 16m m 2 Solder resist 8. Material item Chip Package Encapsulate Electrodes Material InGaN Heat-Resistant Polymer Silicone Resin + Phosphor Ag Plating Copper Alloy Rev. 04 ELWT801-S 15/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 9. Packing Package M arking 1.55 ± 0.05 4.0±0.1 0.22±0.05 3.83±0.1 5° 3.5±0.1 8±0.1 1.75±0.1 2.0±0.05 1.0±0.1 8° 3.1±0.1 2.22±0.1 11.4±0.1 180 +0 -3 9.0 ± 0.3 LABLE 2.0 ± 0.2 30° 10 60 13 ±0.2 22 ( Tolerance: ±0.2, Unit: mm ) (1) Quantity : 2000pcs/Reel (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape : Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10º to the carrier tape (4) Package : P/N, Manufacturing data Code No. and quantity to be indicated on a damp proof Package Rev. 04 ELWT801-S 16/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 ● Reel Packing Structure Reel XXX RANK: QUANTITY : XXXX LOT NUMBER : XXXXXXXXXX XXXXXX PART NUMBER : SEOUL SEMICONDUCTOR CO., LTD. HUMIDITY INDICATOR DESI PAK Aluminum Vinyl Bag XXX RANK: QUANTITY : XXXX LOT NUMBER : XXXXXXXXXX PART NUMBER : XXXXXX SEOUL SEMICONDUCTOR CO., LTD. Outer Box Structure Material : Paper(SW3B(B)) SIZE (mm) TYPE a c b 7inch 245 220 142 1 SIDE c XXX RANK: 1 QUANTITY : XXXX TOP LED LOT NUMBER : XXXXXXXXXX RoHS PART NUMBER : XXXXXX b a SEOUL SEMICONDUCTOR CO., LTD. Rev. 04 ELWT801-S 17/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 10. Soldering (1) Lead Solder Lead Solder Lead Solder Pre-heat 120~150℃ Pre-heat time 120 sec. Max. Peak-Temperature 240℃ Max. Soldering time Condition 10 sec. Max. 2.5~5 o C / sec. 2.5~5 C / sec. Pre-heating 120~150 oC 240 oC Max. 10 sec. Max. 60sec. Max. Above 200 oC 120sec. Max. (2) Lead-Free Solder Lead-frame Solder Lead-free Solder Lead Free Solder Pre-heat 150~200℃ Pre-heat time 120 sec. Max. Peak-Temperature 260℃ Max. Soldering time Condition 10 sec. Max. 1~5 oC / sec. 1~5 oC / sec. Pre-heating 150~200 o C 260 oC Max. 10 sec. Max. 60sec. Max. Above 220 oC 120sec. Max. (3) Hand Soldering conditions Do not exceed 4 seconds at maximum 315ºC under soldering iron. (4) The encapsulated material of the LEDs is silicone. Precautions should be taken to avoid the strong pressure on the encapsulated part. So when using the chip mounter, the picking up nozzle that does not affect the silicone resign should be used. (5) It is recommended that the customer use the nitrogen reflow method. (6) Repairing should not be done after the LEDs have been soldered. (7) Reflow soldering should not be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. Note : In case that the soldered products are reused in soldering process, we don’t guarantee the products. Rev. 04 ELWT801-S 18/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 11. Precaution for use (1) Storage In order to avoid the absorption of moisture, it is recommended to store in a dry box (or a desicator) with a desiccant. Otherwise, to store them in the following environment is recommended. Temperature : 5ºC ~30ºC Humidity : maximum 70%RH (2) Attention after open. LED is correspond to SMD, when LED be soldered dip, interfacial separation may affect the light transmission efficiency, causing the light intensity to drop. Attention in followed; Keeping of a fraction Temperature : 5 ~ 40ºC Humidity : less than 30% (3) In the case of more than 4 week passed after opening or change color of indicator on desiccant, components shall be dried 10-12hr. at 60±5ºC. (4) Silver plating might be tarnished in the environment that contains corrosive gases and materials. Also any product that has tarnished lead might be decreased the solder-ability and optical-electrical properties compare to normal ones. Please do not expose the product in the corrosive environment during the storage. (5) Any mechanical force or any excess vibration shall not be accepted to apply during cooling process to normal temperature after soldering. (6) Quick cooling shall be avoided. (7) Components shall not be mounted on warped direction of PCB. (8) Anti radioactive ray design is not considered for the products. (9) This device should not be used in any type of fluid such as water, oil, organic solvent etc. When washing is required, IPA should be used. (10) When the LEDs are illuminating, operating current should be decided after considering the ambient maximum temperature. (11) The LEDs must be soldered within 4 week after opening the moisture-proof packing. (12) Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place. (13) The appearance and specifications of the product may be modified for improvement without notice. Rev. 04 ELWT801-S 19/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 12. Handling of Silicone Resin LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) SSC suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. Rev. 04 ELWT801-S 20/ 21 29. November. 2011 www.seoulsemicon.com APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 13. Revision History Revision No Date of Change 00 December.30 2010 01 January.21 2011 02 May. 18 2011 4,5,6,7,8,9 03 November. 04 2011 4,7 04 November. 29 2011 11,12,13, 14,19 Page Summary The institution of New Spec. Update Characteristics Update Characteristics & Diagram Update Duty characteristics Update bin code, CIE Chromaticity Diagram and precaution for use Rev. 04 ELWT801-S 21/ 21 29. November. 2011 www.seoulsemicon.com