TYSEMI 2SC4774

Transistors
IC
SMD Type
Product specification
2SC4774
Features
Very low output-on resistance (Ron).
Low capacitance.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
12
V
Collector-emitter voltage
VCEO
6
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
BVCBO
IC=10ìA
12
V
Collector-emitter voltage
BVCEO
IC=1mA
6
V
Emitter-base voltage
BVEBO
IE=10ìA
3
V
Collector cutoff current
ICBO
VCB=10V
0.5
ìA
Emitter cutoff current
IEBO
VEB=2V
0.5
ìA
VCE(sat) IC/IB=10mA/1mA
0.3
V
Collector-emitter saturation voltage
Forward current transfer ratio
Transition frequency
hFE
fT
VCE/IC=5V/5mA
270
VCE=5V, IE= -10mA, f=200MHz
300
560
800
Output capacitance
Cob
VCB=10V, IE=0A, f=1MHz
1
Output-on resistance
Ron
IB=3mA, VI=100mVrms, f=500kHz
2
MHz
1.7
pF
Ù
Marking
Marking
BMS
http://www.twtysemi.com
[email protected]
4008-318-123
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