WILLAS BC807-xxLT1 General Purpose Transistors PNP Silicon FEATURE Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: BC807 Series. SOT–23 We declare that the material of product compliance with RoHS requirements. RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Device Marking BC807-25LT1 BC807-40LT1 3000/Tape&Reel 5B1 3000/Tape&Reel 5C1 3000/Tape&Reel Pr el MAXIMUM RATINGS 5A1 im ina BC807-16LT1 Shipping ry DEVICE MARKING AND ORDERING INFORMATION Rating Symbol Value Unit Collector–Emitter Voltage V CEO –45 V Collector–Base Voltage V CBO –50 V Emitter–Base Voltage V –5.0 V –500 mAdc Collector Current — Continuous EBO IC 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C R θJA 417 °C/W T J , T stg –55 to +150 °C Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient R θJA Total Device Dissipation Alumina Substrate, (2) TA = 25°C PD Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012- WILLAS ELECTRONIC CORP. WILLAS BC807-xxLT1 General Purpose Transistors ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)CEO –45 — — V V(BR)CES –50 — — V (I E = –1.0 µA) V(BR)EBO –5.0 — — V Collector Cutoff Current I CBO — — –100 nA — — –5.0 µA Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –10 mA) Collector–Emitter Breakdown Voltage (V EB = 0, IC = –10 µA) Emitter–Base Breakdown Voltage ry (V CB = –20 V) (V CB = –20 V, TJ = 150°C) Characteristic ON CHARACTERISTICS DC Current Gain (IC= –100 mA, VCE = –1.0 V) Symbol Min Typ h FE BC807–16 BC807–25 BC807–40 Pr el (IC = –500 mA, VCE = –1.0 V) im ina ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Collector–Emitter Saturation Voltage (IC = –500 mA, IB = –50 mA) Base–Emitter On Voltage (IC = –500 mA, VCE= –1.0 V) 100 160 250 40 — — — — — 250 400 600 — V CE(sat) — — –0.7 V V BE(on) — — –1.2 V fT 100 — — MHz C obo — 10 — pF SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) 2012- WILLAS ELECTRONIC CORP. WILLAS BC807-xxLT1 General Purpose Transistors ry .110(2.80) .063(1.60) .047(1.20) .122(3.10) .106(2.70) .083(2.10) .006(0.15)MIN. SOT-23 im ina .008(0.20) .080(2.04) .070(1.78) .003(0.08) .020(0.50) .012(0.30) .055(1.40) .035(0.89) Pr el .004(0.10)MAX. Dimensions in inches and (millimeters) 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012- inches mm WILLAS ELECTRONIC CORP.