ETC CR08AS-8

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
CR08AS
Dimensions
in mm
4.4±0.1
1.6±0.2
➂
2.5±0.1
➁
3.9±0.3
0.8 MIN
➀
1.5±0.1
0.5±0.07
0.4 +0.03
–0.05
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
➁
➀
• IT (AV) ........................................................................ 0.8A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
➀ CATHODE
➁ ANODE
➂ GATE
➂
SOT-89
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
8 (marked “AD”)
12 (marked “AF”)
Unit
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
720
V
VR (DC)
DC reverse voltage
320
480
V
VDRM
Repetitive peak off-state voltage
✽1
400
600
V
VD (DC)
DC off-state voltage
✽1
320
480
V
Symbol
Conditions
Parameter
IT (RMS)
RMS on-state current
IT (AV)
Average on-state current
Commercial frequency, sine half wave, 180° conduction, Ta=51°C✽2
ITSM
Surge on-state current
60Hz sine half wave 1 full cycle, peak value, non-repetitive
I 2t
I2t
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
PG (AV)
VFGM
Ratings
Unit
1.26
A
0.8
A
10
A
0.42
A2s
Peak gate power dissipation
0.5
W
Average gate power dissipation
0.1
W
Peak gate forward voltage
6
V
VRGM
Peak gate reverse voltage
6
V
IFGM
Peak gate forward current
0.3
Tj
Junction temperature
for fusing
–40 ~ +125
–40 ~ +125
Storage temperature
Tstg
—
Weight
Typical value
48
A
°C
°C
mg
✽1. With Gate-to-cathode resistance RGK =1kΩ
Jan.2000
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limits
Test conditions
Min.
Typ.
Max.
Unit
IRRM
Repetitive peak reverse current
Tj=125°C, V RRM applied, RGK=1kΩ
—
—
0.5
mA
IDRM
Repetitive peak off-state current
Tj=125°C, V DRM applied, RGK=1kΩ
—
—
0.5
mA
VTM
On-state voltage
Ta=25°C, I TM=2.5A, instantaneous value
—
—
1.5
V
VGT
Gate trigger voltage
Ta=25°C, V D =6V, IT =0.1A ✽4
—
—
0.8
V
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM, RGK=1kΩ
0.2
—
—
IGT
Gate trigger current
Tj=25°C, VD =6V, IT=0.1A ✽4
1
—
IH
Holding current
Tj=25°C, VD=12V, RGK=1kΩ
—
1.5
3
mA
R th (j-a)
Thermal resistance
Junction to ambient ✽2
—
—
65
°C/W
100 ✽3
V
µA
✽2. Soldering with ceramic plate (25mm × 25mm × t0.7).
✽3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
A
B
C
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
✽4. IGT, VGT measurement circuit.
A1
3V
DC
IGS
IGT
A3
A2
60Ω
TUT
6V
DC
V1
RGK
1 2
VGT
1kΩ
SWITCH
SWITCH 1 : IGT measurement
SWITCH 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
MAXIMUM ON-STATE CHARACTERISTICS
102
7 Ta = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
1
2
3
4
ON-STATE VOLTAGE (V)
5
RATED SURGE ON-STATE CURRENT
10
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
PERFORMANCE CURVES
9
8
7
6
5
4
3
2
1
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Jan.2000
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
102
GATE VOLTAGE (V)
7
5
3
2
VFGM = 6V
101
7
5
3
2
PGM = 0.5W
PG(AV) = 0.1W
VGT = 0.8V
100
7
5
3
2
IGT = 100µA
(Tj = 25°C)
10–1
7
5
3
2
VGD = 0.2V
IFGM = 0.3A
10–2
10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
100 (%)
GATE CHARACTERISTICS
103
7 TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140 160
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
0.9
DISTRIBUTION
0.8
TYPICAL EXAMPLE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
AVERAGE POWER DISSIPATION (W)
0
–40 –20
0
20
40
60
80 100 120
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7 25 25 t0.7
5 ALUMINUM BOARD
3 WITH SOLDERING
2
102
7
5
3
2
101
7
5
3
2
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
JUNCTION TEMPERATURE (°C)
TIME (s)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
1.6
θ = 30° 60° 90° 120°
1.4
180°
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
θ
WITH SOLDERING
360°
120
1.2
1.0
0.8
0.6
0.4
θ
0.2
360°
0
0
RESISTIVE, INDUCTIVE LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
GATE TRIGGER VOLTAGE (V)
1.0
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
100
80
60
θ = 30°
40
60° 120°
20
0
90° 180°
