TYSEMI 2SC4522

Transistors
IC
SMD Type
Product specification
2SC4522
TO-252
Features
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Large current capacity.
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
0.127
max
3 .8 0
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Fast switching speed.
+0.15
5.55 -0.15
Low collector-to-emitter saturation voltage.
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
60
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
5
A
Collector current (pulse)
ICP
8
A
Collector dissipation *
PC
1
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
2SC4522
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 45V, IE=0
1
ìA
Emitter cutoff current
IEBO
VEB = 2V, IC=0
10
ìA
DC current gain
hFE
Gain bandwidth product
Output capacitance
VCE =2V , IC = 500mA
100
VCE =2V , IC = 5A
40
400
fT
VCE = 2V , IC = 500mA
300
MHz
Cob
VCB = 10V , f = 1.0MHz
40
pF
Collector-emitter saturation voltage
VCE(sat) IC = 2.5A , IB = 125mA
0.25
0.7
V
Base-emitter saturation voltage
VBE(sat) IC = 2.5A , IB = 125mA
0.95
1.3
V
Collector-base breakdown voltage
V(BR)CBO IC = 100ìA , IE = 0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
45
V
Emitter-base breakdown voltage
V(BR)EBO IE = 100ìA , IC = 0
5
V
Turn-on time
ton
50
100
ns
Storage time
tstg
150
270
ns
tf
180
350
ns
Fall time
hFE Classification
Rank
R
S
T
hFE
100 200
140 280
200 400
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2