Transistors IC SMD Type PNP Switching Transistor BSR18A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 1 0.55 Low voltage (max. 40 V). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -6 V Collector current (DC) IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -100 mA mW Total power dissipation Ptot 250 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Tamb -65 to +150 Rth(j-a) 500 Operating ambient temperature Thermal resistance from junction to ambient * K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BSR18A Electrical Characteristics Ta = 25 Parameter Max Unit Collector cutoff current Symbol ICBO IE = 0 A; VCB = -30 V -50 nA Emitter cutoff current IEBO IC = 0 A; VEB = -6 V -50 nA DC current gain * hFE Collector-emitter saturation voltage * Base-emitter saturation voltage * VCEsat VBEsat Testconditons Min VCE = -1 V;IC = -0.1 mA 60 VCE = -1 V;IC = -1 mA 80 VCE = -1 V; IC = -10 mA 100 VCE = -1 V;IC = -50 mA 60 VCE = -1 V;IC = -100 mA 30 Typ 300 IC = -10 mA; IB = -1 mA -200 mV IC = -50 mA; IB = -5 mA -200 mV -850 mV IC = -50 mA; IB = -5 mA -950 mV IC = -10 mA; IB = -1 mA -650 Collector capacitance Cc IE = ie = 0 A; VCB = -5 V; f = 1 MHz 4.5 pF Emitter capacitance Ce IC = ic = 0 A; VEB = -500 mV; f = 1 MHz 10 pF Transition frequency fT Noise figure NF Turn-on time ton Delay time IC = -10 mA; VCE = -20 V; f = 100 MHz IC = -100 ìA; VCE = -5 V; RS = 1 kÙ;f = 10 Hz to 15.7 kHz ICon = -10 mA; IBon = -1 mA; IBoff = 1 mA 250 MHz 4 dB 65 ns td 35 ns Rise time tr 35 ns Turn-off time toff 300 ns Storage time ts 225 ns Fall time tf 75 ns * Pulse test: tp 300 ìs; d Marking Marking 2 unless otherwise specified. T92 www.kexin.com.cn 0.02.