Transistors SMD Type Product specification 2SC4134 TO-252 Features 6.50 +0.2 5.30-0.2 High breakdown voltage and large current capacity. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Fast switching speed. +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -120 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -6 V Collector current IC -1 A Collector current (pulse) ICP -2 A Collector dissipation PC 0.8 W PC 10 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector dissipation Tc=25 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SC4134 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 100V, IE=0 100 nA Emitter cutoff current IEBO VEB = 4V, IC=0 100 nA DC current gain hFE VCE =5V , IC = 100mA Gain bandwidth product Output capacitance Testconditons Min Typ 100 400 fT VCE = 10V , IC = 100mA 120 MHz Cob VCB = 10V , f = 1.0MHz 8.5 pF Collector-emitter saturation voltage VCE(sat) IC = 400mA , IB = 40mA 0.1 0.4 V Base-emitter saturation voltage VBE(sat) IC = 400mA , IB = 40mA 0.85 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 120 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 100 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 6 V Turn-on time ton 80 ns Storage time tstg 850 ns tf 50 ns Fall time hFE Classification Rank R S T hFE 100 200 140 280 200 400 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2