YANGJIE 1N4148

1N4148
Switching Diode
DO-35
Features
*Fast switching speed
*General purpose rectification
*Sillicon epitaxial planar construction
Mechanical Data
*Cases:DO-35
*Lead:Solderable per MIL- STD-202,
Method 208
*Polarity:Cathode band
25.4
4.0
25.4
*Marking:Type number
0.51
*Weight:0.13 grams (approx.)
2.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25 C ambient temperature unless otherwise specified.
Maximun Ratings
Type Number
Symbol
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Block Voltage
RMS Reverse Voltage
Average Rectifier Output Current
Non-Repetitive Peak Forward Surge Current
@t=10ms
o
Power Dissipation (Note 1)at Tamb=25 C
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Electrical Characteristics
Type Number
Forward Voltage
Peak Reverse Current
@IF=10mA
VR=75V
o
VR=70V,Tj=150oC
VR=20V,Tj=150 C
VR=20V
Capacitance VR=0,f=1.0MHz
Reverse Recovery Time (Note 1)
1N4148
VRM
Units
100
V
VRRM
VRWM
VR
VR(RMS)
IO
75
V
53
150
V
mA
IFSM
500
mA
Pd
R*JA
TJ,TSTG
500
350
-65 to +175
mW
K/W
0
C
Min
Max
Units
VF
-
1.0
V
IR
-
Cj
-
5.0
50
30
25
4.0
4.0
uA
uA
uA
nA
pF
nS
Symbol
trr
NOTES: 1. Reverse Recovery Test Conditions:IF=10mA to IR=1.0mA VR=6.0V,RLl=100*
RATING AND CHARACTERISTIC CURVES
1N4148
FIG.1-FORWARD CHARACTERISTICS CURVE
FIG.1-FORWARD CHARACTERISTICS CURVE
1000
Ir,INSTANTANEOUS FORWARD CURRENT.(mA)
Ir,INSTANTANEOUS FORWARD CURRENT.(mA)
1000
100
10
1.0
0.1
1000
100
10
VR=20V
1
0
0.01
0
1
2
VF,INSTANTANEOUS FORWARD VOLTAGE.(V)
mW
1000
FIG.3-ADMISSIBLE POWER DISSIPATION VS
AMBIENT TEMPERATURE
90
80
700
Ptot
600
500
400
300
200
100
0
0
0
100
200 C
Tamb
100
200
0
Tj,JUNCTION TEMPERATURE( C)