CHR3693-99F RoHS COMPLIANT 21-26.5GHz Integrated Down converter GaAs Monolithic Microwave IC Description LO The CHR3693-99F is a multifunction chip, which integrates a balanced cold FET mixer, a time two multiplier, and a RF self biased LNA. It is designed for a wide range of applications, typically commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vgx I X2 Q Vdx Vgm Vdl RF Main Features ■ Broadband performance 21-26.5GHz ■ 18dB gain ■ -7dBm input IP3 ■ 18dBc image rejection ■ DC bias: Vd=4.0Volt@Id=160mA ■ Chip size: 2,45 x 2,45 x 0,1mm Main Electrical Characteristics Tamb.= +25°C, Vdx=Vdl = +4.0V, Vgx=-0.9V, Vgm=-0.7V Symbol Parameter Min Typ Max Unit F_RF RF frequency range 21 26.5 GHz F_LO LO frequency range 9 14 GHz F_IF IF frequency range DC 3.5 GHz Gc Conversion gain 11 15 dB ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHR36931192 - 11 Jul 11 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHR3693-99F 21-26.5GHz Integrated Down converter Electrical Characteristics Tamb.= +25°C, Vdx=Vdl = +4.0V, Vgx=-0.9V, Vgm=-0.7V Symbol Parameter Min Typ Max Unit F_RF RF frequency range 21 26.5 GHz F_LO LO frequency range 9 14 GHz F_IF IF frequency range DC 3.5 GHz Gc Conversion gain 11 15 19 dB NF Noise Figure for IF>0.1GHz 3.2 3.7 dB P_LO LO Input power 2 5 dBm Img Sup Image Suppression(2) 15 18 dBc IIP3 Input IP3 -7 dBm LO_RL LO return loss -9.5 -7 dB RF return loss (21 to 24GHz) -9.5 -7 dB RF_RL RF return loss (24 to 26.5GHz) -8 -6 dB (1) Id Bias current (Idl + Idx) 120 160 200 mA (1) Typically, Idl= 90mA, Idx=70mA (2) With external I/Q 90° hybrid coupler These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. A bonding wire of typically 0.1 to 0.15nH will improve the matching at the accesses. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Maximum drain bias voltage 4.5 V Id Maximum drain bias current 230 mA Vg Gate bias voltage -2.0 to +0.4 V (2) P_RF Maximum RF input power 10 dBm (2) P_LO Maximum LO input power 10 dBm Tch Maximum channel temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHR36931192 - 11 Jul 11 2/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHR3693-99F 21-26.5GHz Integrated Down converter Typical on wafer Measurements Tamb=25°C, Vdx=Vdl=4V, Typical Vgx=-0.9V & Vgm=-0.7V Ref. : DSCHR36931192 - 11 Jul 11 3/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHR3693-99F 21-26.5GHz Integrated Down converter Typical on wafer Measurements Tamb=25°C, Vdx=Vdl=4V, Typical Vgx=-0.9V & Vgm=-0.7V Ref. : DSCHR36931192 - 11 Jul 11 4/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHR3693-99F 21-26.5GHz Integrated Down converter Mechanical data Bonding pad positions Chip thickness: 100µm. Chip size: 2450x2450 ±35µm All dimensions are in micrometers Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended. Ref. : DSCHR36931192 - 11 Jul 11 5/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHR3693-99F 21-26.5GHz Integrated Down converter Recommended assembly plan LO IN I OUT 120pF To Vgx DC Gate Supply X2 120pF To Vdx DC Drain Supply Q OUT 120pF To Vgm DC Gate Supply 120pF To Vdl DC Drain Supply RF IN 25µm wedge bonding is preferred Recommended circuit bonding table Label Vgx Vdx Vgm Vdl Type Vg Vd Vg Vd Ref. : DSCHR36931192 - 11 Jul 11 Decoupling 120pF 120pF 120pF 120pF Comment Multiplier gate control Multiplier chain Drain Supply Mixer gate control LNA Drain Supply 6/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHR3693-99F 21-26.5GHz Integrated Down converter Notes Ref. : DSCHR36931192 - 11 Jul 11 7/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHR3693-99F 21-26.5GHz Integrated Down converter Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ordering Information Chip form: CHR3693-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHR36931192 - 11 Jul 11 8/8 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice