1N4148 Switching Diode DO-35 Features *Fast switching speed *General purpose rectification *Sillicon epitaxial planar construction Mechanical Data *Cases:DO-35 *Lead:Solderable per MIL- STD-202, Method 208 *Polarity:Cathode band 25.4 4.0 25.4 *Marking:Type number 0.51 *Weight:0.13 grams (approx.) 2.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Rating at 25 C ambient temperature unless otherwise specified. Maximun Ratings Type Number Symbol Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Block Voltage RMS Reverse Voltage Average Rectifier Output Current Non-Repetitive Peak Forward Surge Current @t=10ms o Power Dissipation (Note 1)at Tamb=25 C Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Range Electrical Characteristics Type Number Forward Voltage Peak Reverse Current @IF=10mA VR=75V o VR=70V,Tj=150oC VR=20V,Tj=150 C VR=20V Capacitance VR=0,f=1.0MHz Reverse Recovery Time (Note 1) 1N4148 VRM Units 100 V VRRM VRWM VR VR(RMS) IO 75 V 53 150 V mA IFSM 500 mA Pd R*JA TJ,TSTG 500 350 -65 to +175 mW K/W 0 C Min Max Units VF - 1.0 V IR - Cj - 5.0 50 30 25 4.0 4.0 uA uA uA nA pF nS Symbol trr NOTES: 1. Reverse Recovery Test Conditions:IF=10mA to IR=1.0mA VR=6.0V,RLl=100* RATING AND CHARACTERISTIC CURVES 1N4148 FIG.1-FORWARD CHARACTERISTICS CURVE FIG.1-FORWARD CHARACTERISTICS CURVE 1000 Ir,INSTANTANEOUS FORWARD CURRENT.(mA) Ir,INSTANTANEOUS FORWARD CURRENT.(mA) 1000 100 10 1.0 0.1 1000 100 10 VR=20V 1 0 0.01 0 1 2 VF,INSTANTANEOUS FORWARD VOLTAGE.(V) mW 1000 FIG.3-ADMISSIBLE POWER DISSIPATION VS AMBIENT TEMPERATURE 90 80 700 Ptot 600 500 400 300 200 100 0 0 0 100 200 C Tamb 100 200 0 Tj,JUNCTION TEMPERATURE( C)