TYSEMI 2SB1188

Product specification
2SB1188
Features
Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base Voltage
VCBO
-40
V
Collector-emitter Voltage
VCEO
-32
V
Emitter-base Voltage
VEBO
-5
V
IC
-2
A
ICP *
-3
A
PC
0.5
W
Collector current
Collector power dissipation
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* PW=100ms
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltae
BVCBO
IC = -50 A
-40
V
Collector-emitter breakdown voltage
BVCEO
IC = -1mA
-32
V
Emitter-base breakdown voltage
BVEBO
IE = -50 A
-5
V
Collector cutoff current
ICBO
VCB = -20V
-1
ìA
Emitter cutoff current
IEBO
VEB = -4V
-1
ìA
-0.8
V
Collector-Emitter Saturation Voltage
VCE(sat) IC = -2A , IB = -0.2A
DC current transfer ratio
hFE
Transition frequency
fT
Output Capacitance
Cob
VCE = -3V , IC = -0.5A
-0.5
82
390
VCE = -5V , IE = 0.5A , f = 30MHz
100
MHz
VCB = -10V , IE = 0, f = 1MHz
50
pF
hFE Classification
BC
Marking
Rank
P
Q
R
hFE
82 180
120 270
180 390
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