Transistors IC SMD Type Product specification 2SD1949 Features High current.(IC=5A) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=1mA 50 V Collector-emitter breakdown voltage BVCEO VCB=30V 50 V Emitter-base breakdown voltage BVEBO VEB=4V 5 V Collector cutoff current ICBO VCE/IC=3V/0.01A 0.5 ìA Emitter cutoff current IEBO VCE=5V , IE= -20mA , f=100MHz 0.5 ìA DC current transfer ratio hFE VCB=10V , IE=0A , f=1MHz Collector-emitter saturation voltage 120 390 VCE(sat) IC=100ìA Output capacitance fT Transition frequency Cob 0.4 V IE=100ìA 250 MHz IC/IB=150mA/15mA 6.5 pF hFE Classification Y Marking Rank Q R hFE 120 270 180 390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1