Product specification 1N5400-1N5408 Features Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 200A Peak Low Reverse Leakage Current MaximumRatingsandElectricalCharacteristics @ TA = 25 Parameter unless otherwise specified Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage 1N 5400 1N 5401 1N 5402 1N 5404 1N 5406 1N 5407 1N 5408 Unit 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V VR RMS Reverse Voltage VR(RMS) IO 3.0 A IFSM 200 A VFM 1.0 V Average Rectified Output Current @ TA = 105 *1 Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @ IF = 3.0A Peak Reverse Current @ TA = 25 10 IRM Typical Junction Capacitance *2 Cj Typical Thermal Resistance Junction to Ambient Operating and Storage Temperature Range R JA Tj, TSTG A 100 at Rated DC Blocking Voltage @ TA = 150 50 25 15 pF K/W -65 to 150 *1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. *2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 1N5400-1N5408 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 4.0 3.0 2.0 1.0 0 25 50 75 100 125 150 175 200 100 10 1.0 0.2 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 200 100 1N5400 - 1N5405 100 Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) Tj = 25ºC 1N5406 - 1N5408 10 Tj = 25°C Pulse width = 8.3ms f = 1MHz Tj = 25ºC 1.0 10 1.0 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current http://www.twtysemi.com [email protected] 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 4008-318-123 2 of 2