LM613
Dual Operational Amplifiers, Dual Comparators, and
Adjustable Reference
General Description
Features
The LM613 consists of dual op-amps, dual comparators, and
a programmable voltage reference in a 16-pin package. The
op-amps out-performs most single-supply op-amps by providing higher speed and bandwidth along with low supply
current. This device was specifically designed to lower cost
and board space requirements in transducer, test, measurement, and data acquisition systems.
Combining a stable voltage reference with wide output swing
op-amps makes the LM613 ideal for single supply transducers, signal conditioning and bridge driving where large
common-mode-signals are common. The voltage reference
consists of a reliable band-gap design that maintains low dynamic output impedance (1Ω typical), excellent initial tolerance (0.6%), and the ability to be programmed from 1.2V to
6.3V via two external resistors. The voltage reference is very
stable even when driving large capacitive loads, as are commonly encountered in CMOS data acquisition systems.
As a member of National’s Super-Block™ family, the LM613
is a space-saving monolithic alternative to a multi-chip solution, offering a high level of integration without sacrificing
performance.
OP AMP
n Low operating current (Op Amp): 300 µA
n Wide supply voltage range: 4V to 36V
n Wide common-mode range: V− to (V+ − 1.8V)
n Wide differential input voltage: ± 36V
n Available in plastic package rated for Military Temp.
Range Operation
n
n
n
n
REFERENCE
Adjustable output voltage: 1.2V to 6.3V
Tight initial tolerance available: ± 0.6%
Wide operating current range: 17 µA to 20 mA
Tolerant of load capacitance
Applications
n
n
n
n
Transducer bridge driver
Process and mass flow control systems
Power supply voltage monitor
Buffered voltage references for A/D’s
Connection Diagrams
E Package Pinout
DS009226-1
Top View
DS009226-48
Super-Block™ is a trademark of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation
DS009226
www.national.com
LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference
June 1998
Ordering Information
Reference
Tolerance & VOS
± 0.6%
Temperature Range
Military
Industrial
Commercial
−55˚C ≤ TA ≤ +125˚C
−40˚C ≤ TA ≤ +85˚C
0˚C ≤ TA ≤ +70˚C
LM613AMN
LM613AIN
—
80 ppm/˚C Max.
VOS ≤ 3.5 mV
LM613AMJ/883
LM613AME/883
—
—
16-Pin
N16E
LM613MN
16-Pin
—
—
20-Pin
E20A
LCC
LM613IN
150 ppm/˚C Max.
LM613CN
16-Pin
N16E
Molded DIP
—
LM613IWM
16-Pin Wide
Surface Mount
www.national.com
J16A
Ceramic DIP
(Note 14)
VOS ≤ 5.0 mV Max.
NSC
Drawing
Molded DIP
(Note 14)
± 2.0%
Package
2
M16B
Absolute Maximum Ratings (Note 1)
Thermal Resistance,
Junction-to-Ambient (Note 5)
N Package
WM Package
Soldering Information (10 Sec.)
N Package
WM Package
ESD Tolerance (Note 6)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Voltage on Any Pin Except VR
(referred to V−pin)
(Note 2)
(Note 3)
Current through Any Input Pin
& VR Pin
Differential Input Voltage
Military and Industrial
Commercial
Storage Temperature Range
Maximum Junction Temp.(Note 4)
36V (Max)
−0.3V (Min)
100˚C/W
150˚C/W
260˚C
220˚C
± 1 kV
Operating Temperature Range
± 20 mA
LM613AI, LM613BI:
LM613AM, LM613M:
LM613C:
± 36V
± 32V
−65˚C ≤ TJ ≤ +150˚C
150˚C
−40˚C to +85˚C
−55˚C to +125˚C
0˚C ≤ TJ ≤ +70˚C
Electrical Characteristics
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range.
