Product specification MMBTA20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 General Purpose Amplifier. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCEO 40 V Emitter-base voltage VEBO 4 V Collector current IC 100 mA Total Device Dissipation FR-5 Board (* 1) @TA = 25 Derate above 25 PD 225 1.8 mW mW/ RèJA 556 /W 300 2.4 mW mW/ 417 /W Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (* 2) @TA = 25 Derate above 25 PD Thermal Resistance, Junction-to-Ambient RèJA Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage V(BR)CEO IC = 1.0 mA, IB = 0 40 V Emitter-base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 4.0 V Collector cutoff current ICBO VCB = 30 V, IE = 0 DC current gain HFE IC = 5.0 mA, VCE = 10 V Collector-emitter saturation voltage Current-gain-bandwidth product Output capacitance VCE(sat) fT Cobo 100 40 IC = 10 mA, IB = 1.0 mA 0.25 IC = 5.0 mA, VCE = 10 V, f = 100 MHz 125 VCB = 5.0 V, IE = 0, f = 1.0 MHz nA 400 V MHz 4.0 pF Marking Marking 1C http://www.twtysemi.com [email protected] 4008-318-123 1 of 1