Product specification MMBTA93 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 PNP Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCEO -200 V Collector-base voltage VCBO -200 V Emitter-base voltage VEBO -5 V IC -500 mA PD 225 mW Collector current-continuous Total device dissipation FR-5 board *1 @TA = 25 1.8 Derate above 25 Thermal resistance, junction-to-ambient RèJA 556 PD 300 mW/ /W Total device dissipation alumina substrate *2 @TA = 25 2.4 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature RèJA 417 TJ, Tstg -55 to +150 mW mW/ /W * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification MMBTA93 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage * V(BR)CEO IC = -1.0 mA, IB = 0 -200 V Collector-base breakdown voltage V(BR)CBO IC = -100 ìA, IE = 0 -200 V Emitter-base breakdown voltage V(BR)EBO IE = -100 ìA, IC = 0 -5 V Collector cutoff current ICBO VCB = -160 V, IE = 0 -0.25 ìA Emitter cutoff current IEBO VEB = -3.0 V, IC = 0 -0.1 ìA -0.5 V hFE DC current gain * IC = -1.0 mA, VCE = -10 V 25 IC = -10 mA, VCE = -10 V 40 IC = -30 mA, VCE = -10 V 25 Collector-emitter saturation voltage * VCE(sat) IC = -20 mA, IB = -2.0 mA Base-emitter saturation voltage * VBE(sat) IC = -20 mA, IB = -2.0 mA Current-gain - bandwidth product Collector-base capacitance fT Ccb -0.9 IC = -10 mA, VCE = -20 V, f = 100 MHz 50 VCB = -20 V, IE = 0, f = 1.0 MHz V MHz 8 pF 300 ìs, Duty Cycle 2.0%. * Pulse Test: Pulse Width Marking Marking 2E http://www.twtysemi.com [email protected] 4008-318-123 2 of 2