MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING CR3PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME φ3.2±0.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 123 IT (AV) ........................................................................... 3A VDRM ..............................................................400V/600V IGT ......................................................................... 100µA Viso ........................................................................ 1500V UL Recognized: File No. E80276 0.5 2.6 ∗ Measurement point of case temperature 4.5 • • • • • 2.54 2 1 CATHODE 2 ANODE 3 GATE 3 1 TO-220F APPLICATION TV sets, control of household equipment such as electric blankets, other general purpose control applications MAXIMUM RATINGS (Ta=25°C, unless otherwise noted) Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage ✽1 400 600 V VD (DC) DC off-state voltage ✽1 320 480 V Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Tc =103°C ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM PG (AV) VFGM Ratings Unit 4.7 A 3.0 A 70 A 24.5 A2s Peak gate power dissipation 0.5 W Average gate power dissipation 0.1 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 0.3 Tj Junction temperature Storage temperature Tstg — Viso for fusing Weight Typical value Isolation voltage Ta=25°C, AC 1 minute, each terminal to case A –40 ~ +125 °C –40 ~ +125 °C 2.0 g 1500 V ✽1. With gate to cathode resistance RGK=220Ω. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied, RGK=220Ω — — 2.0 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied, RGK=220Ω — — 2.0 mA VTM On-state voltage Tc=25°C, ITM =10A, instantaneous value — — 1.6 V VGT Gate trigger voltage Tj=25°C, VD=6V, IT=0.1A — — 0.8 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM, RGK=220Ω 0.1 — — IGT Gate trigger current Tj=25°C, VD=6V, IT=0.1A 1 — 100 ✽3 R th (j-c) Thermal resistance Junction to case ✽2 — — 4.1 V µA °C/ W ✽2. The contact thermal resistance R th (c-f) is 0.5°C/W with greased. ✽3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item A B C IGT (µA) 1 ~ 30 20 ~ 50 40 ~ 100 The above values do not include the current flowing through the 220Ω resistance between the gate and cathode. MAXIMUM ON-STATE CHARACTERISTICS 102 7 Tc = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 100 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 102 7 5 3 2 VFGM = 6V 101 7 5 3 2 PGM = 0.5W PG(AV) = 0.1W VGT = 0.8V 100 7 5 3 2 IGT = 200µA (Tj = 25°C) IFGM = 0.3A 10–1 7 VGD = 0.1V 5 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) GATE CHARACTERISTICS 103 7 5 3 2 #2 #1 102 7 5 3 2 101 7 5 3 2 100 –40 –20 GATE CURRENT (mA) DISTRIBUTION TYPICAL EXAMPLE 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 20 40 60 80 100 120 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (V) ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, 0 –40 –20 2 1 2.0 3.0 4.0 80 100 120 101 7 5 3 2 100 7 5 3 2 10–1 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 5.0 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) 3 1.0 60 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 8 RESISTIVE, INDUCTIVE 7 θ LOADS 180° 360° 6 120° 90° 5 60° θ = 30° 4 0 40 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 JUNCTION TEMPERATURE (°C) 0 20 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 1.0 0.8 0 JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 0.9 TYPICAL EXAMPLE IGT (25°C) # 1 45µA # 2 18µA 140 θ 120 360° RESISTIVE, INDUCTIVE LOADS 100 80 θ = 30° 60 90° 60° 180° 120° 40 20 0 0 1.0 2.0 3.0 4.0 5.0 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3PM LOW POWER USE ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 NATURAL CONVECTION 140 θ WITHOUT FIN 360° 120 RESISTIVE, θ = 180° 120° INDUCTIVE 90° LOADS 60° 30° 100 80 60 40 20 0 0 AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) INSULATED TYPE, GLASS PASSIVATION TYPE 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 8 7 θ 6 360° 4 3 2 1 0 AMBIENT TEMPERATURE (°C) 80 θ = 30° 60° 90° 120° 180° 60 40 θ θ 360° 20 RESISTIVE LOADS 0 0 1.0 2.0 3.0 4.0 2.0 3.0 4.0 5.0 θ = 180° RESISTIVE 120° LOADS 90° 60° 30° 100 80 60 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 160 140 1.0 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 NATURAL CONVECTION 140 θ θ WITHOUT FIN 360° 120 0 5.0 TYPICAL EXAMPLE RGK = 220Ω 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) HOLDING CURRENT (mA) CASE TEMPERATURE (°C) 100 (%) BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) 100 0 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 120 180° 120° 90° RESISTIVE 60° LOADS θ = 30° 5 AVERAGE ON-STATE CURRENT (A) 140 θ 102 7 5 3 2 VD = 12V RGK = 1kΩ ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 101 7 5 3 2 DISTRIBUTION TYPICAL EXAMPLE 100 7 5 3 2 10–1 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 400 350 #1 300 TYPICAL EXAMPLE IGT (25°C) # 1 25µA # 2 50µA 250 #2 200 150 100 TURN-ON TIME VS. GATE CURRENT TURN-ON TIME (µs) HOLDING CURRENT (RGK = rkΩ) HOLDING CURRENT (RGK = 1kΩ) 100 (%) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 50 100 7 5 4 3 2 10–1 0 10 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 VD = 100V Ta = 25°C TYPICAL EXAMPLE IGT (25°C) # 33µA # 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT (mA) TURN-OFF TIME VS. JUNCTION TEMPERATURE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 50 40 30 TYPICAL EXAMPLE DISTRIBUTION 20 10 0 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) ,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,, ,,,,,,,,, IT = 2A 70 VD = 50V, VR = 50V dv/dt = 5V/µs 60 100 (%) GATE TO CATHODE RESISTANCE (kΩ) 80 TURN-OFF TIME (µs) 101 7 5 4 3 2 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 tw 0.1s 103 7 5 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT PULSE WIDTH (µs) Feb.1999