SMD SMD Type Type Product specification 2SA1415 Features Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO -5 V Collector Current IC -140 mA Collector Current (Pulse) ICP -200 mA PC 500 mW PC * 1.3 W Tj 150 Tstg -55 to +150 Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current ICBO VCB = -80V , IE = 0 -100 nA Emitter Cut-off Current IEBO VEB = -4V , IC = 0 -100 nA DC Current Gain hFE VCE = -5V , IC = -10mA Collector-Emitter Saturation Voltage Gain-Bandwidth Product VCE(sat) IC = -50mA , IB = -5mA fT Collector Output Capacitance Cob Turn-On Time ton Storage Time tstg Fall Time http://www.twtysemi.com VCE = -10V , IC = -10mA VCB = -10V , IE = 0 , f = 1MHz 100 400 -0.14 -0.4 V 150 MHz 4 pF 0.1 See Test Circuit. tf [email protected] 1.5 ìs 0.1 4008-318-123 1 of 3 SMD Type Product specification 2SA1415 Test Circuit hFE Classification AA Marking Rank hFE R 100 S 200 140 T 280 200 400 Electrical Characteristics Curves http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 SMD Type Product specification 2SA1415 http://www.twtysemi.com [email protected] 4008-318-123 3 of 3