Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2441 Features Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 10 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Peak collector current ICP 1.5 A W Collector power dissipation PC 1 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit 1 ìA Collector-base cutoff current ICBO VCB = 7 V, IE = 0 Collector-base voltage VCBO IC = 10 ìA, IE = 0 10 Collector-emitter voltage VCEO IC = 1 mA, IB = 0 10 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 7 V Forward current transfer ratio Collector-emitter saturation voltage Transition frequency hFE VCE = 1 V, IC = 400 mA VCE(sat) IC = 1 A, IB = 25 mA fT V 200 700 0.17 0.25 V VCB = 60 V, IE = -50 mA, f = 200 MHz 190 MHz 50 pF Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz Forward voltage VF1 IF = 500 mA 1.3 V Marking Marking 1V www.kexin.com.cn 1