TYSEMI 2SD2441

Transistors
SMD Type
Product specification
2SD2441
Features
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
10
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
2
A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
1
ìA
Collector-base cutoff current
ICBO
VCB = 7 V, IE = 0
Collector-base voltage
VCBO
IC = 10 ìA, IE = 0
10
V
Collector-emitter voltage
VCEO
IC = 1 mA, IB = 0
10
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
7
V
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
hFE
VCE = 1 V, IC = 400 mA
200
VCE(sat) IC = 1 A, IB = 25 mA
fT
700
0.17
0.25
V
VCB = 60 V, IE = -50 mA, f = 200 MHz
190
MHz
50
pF
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Forward voltage
VF1
IF = 500 mA
1.3
V
Marking
Marking
1V
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