Transistors IC SMD Type Product specification 2SC4519 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low collector-to-emitter saturation voltage. 1 0.55 Adoption of FBET process. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast switching speed. +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small-sized package. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector current (pulse) Icp 1 A Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SC4519 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 45V, IE=0 0.5 ìA Emitter cutoff current IEBO VEB = 3V, IC=0 0.5 ìA DC current gain hFE VCE = 2V , IC = 50mA fT VCE = 2V , IC = 50mA Gain bandwidth product Output capacitance Cob Testconditons Min Typ 100 VCB = 10V , f = 1.0MHz 400 360 MHz 4 pF Collector-emitter saturation voltage VCE(sat) IC = 200mA , IB = 10mA 0.15 0.45 V Base-emitter saturation voltage VBE(sat) IC = 200mV , IB = 10mA 0.8 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 45 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V Turn-on time ton 60 120 ns Storage time tstg 150 270 ns tf 200 350 ns Fall time hFE Classification TT Marking Rank 4 5 6 hFE 100 200 140 280 200 400 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2