TYSEMI MMBTA93

Product specification
MMBTA93
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
PNP Silicon
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-emitter voltage
Parameter
VCEO
-200
V
Collector-base voltage
VCBO
-200
V
Emitter-base voltage
VEBO
-5
V
IC
-500
mA
PD
225
mW
Collector current-continuous
Total device dissipation FR-5 board *1
@TA = 25
1.8
Derate above 25
Thermal resistance, junction-to-ambient
RèJA
556
PD
300
mW/
/W
Total device dissipation alumina substrate *2
@TA = 25
2.4
derate above 25
Thermal resistance, junction-to-ambient
Junction and storage temperature
RèJA
417
TJ, Tstg
-55 to +150
mW
mW/
/W
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
http://www.twtysemi.com
[email protected]
4008-318-123
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Product specification
MMBTA93
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter breakdown voltage *
V(BR)CEO IC = -1.0 mA, IB = 0
-200
V
Collector-base breakdown voltage
V(BR)CBO IC = -100 ìA, IE = 0
-200
V
Emitter-base breakdown voltage
V(BR)EBO IE = -100 ìA, IC = 0
-5
V
Collector cutoff current
ICBO
VCB = -160 V, IE = 0
-0.25
ìA
Emitter cutoff current
IEBO
VEB = -3.0 V, IC = 0
-0.1
ìA
-0.5
V
hFE
DC current gain *
IC = -1.0 mA, VCE = -10 V
25
IC = -10 mA, VCE = -10 V
40
IC = -30 mA, VCE = -10 V
25
Collector-emitter saturation voltage *
VCE(sat) IC = -20 mA, IB = -2.0 mA
Base-emitter saturation voltage *
VBE(sat) IC = -20 mA, IB = -2.0 mA
Current-gain - bandwidth product
Collector-base capacitance
fT
Ccb
-0.9
IC = -10 mA, VCE = -20 V, f = 100 MHz
50
VCB = -20 V, IE = 0, f = 1.0 MHz
V
MHz
8
pF
300 ìs, Duty Cycle 2.0%.
* Pulse Test: Pulse Width
Marking
Marking
2E
http://www.twtysemi.com
[email protected]
4008-318-123
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