Transistors IC SMD Type Product specification BSR13,BSR14 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage (max. 40 V). 1 0.55 High current (max. 800 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BSR13 BSR14 Unit Collector-base voltage VCBO 60 75 V Collector-emitter voltage VCEO 30 40 V Emitter-base voltage VEBO 5 6 V Collector current IC 800 mA Peak collector current ICM 800 mA Peak base current IBM 200 mA mW Total power dissipation Ptot 250 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification BSR13,BSR14 Electrical Characteristics Ta = 25 Parameter Symbol BSR13 ICBO Collector cutoff current BSR14 BSR13 Emitter cutoff current ICBO IEBO Max Unit IE = 0; VCB = 50 V Testconditons Min Typ 30 nA IE = 0; VCB = 50 V; Tj = 150 10 ìA IE = 0; VCB = 60 V 10 nA IE = 0; VCB = 60 V; Tj = 150 10 ìA 30 nA 10 nA IC = 0; VEB = 5 V BSR14 DC current gain * hFE BSR13 DC current gain * hFE IC = 0.1 mA; VCE = 10 V; 35 IC = 1 mA; VCE = 10 V; 50 IC = 10 mA; VCE = 10 V; 75 IC = 150 mA; VCE = 10 V 100 IC = 150 mA; VCE = 1 V; 50 30 IC = 500 mA; VCE = 10 V; BSR14 collector-emitter saturation voltage BSR13 300 40 VCEsat IC = 150 mA; IB = 15 mA BSR14 collector-emitter saturation voltage BSR13 VCEsat IC = 500 mA; IB = 50 mA BSR14 BSR13 base-emitter saturation voltage VBEsat IC = 150 mA; IB = 15 mA BSR14 BSR13 base-emitter saturation voltage 0.6 VBEsat IC = 500 mA; IB = 50 mA BSR14 Collector capacitance BSR13 Transition frequency Cc IE = Ie = 0; VCB = 10 V; f = 1 MHz fT IC = 20 mA; VCE = 20 V;f = 100 MHz BSR14 400 mV 300 mV 1.6 V 1 V 1.3 V 1.2 V 2.6 V 2 V 8 pF 250 MHz 300 MHz Turn-on time ton 35 ns Delay time td 15 ns Rise time tr 20 ns Turn-off time toff 250 ns Storage time ts 200 ns Fall time tf 60 ns * Pulse test: tp 300 ìs; d ICon = 150 mA; IBon = 15 mA; IBoff = -15 mA 0.02. hFE Classification TYPE BSR13 BSR14 Marking U7 U8 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2