TYSEMI MMBTA20

Product specification
MMBTA20
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
0.55
General Purpose Amplifier.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-emitter voltage
Parameter
VCEO
40
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
100
mA
Total Device Dissipation FR-5 Board
(* 1) @TA = 25
Derate above 25
PD
225
1.8
mW
mW/
RèJA
556
/W
300
2.4
mW
mW/
417
/W
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate, (* 2)
@TA = 25
Derate above 25
PD
Thermal Resistance, Junction-to-Ambient
RèJA
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1.0 mA, IB = 0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE = 10 ìA, IC = 0
4.0
V
Collector cutoff current
ICBO
VCB = 30 V, IE = 0
DC current gain
HFE
IC = 5.0 mA, VCE = 10 V
Collector-emitter saturation voltage
Current-gain-bandwidth product
Output capacitance
VCE(sat)
fT
Cobo
100
40
IC = 10 mA, IB = 1.0 mA
0.25
IC = 5.0 mA, VCE = 10 V, f = 100 MHz
125
VCB = 5.0 V, IE = 0, f = 1.0 MHz
nA
400
V
MHz
4.0
pF
Marking
Marking
1C
http://www.twtysemi.com
[email protected]
4008-318-123
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