Product specification 2SB1124 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector current (pulse) ICP -6 A Collector dissipation PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 2SB1124 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -40V , IE = 0 -1 ìA Emitter cutoff current IEBO VCB = -4V , IE = 0 -1 ìA DC current Gain hFE VCE = -2V , IC = -100mA fT VCE = -10V , IC = -50mA 150 MHz VCB = -10V , f = 1MHz 39 pF Gain bandwidth product Output capacitance Cob 100 VCE(sat) IC = -2A , IB = -100mA Collector-emitter saturation voltage VBE(sat) IC = -2A , IB = -100mA Base-emitter saturation voltage 560 -0.35 -0.7 -0.94 -1.2 V V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -50 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -6 V Turn-on time ton 70 ns Storage time tstg 450 ns tf 35 ns Fall time hFE Classification BG Marking Rank hFE R 100 S 200 http://www.twtysemi.com 140 T 280 200 U 400 [email protected] 280 560 4008-318-123 2 of 2