TAYCHIPST ERA12-10

ERA12-02 THRU ERA22-10
FAST RECOVERY DIODE
200V-1000V 0.5A
FEATURES
Ultra small package, possible for 5mm pitch automatic
insertion
High voltage by mesa design
High reliability
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute maximum ratings
Item
Symbol
Conditions
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Resistive load (Ta=40°C)
Surge current
IFSM
Sine wave 10ms
Operating junction temperature
Storage temperature
Rating
-02 -04 -06 -08 -10
Unit
200 400 600 800 1000
V
0.5
A
10
A
Tj
-40 to +140
°C
Tstg
-40 to +140
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=0.5A
Reverse current
IRRM
VR=VRRM
Reverse recovery time
t rr
IF=0.1A, IR=0.1A
E-mail: [email protected]
1 of 2
Max.
Unit
1.5
V
10
0.4
µA
µs
Web Site: www.taychipst.com
ERA12-02 THRU ERA22-10
200V-1000V 0.5A
FAST RECOVERY DIODE
RATINGS AND CHARACTERISTICS CURVES
ERA22-02 THRU ERA22-10
Forward characteristics
Reverse characteristics
100
3
50
30
1.0
10
IF
[A] 0.5
5
3
IR
[µA]
1.0
0.5
0.3
0.1
0.05
0.1
0.03
0
0.2
0.4
0.6
0.8
1.0
1.2
0.05
0.03
0
1.4
100
200
300
VF [V]
400
500
600
700
VR [V]
Reverse characteristics
Forward characteristics
100
3
50
30
1.0
10
5
3
IR
IF 0.5
[A]
[µA]
1.0
0.5
0.3
0.1
0.05
0.1
0.03
0.05
0.03
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
200
400
600
800 1000 1200 1400
VF [V]
VR [V]
Current derating (IF(AV)-Ta)
Junction capacitance characteristics
0.7
10
0.6
0.5
5
IF(AV)
[A]
Cj
[pF]
0.4
3
0.3
0.2
1
0.1
0
0.5
0
20
40
60
80
100
120
140
E-mail: [email protected]
10
30
50
100
200
VR [V]
Ta [°C]
2 of 2
Web Site: www.taychipst.com