LM613AM
Symbol
Parameter
Conditions
LM613M
Typical
LM613AI
LM613I
(Note 7)
Limits
LM613C
(Note 8)
Limits
Units
(Note 8)
IS
VS
Total Supply Current
RLOAD = ∞,
450
940
1000
µA (Max)
4V ≤ V+ ≤ 36V (32V for LM613C)
550
1000
1070
µA (Max)
2.2
2.8
2.8
V (Min)
2.9
3
3
V (Min)
46
36
32
V (Max)
43
36
32
V (Max)
Supply Voltage Range
OPERATIONAL AMPLIFIERS
VOS1
VOS2
VOS Over Supply
4V ≤ V+ ≤ 36V
1.5
3.5
5.0
mV (Max)
2.0
6.0
7.0
mV (Max)
VOS Over VCM
(4V ≤ V+ ≤ 32V for LM613C)
VCM = 0V through VCM =
1.0
3.5
5.0
mV (Max)
(V+ − 1.8V), V+ = 30V, V− = 0V
1.5
6.0
7.0
mV (Max)
(Note 8)
15
Average VOS Drift
IB
IOS
Input Bias Current
Input Offset Current
µV/˚C
(Max)
10
25
35
11
30
40
nA (Max)
nA (Max)
0.2
4
4
nA (Max)
0.3
5
5
nA (Max)
Average Offset Current
4
pA/˚C
1000
MΩ
6
pF
RIN
Input Resistance
Differential
CIN
Input Capacitance
en
Voltage Noise
Common-Mode
f = 100 Hz, Input Referred
74
In
Current Noise
f = 100 Hz, Input Referred
58
Common-Mode
95
80
75
90
75
70
dB (Min)
Power Supply
V+ = 30V, 0V ≤ VCM ≤ (V+ − 1.8V)
CMRR = 20 log (∆VCM/∆VOS)
4V ≤ V+ ≤ 30V, VCM = V+/2,
110
80
75
dB (Min)
Rejection Ratio
PSRR = 20 log (∆V+/VOS)
100
75
70
dB (Min)
CMRR
Rejection Ratio
PSRR
3
dB (Min)
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Electrical Characteristics
(Continued)
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range.
LM613AM
Symbol
Parameter
Conditions
LM613M
Typical
LM613AI
LM613I
(Note 7)
Limits
LM613C
(Note 8)
Limits
Units
(Note 8)
OPERATIONAL AMPLIFIERS
AV
SR
GBW
VO1
Open Loop
RL = 10 kΩ to GND, V+ = 30V,
500
100
94
V/mV
Voltage Gain
5V ≤ VOUT ≤ 25V
V+ = 30V (Note 9)
50
40
40
(Min)
0.70
0.55
0.50
V/µs
0.65
0.45
0.45
Slew Rate
Gain Bandwidth
Output Voltage
Swing High
VO2
Output Voltage
Swing Low
CL = 50 pF
RL = 10 kΩ to GND,
V+ = 36V (32V for LM613C)
RL = 10 kΩ to V+,
V+ = 36V (32V for LM613C)
0.8
MHz
0.5
MHz
V+ − 1.4
V+ − 1.7
V+ − 1.8
V (Min)
V+ − 1.6
V+ − 1.9
V+ − 1.9
V (Min)
V− + 0.8
V− + 0.9
V− + 0.95
V (Max)
−
−
V + 0.9
V + 1.0
V− + 1.0
V (Max)
20
16
mA (Min)
IOUT
Output Source Current
VOUT = 2.5V, V+IN = 0V,
V−IN = −0.3V
25
15
13
13
mA (Min)
ISINK
Output Sink Current
VOUT = 1.6V, V+IN = 0V,
V−IN = 0.3V
17
14
13
mA (Min)
9
8
8
mA (Min)
ISHORT
Short Circuit Current
VOUT = 0V,V+IN = 3V,
V−IN = 2V
30
50
50
mA (Max)
40
60
60
mA (Max)
VOUT = 5V, V+IN = 2V,
V−IN = 3V
30
60
70
mA (Max)
32
80
90
mA (Max)
4V ≤ V+ ≤ 36V (32V for LM613C),
RL = 15 kΩ
1.0
3.0
5.0
mV (Max)
2.0
6.0
7.0
mV (Max)
Offset Voltage
0V ≤ VCM ≤ 36V
1.0
3.0
5.0
mV (Max)
over VCM
V+ = 36V, (32V for LM613C)
1.5
6.0
7.0
mV (Max)
COMPARATORS
VOS
Offset Voltage
Average Offset
15
µV/˚C
Voltage Drift
IB
Input Bias Current
IOS
Input Offset Current
AV
Voltage Gain
tr
Large Signal
Response Time
ISINK
ILEAK
Output Sink Current
Output Leakage
Current
(Max)
5
25
35
nA (Max)
8
30
40
nA (Max)
0.2
4
4
nA (Max)
0.3
5
5
nA (Max)
RL = 10 kΩ to 36V (32V for
LM613C)
500
V/mV
2V ≤ VOUT ≤ 27V
V+IN = 1.4V, V−IN = TTL Swing,
RL = 5.1 kΩ
100
V/mV
1.5
µs
V+IN = 0V, V−IN = 1V,
VOUT = 1.5V
20
13
VOUT = 0.4V
2.8
2.4
0.1
V+IN = 1V, V−IN = 0V,
VOUT = 36V (32V for LM613C)
2.0
µs
10
10
mA (Min)
8
8
mA (Min)
1.0
0.8
mA (Min)
0.5
0.5
mA (Min)
10
10
µA (Max)
0.2
µA (Max)
VOLTAGE REFERENCE
VR
Voltage Reference
www.national.com
(Note 10)
1.244
4
1.2365
1.2191
V (Min)
Electrical Characteristics
(Continued)
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range.
LM613AM
Symbol
Parameter
Conditions
LM613M
Typical
LM613AI
LM613I
(Note 7)
Limits
LM613C
(Note 8)
Limits
Units
(Note 8)
VOLTAGE REFERENCE
1.2689
( ± 2%)
80
150
Average Temp. Drift
(Note 11)
10
Hysteresis
(Note 12)
3.2
VR Change
VR(100 µA) − VR(17 µA)
0.05
1
1
with Current
R
1.2515
( ± 0.6%)
V (Max)
ppm/˚C
(Max)
µV/˚C
mV (Max)
0.1
1.1
1.1
mV (Max)
VR(10 mA) − VR(100 µA)
1.5
5
5
mV (Max)
(Note 13)
2.0
5.5
5.5
mV (Max)
∆VR(10→0.1 mA)/9.9 mA
0.2
0.56
0.56
Ω (Max)
∆VR(100→17 µA)/83 µA
0.6
13
13
Ω (Max)
VR Change
VR(Vro
2.5
7
7
mV (Max)
with High VRO
(5.06V between Anode and
2.8
10
10
mV (Max)
VR(V+ = 5V) − VR(V+ = 36V)
(V+ = 32V for LM613C)
0.1
1.2
1.2
mV (Max)
0.1
1.3
1.3
mV (Max)
VR(V+
0.01
1
1
mV (Max)
0.01
1.5
1.5
mV (Max)
22
35
50
nA (Max)
29
40
55
nA (Max)
Resistance
= Vr)
− VR(Vro
= 6.3V)
FEEDBACK)
VR Change with
VANODE Change
IFB
FEEDBACK Bias
= 5V)
− VR(V+
= 3V)
VANODE ≤ VFB ≤ 5.06V
Current
en
VR Noise
10 Hz to 10 kHz,
VRO = VR
30
µVRMS
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions.
Note 2: Input voltage above V+ is allowed. As long as one input pin voltage remains inside the common-mode range, the comparator will deliver the correct output.
Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined
and unpredictable when any parasitic diode or transistor is conducting.
Note 4: Simultaneous short-circuit of multiple comparators while using high supply voltages may force junction temperature above maximum, and thus should not
be continuous.
Note 5: Junction temperature may be calculated using TJ = TA + PD θJA. The given thermal resistance is worst-case for packages in sockets in still air. For packages
soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θJA is 90˚C/W for the N package, and 135˚C/W for the
WM package.
Note 6: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 7: Typical values in standard typeface are for TJ = 25˚C; values in bold face type apply for the full operating temperature range. These values represent the
most likely parametric norm.
Note 8: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face).
Note 9: Slew rate is measured with the op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output
voltage transition is sampled at 10V and @ 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V
and 10V.
Note 10: VR is the Cathode-to-feedback voltage, nominally 1.244V.
Note 11: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
106 • ∆VR/(VR[25˚C] • ∆TJ), where ∆VR is the lowest value subtracted from the highest, VR[25˚C] is the value at 25˚C, and ∆TJ is the temperature range. This parameter
is guaranteed by design and sample testing.
Note 12: Hysteresis is the change in VR caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the
hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.
Note 13: Low contact resistance is required for accurate measurement.
5
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Electrical Characteristics
(Continued)
Note 14: A military RETS 613AMX electrical test specification is available on request. The Military screened parts can also be procured as a Standard Military Drawing.
Simplified Schematic Diagrams
Op Amp
DS009226-2
Comparator
DS009226-3
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6
Simplified Schematic Diagrams
(Continued)
Reference/Bias
DS009226-4
Typical Performance Characteristics (Reference)
TJ = 25˚C, FEEDBACK pin shorted to V− =
0V, unless otherwise noted
Reference Voltage vs Temp.
