CHR2391 RoHS COMPLIANT 12-16GHz Integrated Down Converter GaAs Monolithic Microwave IC Description The CHR2391 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate and air bridges. It is available in chip form. Main Features Broadband performances: 12.0-16.0GHz 15 dB conversion gain 2dB noise figure, for IF>0.1GHz 10dBm LO input power -10dBm RF input power (1dB gain comp.) Low DC power consumption, [email protected] Chip size: 2.49 X 2.13 X 0.10mm dB Typical on wafer measurement: Conversion Gain & Image suppression @ IF=0.9 & 1.5GHz 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 2 LO frequency 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 RF Frequency GHz Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit FRF RF frequency range 12 16 GHz FLO LO frequency range 5.25 7.25 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain 13 +15 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHR23911192 - 11 Jul 11 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12 -16GHz Integrated Down Converter CHR2391 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA Symbol Parameter Min Typ Max Unit FRF RF frequency range 12 16 GHz FLO LO frequency range 5.25 7.25 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain (1) +13 NF Noise Figure, for IF>0.1GHz (1) PLO +15 dB 2 2.5 dB LO Input power +10 +13 dBm Image Suppression 15 dBc Input power at 1dB gain compression -10 dBm Input IP3 2.5 dBm LO VSWR Input LO VSWR (1) 2.0:1 RF VSWR Input RF VSWR (1) 2.0:1 Img Sup P1dB IP3 Id Bias current (2) 100 130 mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances are obtained for Idm=50mA (Id consumption of the X2+buffer; vgb-0.4V) and Idl=50mA(Id consumption for the lna; Vga-0.4V) Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage 4.0 V Id Maximum drain bias current 180 mA Vg Gate bias voltage -2.0 to +0.4 V Vdg Maximum drain to gate voltage ( Vd – Vg) +5 V Pin Maximum RF peak input power overdrive (2) -5 dBm Tch Maximum channel temperature 175 °C Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : : DSCHR23911192 - 11 Jul 11 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 12 -16GHz Integrated Down Converter CHR2391 Typical On-wafer Measurements Bias Conditions: Vdm= Vdl= 3.5 V, Idl= Idm= 50mA( Vga=vgb-0.4V), Vgm= -0.7V, Vgx= -0.6V Conversion gain & Image suppression with a 90° IQ combiner dB 22 IF= 0,9GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 Infradyne Gain I Image Rejection I -10 -12 Image Rejection Q Infradyne Gain Q -14 -16 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 dB RF Frequency GHz 22 IF= 1,5GHz 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 Infradyne Gain I Image Rejection I -10 -12 Image Rejection Q Infradyne Gain Q -14 -16 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 RF Frequency GHz Ref. : : DSCHR23911192 - 11 Jul 11 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 12 -16GHz Integrated Down Converter CHR2391 Gain compression versus RF input power 20 IF=0.9GHz 18 16 14 12 10 8 6 Conversion Gain dB 4 IF Output power dBm 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 RF Input power dBm 20 IF=1.5GHz 18 16 14 12 10 Conversion Gain dB 8 IF Output power dBm 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 RF Input power dBm Ref. : : DSCHR23911192 - 11 Jul 11 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 12 -16GHz Integrated Down Converter CHR2391 Chip Assembly and Mechanical Data To Vg (lna) DC Gate supply To Vg (mixer) DC Gate supply To VdL (lna) +VdM (x +buffer) DC Gate supply To Vg (Buffer) DC Gate supply To Vg (multiplier) DC Gate supply Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad positions Chip thickness: 100µm Unit: µm Tol : + / - 35µm Ref. : : DSCHR23911192 - 11 Jul 11 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 12 -16GHz Integrated Down Converter CHR2391 Ordering Information Chip form : CHR2391-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHR23911192 - 11 Jul 11 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice