Product specification 2SB1123 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector current (pulse) ICP -4 A Collector dissipation PC 0.5 W 1.3 W Mounted on a ceramic board (250mm250.8mm) Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 2SB1123 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -50V , IE = 0 -100 nA Emitter-base cutoff current IEBO VEB = -4 V , IC = 0 -100 nA DC current Gain hFE VCE = -2V , IC = -100mA fT VCE = -10V , IC = -50mA 150 MHz VCB = -10V , f = 1MHz 22 pF Gain bandwidth product Output capacitance Cob Testconditons Min Typ 100 560 Collector-emitter saturation voltage VCE(sat) IC = -1A , IB = -50mA -0.3 -0.7 V Base-emitter saturation voltage VBE(sat) IC = -1A , IB = -50mA -0.9 -1.2 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -60 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -50 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -6 V Turn-ON Time ton 60 ns Storage Time tstg 450 ns tf 30 ns Fall Time hFE Classification BF Marking Rank hFE R 100 S 200 http://www.twtysemi.com 140 T 280 200 U 400 [email protected] 280 560 4008-318-123 2 of 2