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
Jan.2000
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR08AS
LOW POWER USE
100
80
65°C/W
60
90°C/W
40
20
Rth(j – a) = 200°C/W
0
AMBIENT TEMPERATURE (°C)
360°
NATURAL
CONVECTION
θ = 180°
120
0
AVERAGE POWER DISSIPATION (W)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
RESISTIVE,
INDUCTIVE
140
θ
LOADS
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
1.6
θ = 30° 60° 90° 120°
1.4
180°
1.2
1.0
0.8
0.6
0.4
θ
0.2
360°
0
RESISTIVE LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
θ θ
WITH SOLDERING
360°
120
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
1.6
90° 180°
θ = 30° 60° 120° 270°
1.4
DC
RESISTIVE LOADS
NATURAL
CONVECTION
100
80
60
40
60°
120°
θ = 30°
90°
180°
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1.2
1.0
0.8
0.6
0
θ = 30° 60° 120° 270°
20
0
90°
0
180°
DC
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
0
RESISTIVE,
INDUCTIVE
LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
40
360°
0.2
160
BREAKOVER VOLTAGE (T j = t°C)
BREAKOVER VOLTAGE (T j = 25°C )
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
θ
WITH SOLDERING
360°
120
RESISTIVE,
100
INDUCTIVE
LOADS
80
NATURAL
CONVECTION
60
θ
0.4
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
0
θ
AVERAGE ON-STATE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
AMBIENT TEMPERATURE (°C)
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
120
TYPICAL EXAMPLE
140
100
RGK = 1kΩ
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Jan.2000
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR08AS
LOW POWER USE
TYPICAL EXAMPLE
80
60
40
20
Tj = 125°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
120
100
80
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
101
7 DISTRIBUTION
TYPICAL EXAMPLE
5
IGT (25°C) = 35µA
3
2
100
7
5
3
2
10–1
7
5
3
2
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
RGK = 1kΩ
10–2
–60 –40 –20 0 20 40 60 80 100 120 140
4.0
Tj = 25°C
3.5
TURN-ON TIME (µs)
3.0
2.5
2.0
1.5
1.0
0.5
101
GATE TRIGGER CURRENT (µA)
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
# 1 25µA
0.9mA
300
200
#1
100
Tj = 25°C
0
–1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
0
100
500
400
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT (mA)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
Tj = 125°C
RGK = 1kΩ
140
GATE TO CATHODE RESISTANCE (kΩ)
100 (%)
HOLDING CURRENT (mA)
BREAKOVER VOLTAGE (RGK = rk Ω)
BREAKOVER VOLTAGE (RGK = 1kΩ)
100
BREAKOVER VOLTAGE (dv/dt = vV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
HOLDING CURRENT (RGK = rk Ω)
HOLDING CURRENT (RGK = 1kΩ)
100 (%)
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
100 (%)
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
102
TURN-ON TIME VS. GATE CURRENT
102
VD = 100V
7 TYPICAL EXAMPLE
5
RL = 47Ω
3
RGK = 1kΩ
2
Ta = 25°C
101
7
5
3
2
100
7
5
3
2
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE CURRENT (mA)
Jan.2000
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR08AS
LOW POWER USE
40
TURN-OFF TIME (µs)
VD = 50V, VR = 50V
35 IT = 2A, RGK = 1kΩ
30
TYPICAL EXAMPLE
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
25 DISTRIBUTION
20
15
10
5
0
0
20
40
60
80 100 120 140 160
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C)
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
100 (%)
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
104
7
5
3
2
Tj = 25°C
TYPICAL EXAMPLE
IGT (DC)
# 1 10µA
#1
# 2 65µA
#2
103
7
5
3
2
102
7
5
3
2
101
100
2
3 4 5 7 101
2
3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
THERMAL IMPEDANCE VS.
BOARD DIMENSIONS
320
THERMAL IMPEDANCE (°C/W)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
100 (%)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
280
240
200
WITHOUT EPOXY PLATE
160
120
80
t0.7
40 10×10 EPOXY PLATE ALUMINUM
WITH COPPER FOIL BOARD
0
0 10 20 30 40 50 60 70 80
BOARD DIMENSIONS (mm)
REGULAR SQUARE ONE SIDE
Jan.2000