SMD Type Product specification BCF29,BCF30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low voltage (max. 32 V). 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -32 V Collector-emitter voltage VCEO -32 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -100 mA Total power dissipation * Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification BCF29,BCF30 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current BCF29 DC current gain Testconditons Min DC current gain nA IE = 0; VCB = -32 V; Tj = 100 -10 ìA IEBO IC = 0; VEB = -5 V -100 nA hFE IC = -10 ìA; VCE = -5 V 90 150 hFE VBE(sat) IC = -2 mA; VCE = -5 V 120 260 215 500 IC = -10 mA; IB = -0.5 mA -80 IC = -50 mV; IB = -2.5 mA -150 mV IC = -10 mA; IB = -0.5 mA -720 mV IC = -50 mA; IB = -2.5 mA -810 mV Base to emitter voltage VBE IC = -2 mA; VCE = -5 V Collector capacitance CC IE = ie = 0; VCB = -10 V; f = 1 MHz Transition frequency fT IC = -10 mA; VCE = -5 V; f = 100 MHz NF IC = -200 ìA; VCE = -5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz Noise figure -100 ICBO VCE(sat) Base to emitter saturation voltage Unit IE = 0; VCB = -32 V BCF30 Collector-emitter saturation voltage Max ICBO BCF30 BCF29 Typ -600 -300 -750 4.5 mV mV pF 100 MHz 1 4 dB hFE Classification TYPE BCF29 BCF30 Marking C7p C8p http://www.twtysemi.com [email protected] 4008-318-123 2 of 2