Reference Voltage Drift
Accelerated Reference
Voltage Drift vs Time
DS009226-50
DS009226-49
DS009226-51
Reference Voltage vs
Current and Temperature
Reference Voltage vs
Current and Temperature
DS009226-52
Reference Voltage vs
Reference Current
DS009226-53
7
DS009226-54
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Typical Performance Characteristics (Reference)
TJ = 25˚C, FEEDBACK pin shorted to V−
= 0V, unless otherwise noted (Continued)
Reference Voltage vs
Reference Current
Reference AC
Stability Range
FEEDBACK Current vs
FEEDBACK-to-Anode Voltage
DS009226-55
FEEDBACK Current vs
FEEDBACK-to-Anode Voltage
DS009226-56
Reference Noise Voltage
vs Frequency
DS009226-58
Reference Power-Up Time
DS009226-57
Reference Small-Signal
Resistance vs Frequency
DS009226-59
Reference Voltage with
FEEDBACK Voltage Step
DS009226-60
Reference Voltage with
100 z 12 µA Current Step
DS009226-61
DS009226-62
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8
DS009226-63
Typical Performance Characteristics (Reference)
TJ = 25˚C, FEEDBACK pin shorted to V−
= 0V, unless otherwise noted (Continued)
Reference Step Response
for 100 µA z 10 mA
Current Step
Reference Voltage Change
with Supply Voltage Step
Reference Change vs
Common-Mode Voltage
DS009226-65
DS009226-64
DS009226-66
Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT
= V+/2, TJ = 25˚C, unless otherwise noted
Input Common-Mode
Voltage Range vs
Temperature
VOS vs Junction
Temperature
Input Bias Current vs
Common-Mode Voltage
DS009226-68
DS009226-69
DS009226-67
Large-Signal
Step Response
Output Voltage Swing
vs Temp. and Current
DS009226-70
DS009226-71
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Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2,
VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued)
Output Source Current vs
Output Voltage and Temp.
Output Sink Current vs
Output Voltage
DS009226-72
Output Impedance vs
Frequency and Gain
DS009226-73
Small Signal Pulse
Response vs Temp.
Op Amp Voltage Noise
vs Frequency
Op Amp Current Noise
vs Frequency
DS009226-78
DS009226-77
Small-Signal Voltage Gain vs
Frequency and Temperature
DS009226-79
10
DS009226-74
Small-Signal Pulse
Response vs Load
DS009226-76
DS009226-75
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Output Swing,
Large Signal
DS009226-80
Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2,
VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued)
Small-Signal Voltage Gain
vs Frequency and Load
Follower Small-Signal
Frequency Response
DS009226-81
Power Supply Current
vs Power Supply Voltage
Common-Mode Input
Voltage Rejection Ratio
DS009226-82
Positive Power Supply
Voltage Rejection Ratio
Negative Power Supply
Voltage Rejection Ratio
DS009226-85
DS009226-84
Slew Rate vs Temperature
DS009226-83
Input Offset Current vs
Junction Temperature
DS009226-86
Input Bias Current vs
Junction Temperature
DS009226-87
DS009226-88
11
DS009226-89
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Typical Performance Characteristics (Comparators)
Output Sink Current
Input Bias Current vs
Common-Mode Voltage
DS009226-10
DS009226-11
Comparator
Response Times — Inverting
Input, Positive Transition
Comparator
Response Times — Inverting
Input, Negative Transition
DS009226-12
Comparator
Response Times — Non-Inverting
Input, Positive Transition
DS009226-13
Comparator
Response Times — Non-Inverting
Input, Negative Transition
DS009226-14
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DS009226-15
12
Typical Performance Characteristics (Comparators)
Comparator
Response Times — Inverting
Input, Positive Transition
(Continued)
Comparator
Response Times — Inverting
Input, Negative Transition
DS009226-16
Comparator
Response Times — Non-Inverting
Input, Positive Transition
DS009226-17
Comparator
Response Times — Non-Inverting
Input, Negative Transition
DS009226-18
DS009226-19
Typical Performance Distributions
Average VOS Drift
Military Temperature Range
Average VOS Drift
Industrial Temperature Range
DS009226-20
DS009226-21
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Typical Performance Distributions
(Continued)
Average VOS Drift
Commercial Temperature Range
Average IOS Drift
Military Temperature Range
DS009226-22
DS009226-23
Average IOS Drift
Industrial Temperature Range
Op Amp Voltage
Noise Distribution
DS009226-24
DS009226-27
Average IOS Drift
Commercial Temperature Range
Op Amp Current
Noise Distribution
DS009226-25
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DS009226-28
14
Typical Performance Distributions
(Continued)
Voltage Reference Broad-Band
Noise Distribution
DS009226-30
FIGURE 2. Reference Equivalent Circuit
DS009226-26
DS009226-31
Application Information
FIGURE 3. 1.2V Reference
VOLTAGE REFERENCE
Capacitors in parallel with the reference are allowed. See the
Reference AC Stability Range typical curve for capacitance
values — from 20 µA to 3 mA any capacitor value is stable.
