VS-8ETH06SPbF, VS-8ETH06-1PbF Vishay High Power Products Hyperfast Rectifier, 8 A FRED Pt® FEATURES VS-8ETH06SPbF • Hyperfast recovery time VS-8ETH06-1PbF • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Base cathode 2 2 • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified 3 1 3 Anode 1 N/C N/C D2PAK DESCRIPTION/APPLICATIONS Anode State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the ac-to-dc section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. TO-262 PRODUCT SUMMARY trr (typical) 18 ns IF(AV) 8A VR 600 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 144 °C 8 Non-repetitive peak surge current IFSM TJ = 25 °C 90 Peak repetitive forward current Operating junction and storage temperatures A IFM 16 TJ, TStg - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 8 A MIN. TYP. MAX. 600 - - - 2.0 2.4 IF = 8 A, TJ = 150 °C - 1.3 1.8 VR = VR rated - 0.3 50 TJ = 150 °C, VR = VR rated - 55 500 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 600 V - 17 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Document Number: 94027 Revision: 11-Mar-10 For technical questions, contact: [email protected] www.vishay.com 1 VS-8ETH06SPbF, VS-8ETH06-1PbF Hyperfast Rectifier, 8 A FRED Pt® Vishay High Power Products DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr MIN. TYP. MAX. - 18 22 IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V - 20 25 TJ = 25 °C - 25 - TJ = 125 °C UNITS ns - 40 - - 2.4 - - 4.8 - TJ = 25 °C - 25 - TJ = 125 °C - 120 - - 33 - ns - 12 - A - 220 - nC MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC - 1.4 2 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - Peak recovery current Reverse recovery charge IRRM Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge TJ = 25 °C TJ = 125 °C TJ = 125 °C Qrr IF = 8 A dIF/dt = 200 A/μs VR = 390 V IF = 8 A dIF/dt = 600 A/μs VR = 390 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device www.vishay.com 2 - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Case style D2PAK 8ETH06S Case style TO-262 8ETH06-1 For technical questions, contact: [email protected] °C/W Document Number: 94027 Revision: 11-Mar-10 VS-8ETH06SPbF, VS-8ETH06-1PbF Hyperfast Rectifier, 8 A FRED Pt® 1000 IR - Reverse Current (µA) 100 IF - Instantaneous Forward Current (A) Vishay High Power Products 10 TJ = 175 °C TJ = 150 °C TJ = 25 °C 1 0.1 TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 2 1 3 0 4 100 200 400 300 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 . 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94027 Revision: 11-Mar-10 For technical questions, contact: [email protected] www.vishay.com 3 VS-8ETH06SPbF, VS-8ETH06-1PbF Hyperfast Rectifier, 8 A FRED Pt® Vishay High Power Products 60 170 VR = 390 V TJ = 125 °C TJ = 25 °C 50 160 DC trr (ns) Allowable Case Temperature (°C) 180 150 Square wave (D = 0.50) Rated VR applied 140 40 30 20 130 See note (1) 10 100 120 0 2 4 6 8 10 12 IF = 16 A IF = 8 A 1000 dIF/dt (A/µs) IF(AV) - Average Forward Current (A) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 20 400 18 350 RMS limit 16 300 VR = 390 V TJ = 125 °C TJ = 25 °C 14 12 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 10 8 6 4 DC 2 Qrr (nC) Average Power Loss (W) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current IF = 16 A IF = 8 A 250 200 150 100 50 0 0 0 2 4 6 8 10 12 100 dIF/dt (A/µs) IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 1000 Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94027 Revision: 11-Mar-10 VS-8ETH06SPbF, VS-8ETH06-1PbF Hyperfast Rectifier, 8 A FRED Pt® Vishay High Power Products VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94027 Revision: 11-Mar-10 For technical questions, contact: [email protected] www.vishay.com 5 VS-8ETH06SPbF, VS-8ETH06-1PbF Hyperfast Rectifier, 8 A FRED Pt® Vishay High Power Products ORDERING INFORMATION TABLE Device code VS- 8 E T H 06 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (8 A) 3 - E = Single diode 4 - T = TO-220, D2PAK 5 - H = Hyperfast rectifier 6 - Voltage rating (06 = 600 V) 7 - 8 - TRL PbF 8 9 S = D2PAK -1 = TO-262 None = Tube (50 pieces) TRL = Tape and reel (left oriented, for D2PAK package) TRR = Tape and reel (right oriented, for D2PAK package) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95014 Part marking information www.vishay.com/doc?95008 Packaging information www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94027 Revision: 11-Mar-10 Outline Dimensions Vishay High Power Products D2PAK, TO-262 DIMENSIONS FOR D2PAK in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating 2x e Base Metal (4) b1, b3 H Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch Document Number: 95014 Revision: 31-Mar-09 e (7) 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Outline conforms to JEDEC outline TO-263AB For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Outline Dimensions D2PAK, TO-262 Vishay High Power Products DIMENSIONS FOR TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches www.vishay.com 2 2 (6) 3 Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] Document Number: 95014 Revision: 31-Mar-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1