TYSEMI BSR14

Transistors
IC
SMD Type
Product specification
BSR13,BSR14
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
Low voltage (max. 40 V).
1
0.55
High current (max. 800 mA).
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
BSR13
BSR14
Unit
Collector-base voltage
VCBO
60
75
V
Collector-emitter voltage
VCEO
30
40
V
Emitter-base voltage
VEBO
5
6
V
Collector current
IC
800
mA
Peak collector current
ICM
800
mA
Peak base current
IBM
200
mA
mW
Total power dissipation
Ptot
250
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
BSR13,BSR14
Electrical Characteristics Ta = 25
Parameter
Symbol
BSR13
ICBO
Collector cutoff current
BSR14
BSR13
Emitter cutoff current
ICBO
IEBO
Max
Unit
IE = 0; VCB = 50 V
Testconditons
Min
Typ
30
nA
IE = 0; VCB = 50 V; Tj = 150
10
ìA
IE = 0; VCB = 60 V
10
nA
IE = 0; VCB = 60 V; Tj = 150
10
ìA
30
nA
10
nA
IC = 0; VEB = 5 V
BSR14
DC current gain *
hFE
BSR13
DC current gain *
hFE
IC = 0.1 mA; VCE = 10 V;
35
IC = 1 mA; VCE = 10 V;
50
IC = 10 mA; VCE = 10 V;
75
IC = 150 mA; VCE = 10 V
100
IC = 150 mA; VCE = 1 V;
50
30
IC = 500 mA; VCE = 10 V;
BSR14
collector-emitter saturation voltage
BSR13
300
40
VCEsat
IC = 150 mA; IB = 15 mA
BSR14
collector-emitter saturation voltage
BSR13
VCEsat
IC = 500 mA; IB = 50 mA
BSR14
BSR13
base-emitter saturation voltage
VBEsat
IC = 150 mA; IB = 15 mA
BSR14
BSR13
base-emitter saturation voltage
0.6
VBEsat
IC = 500 mA; IB = 50 mA
BSR14
Collector capacitance
BSR13
Transition frequency
Cc
IE = Ie = 0; VCB = 10 V; f = 1 MHz
fT
IC = 20 mA; VCE = 20 V;f = 100 MHz
BSR14
400
mV
300
mV
1.6
V
1
V
1.3
V
1.2
V
2.6
V
2
V
8
pF
250
MHz
300
MHz
Turn-on time
ton
35
ns
Delay time
td
15
ns
Rise time
tr
20
ns
Turn-off time
toff
250
ns
Storage time
ts
200
ns
Fall time
tf
60
ns
* Pulse test: tp
300 ìs; d
ICon = 150 mA; IBon = 15 mA;
IBoff = -15 mA
0.02.
hFE Classification
TYPE
BSR13
BSR14
Marking
U7
U8
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2