Transistors IC SMD Type Product specification 2SC4081 Features Low Cob. Cob=2.0pF (Typ.) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 0.15 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage BVCBO IC=50ìA 60 V Collector-emitter voltage BVCEO IC=1mA 50 V Emitter-base voltage BVEBO IE=50ìA 7 V Collector cutoff current ICBO VCB=60V 0.1 ìA Emitter cutoff current IEBO VEB=7V 0.1 ìA Forward current transfer ratio hFE VCE=6V, IC=1mA Collector-emitter saturation voltage 120 560 VCE(sat) IC/IB=50mA/5mA Transition frequency fT Output capacitance Cob VCE=12V, IE=?2mA, f=100MHz VCE=12V, IE=0A, f=1MHz 0.4 180 2 V MHz 3.5 pF hFE Classification Marking BQ BR BS hFE 120 270 180 390 270 560 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1