WILLAS BC807

WILLAS
BC807-xxLT1
General Purpose Transistors
PNP Silicon
FEATURE
Collector current capability IC = -500 mA.
Collector-emitter voltage VCEO(max) = -45 V.
General purpose switching and amplification.
PNP complement: BC807 Series.
SOT–23
We declare that the material of product compliance with RoHS requirements.
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Device
Marking
BC807-25LT1
BC807-40LT1
3000/Tape&Reel
5B1
3000/Tape&Reel
5C1
3000/Tape&Reel
Pr
el
MAXIMUM RATINGS
5A1
im
ina
BC807-16LT1
Shipping
ry
DEVICE MARKING AND ORDERING INFORMATION
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
–45
V
Collector–Base Voltage
V CBO
–50
V
Emitter–Base Voltage
V
–5.0
V
–500
mAdc
Collector Current — Continuous
EBO
IC
3
COLLECTOR
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
R θJA
417
°C/W
T J , T stg
–55 to +150
°C
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient
R θJA
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
PD
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-
WILLAS ELECTRONIC CORP.
WILLAS
BC807-xxLT1
General Purpose Transistors
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
–45
—
—
V
V(BR)CES
–50
—
—
V
(I E = –1.0 µA)
V(BR)EBO
–5.0
—
—
V
Collector Cutoff Current
I CBO
—
—
–100
nA
—
—
–5.0
µA
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –10 mA)
Collector–Emitter Breakdown Voltage
(V EB = 0, IC = –10 µA)
Emitter–Base Breakdown Voltage
ry
(V CB = –20 V)
(V CB = –20 V, TJ = 150°C)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC= –100 mA, VCE = –1.0 V)
Symbol
Min
Typ
h FE
BC807–16
BC807–25
BC807–40
Pr
el
(IC = –500 mA, VCE = –1.0 V)
im
ina
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
Base–Emitter On Voltage
(IC = –500 mA, VCE= –1.0 V)
100
160
250
40
—
—
—
—
—
250
400
600
—
V
CE(sat)
—
—
–0.7
V
V
BE(on)
—
—
–1.2
V
fT
100
—
—
MHz
C obo
—
10
—
pF
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
2012-
WILLAS ELECTRONIC CORP.
WILLAS
BC807-xxLT1
General Purpose Transistors
ry
.110(2.80)
.063(1.60)
.047(1.20)
.122(3.10)
.106(2.70)
.083(2.10)
.006(0.15)MIN.
SOT-23
im
ina
.008(0.20)
.080(2.04)
.070(1.78)
.003(0.08)
.020(0.50)
.012(0.30)
.055(1.40)
.035(0.89)
Pr
el
.004(0.10)MAX.
Dimensions in inches and (millimeters)
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
2012-
inches
mm
WILLAS ELECTRONIC CORP.