WILLAS FM120-M+ DTA124ECA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Features • Low profile surface mounted application in order to • SOD-123H DTA124ECA optimize boardis space. Pb-Free package available • Low power loss, high efficiency. RoHS product for packing code suffix ”G” • High current capability, low forward voltage drop. Halogen free product for packing code suffix “H” surge capability. • High Guardring protection. Epoxy• meets UL for 94overvoltage V-0 flammability rating high-speed switching. • Ultra Moisure Sensitivity Level 1 Silicon epitaxialenable planar chip, metal silicon junction. Built-in• bias resistors the configuration of an inverter circuit parts meet environmental standards of without• Lead-free connecting external input resistors /228of thin-film resistors with complete • The biasMIL-STD-19500 resistors consist product for packing code suffix "G" • RoHS isolation to allow negative biasing of the input. They also have the Halogen free product for packing code suffixparasitic "H" advantage of almost completely eliminating effects. Mechanical data • Only the on/off conditions need to be set for operation, making device•design Epoxy : easy UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , Absolute•maximum ratings @ 25к Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. .122(3.10) .106(2.70) .063(1.60) .047(1.20) • • • 0.146(3.7) 0.130(3.3) SOT-23 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) .080(2.04) .070(1.78) 0.031(0.8) Typ. .006(0.15)MIN. 0.031(0.8) Typ. .110(2.80) Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Symbol Parameter Min Typ Marking Code -0.5 --VI(off) Input voltage (VCC=-5V, IO=-100A) Recurrent Peak ---VRRM --VMaximum (VOReverse =-0.2V, Voltage IO=-5mA) I(on) VMaximum Output voltage = (IO/II -10mA/-0.5mA ---VRMS --RMS Voltage O(on) II = Input current Voltage (VI -5V) ----Maximum DC Blocking VDC IO(off) Output current (VCC= =-50V, VI 0) ----Maximum Average Forward GI DC current gain (VRectified = IOCurrent -5mA) 56 IO --O=-5V, R1 Input resistance 15.4 22 Peak Forward Surge Current 8.3 ms single half sine-wave R2/R1 Resistance ratio 0.8IFSM 1.0 superimposed on ratedfrequency load (JEDEC method) Transition fT --250 (VO =-10V, IO=5mA, f=100MHz) Typical Thermal Resistance (Note 2) RΘJA CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range .008(0.20) FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH .003(0.08) Max 12 --20 -3.0 Unit 13 V 30 V 14 -0.3 21 V 20-0.36 30mA A -0.5 --28.6 K¡ 1.2 --- MHz 14 40 28 40 15 50 16 60 18 80 10 100 115 150 120 200 35 42 .004(0.10)MAX. 50 60 56 70 105 140 80 100 150 200 1.0 .020(0.50) 30 .012(0.30) .055(1.40) .035(0.89) Electrical Characteristics @ 25к RATINGS .083(2.10) Symbol Parameter Min Typ Max Unit Method 2026 VCC Supply voltage ---50 --V Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band VIN Input voltage -40 --10 V Mounting Position : Any • Output -30 IO current ----mA IC(MAX) -100 • Weight : Approximated 0.011 gram Pd Power dissipation --200 --mW Tj Junction temperature --150 --ć ELECTRICAL Tstg StorageMAXIMUM temperature RATINGS AND -55 --150CHARACTERISTICS ć Ratings at 25℃ ambient temperature unless otherwise specified. 40 Dimensions in inches and (millimeters) 120 -55 to +150 -55 to +125 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC 0.50 0.70 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage *Marking: 15IR Suggested Solder 0.85 Pad Layout 0.5 0.9 0.92 .031 10 .800 @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .035 .900 .079 2.000 2- Thermal Resistance From Junction to Ambient inches mm .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA124ECATHRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.