Transistors IC SMD Type Product specification 2SC4522 TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Large current capacity. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Fast switching speed. +0.15 5.55 -0.15 Low collector-to-emitter saturation voltage. +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Collector current (pulse) ICP 8 A Collector dissipation * PC 1 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SC4522 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 45V, IE=0 1 ìA Emitter cutoff current IEBO VEB = 2V, IC=0 10 ìA DC current gain hFE Gain bandwidth product Output capacitance VCE =2V , IC = 500mA 100 VCE =2V , IC = 5A 40 400 fT VCE = 2V , IC = 500mA 300 MHz Cob VCB = 10V , f = 1.0MHz 40 pF Collector-emitter saturation voltage VCE(sat) IC = 2.5A , IB = 125mA 0.25 0.7 V Base-emitter saturation voltage VBE(sat) IC = 2.5A , IB = 125mA 0.95 1.3 V Collector-base breakdown voltage V(BR)CBO IC = 100ìA , IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 45 V Emitter-base breakdown voltage V(BR)EBO IE = 100ìA , IC = 0 5 V Turn-on time ton 50 100 ns Storage time tstg 150 270 ns tf 180 350 ns Fall time hFE Classification Rank R S T hFE 100 200 140 280 200 400 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2