To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE OUTLINE DRAWING CR04AM Dimensions in mm φ5.0 MAX VOLTAGE CLASS TYPE NAME 2 1 12.5 MIN 3 5.0 MAX 4.4 1 CATHODE 2 ANODE 3 GATE CIRCUMSCRIBE CIRCLE φ0.7 3.9 MAX 1.3 1.25 1.25 3 2 1 • IT (AV) ........................................................................ 0.4A • VDRM ..............................................................400V/600V • IGT ......................................................................... 100µA JEDEC : TO-92 APPLICATION Ignitor, solid state relay, strobe flasher, circuit breaker, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage ✽1 400 600 V VD (DC) DC off-state voltage ✽1 320 480 V Ratings Unit 0.63 A 0.4 A 10 A 0.4 A2s Peak gate power dissipation 0.5 W Average gate power dissipation 0.1 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 0.3 Tj Junction temperature Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Ta=54°C ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM PG (AV) VFGM for fusing Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 0.23 g ✽1. With Gate-to-cathode resistance RGK =1kΩ Sep.2000 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 0.5 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied, RGK=1kΩ — — 0.5 mA VTM On-state voltage Ta=25°C, I TM=1.2A, instantaneous value — — 1.2 V VGT Gate trigger voltage Ta=25°C, V D =6V, IT =0.1A ✽3 — — 0.8 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM, RGK=1kΩ 0.2 — — IGT Gate trigger current Tj=25°C, VD =6V, IT=0.1A ✽3 1 — IH Holding current Tj=25°C, VD=12V, RGK=1kΩ — 1.5 3 R th (j-a) Thermal resistance Junction to ambient — — 150 100 ✽2 V µA mA °C/W ✽2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item A B C IGT (µA) 1 ~ 30 20 ~ 50 40 ~ 100 The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. ✽3. IGT, VGT measurement circuit. 60Ω A1 3V DC IGS IGT A3 A2 RGK 1 1kΩ SWITCH 2 TUT 6V DC V1 VGT SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) MAXIMUM ON-STATE CHARACTERISTICS 102 7 Ta = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0 1 2 3 4 ON-STATE VOLTAGE (V) 5 RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Sep.2000 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE CHARACTERISTICS 102 VFGM = 6V PGM = 0.5W 101 7 5 VGT = 0.8V 3 2 (Tj = 25°C) 100 7 5 3 2 PG(AV) = 0.1W IGT = 100µA (Tj = 25°C) IFGM = 0.3V 10–1 7 5 3 2 VGD = 0.2V 10–2 10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) 7 5 3 2 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) GATE TRIGGER VOLTAGE (V) 1.0 0.9 DISTRIBUTION 0.8 TYPICAL EXAMPLE 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.8 60° 120° θ = 30° 90° 0.7 180° 0.6 0.5 0.4 0.3 0.2 θ 0.1 360° 0 0 RESISTIVE, INDUCTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AMBIENT TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) JUNCTION TEMPERATURE (°C) 140 θ 120 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 100 80 60 θ = 30° 40 90° 180° 60° 120° 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AVERAGE ON-STATE CURRENT (A) Sep.2000 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR04AM LOW POWER USE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 0.8 θ = 30° 90° 60° 120° 0.7 180° 0.6 0.5 0.4 0.3 0.2 θ 360° 0.1 0 θ 0 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 AMBIENT TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) GLASS PASSIVATION TYPE RESISTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 140 θ 120 360° 80 60 40 0.3 θ 360° 0.2 0.1 120 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 θ 360° 120 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 100 80 60 40 20 0 θ = 30° 0 60° 120° 270° 90° 180° DC 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE 100 (%) 160 0 0 180° AVERAGE ON-STATE CURRENT (A) TYPICAL EXAMPLE 140 120 TYPICAL EXAMPLE 100 100 80 60 40 20 RGK = 1kΩ 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE (RGK = rk Ω) BREAKOVER VOLTAGE (RGK = 1kΩ) 100 (%) 0 RESISTIVE, INDUCTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ = 30° 60° 90° 120° 20 0 AMBIENT TEMPERATURE (°C) 0.4 BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) AVERAGE POWER DISSIPATION (W) 0.5 RESISTIVE LOADS NATURAL CONVECTION 100 AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.8 90° 180° 0.7 θ = 30° 60° 120° 270° DC 0.6 θ 80 60 40 20 Tj = 125°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) Sep.2000 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR04AM LOW POWER USE 120 100 80 60 40 20 100 7 5 3 2 10–1 7 5 3 2 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE HOLDING CURRENT VS. GATE TRIGGER CURRENT 500 4.0 TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 25µA 0.9mA 300 200 #1 100 Tj = 25°C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0 100 101 GATE TO CATHODE RESISTANCE (kΩ) GATE TRIGGER CURRENT (µA) TURN-ON TIME VS. GATE CURRENT TURN-OFF TIME VS. JUNCTION TEMPERATURE 102 7 TYPICAL EXAMPLE 5 3 2 VD = 100V RL = 47Ω RGK = 1kΩ Ta = 25°C 101 7 5 3 2 100 7 5 3 2 102 40 VD = 50V, VR = 50V IT = 2A, RGK = 1kΩ 35 TURN-OFF TIME (µs) TURN-ON TIME (µs) 101 7 DISTRIBUTION TYPICAL EXAMPLE 5 IGT (25°C) = 35µA 3 2 RGK = 1kΩ 10–2 –60 –40 –20 0 20 40 60 80 100 120 140 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 400 HOLDING CURRENT (RGK = rk Ω) HOLDING CURRENT (RGK = 1kΩ) HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C RGK = 1kΩ 140 HOLDING CURRENT (mA) 100 (%) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 100 (%) GLASS PASSIVATION TYPE 30 TYPICAL EXAMPLE 25 DISTRIBUTION 20 15 10 5 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) 0 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Sep.2000 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR04AM LOW POWER USE 140 120 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 100 (%) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) 100 (%) GLASS PASSIVATION TYPE 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 104 7 5 3 2 103 7 5 3 2 TYPICAL EXAMPLE IGT (DC) # 1 10µA # 2 65µA #1 #2 102 7 5 3 2 Tj = 25°C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Sep.2000