With the reference’s wide stability range with resistive and
capacitive loads, a wide range of RC filter values will perform
noise filtering.
Reference Biasing
The voltage reference is of a shunt regulator topology that
models as a simple zener diode. With current Ir flowing in the
“forward” direction there is the familiar diode transfer function. Ir flowing in the reverse direction forces the reference
voltage to be developed from cathode to anode. The cathode may swing from a diode drop below V− to the reference
voltage or to the avalanche voltage of the parallel protection
diode, nominally 7V. A 6.3V reference with V+ = 3V is
allowed.
Adjustable Reference
The FEEDBACK pin allows the reference output voltage,
Vro, to vary from 1.24V to 6.3V. The reference attempts to
hold Vr at 1.24V. If Vr is above 1.24V, the reference will conduct current from Cathode to Anode; FEEDBACK current always remains low. If FEEDBACK is connected to Anode,
then Vro = Vr = 1.24V. For higher voltages FEEDBACK is
held at a constant voltage above Anode — say 3.76V for Vro
= 5V. Connecting a resistor across the constant Vr generates
a current I = R1/Vr flowing from Cathode into FEEDBACK
node. A Thevenin equivalent 3.76V is generated from FEEDBACK to Anode with R2 = 3.76/I. Keep I greater than one
thousand times larger than FEEDBACK bias current for
< 0.1% error — I≥32 µA for the military grade over the military
temperature range (I≥5.5 µA for a 1% untrimmed error for a
commercial part).
DS009226-29
FIGURE 1. Voltage Associated with Reference
(current source Ir is external)
The reference equivalent circuit reveals how Vr is held at the
constant 1.2V by feedback, and how the FEEDBACK pin
passes little current.
To generate the required reverse current, typically a resistor
is connected from a supply voltage higher than the reference
voltage. Varying that voltage, and so varying Ir, has small effect with the equivalent series resistance of less than an ohm
at the higher currents. Alternatively, an active current source,
such as the LM134 series, may generate Ir.
DS009226-32
FIGURE 4. Thevenin Equivalent of Reference
with 5V Output
15
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Application Information
(Continued)
DS009226-36
DS009226-33
FIGURE 8. Diode in Series with R1 Causes Voltage
Across R1 and R2 to be Proportional to Absolute
Temperature (PTAT)
R1 = Vr/I = 1.24/32µ = 39k
R2 = R1 {(Vro/Vr) − 1} = 39k {(5/1.24) − 1)} = 118k
FIGURE 5. Resistors R1 and R2 Program Reference
Output Voltage to be 5V
Connecting a resistor across Cathode-to-FEEDBACK creates a 0 TC current source, but a range of TCs may be
synthesized.
Understanding that Vr is fixed and that voltage sources, resistors, and capacitors may be tied to the FEEDBACK pin, a
range of Vr temperature coefficients may be synthesized.
DS009226-37
I = Vr/R1 = 1.24/R1
DS009226-34
FIGURE 6. Output Voltage has Negative Temperature
Coefficient (TC) if R2 has Negative TC
FIGURE 9. Current Source is Programmed by R1
DS009226-35
DS009226-38
FIGURE 7. Output Voltage has Positive TC
if R1 has Negative TC
FIGURE 10. Proportional-to-Absolute-Temperature
Current Source
DS009226-39
FIGURE 11. Negative-TC Current Source
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16
Application Information
LM124), and increased slew rate as shown in the characteristic curves. A resistor pull-up or pull-down will force
class-A operation with only the PNP or NPN output transistor conducting, eliminating cross-over distortion.
(Continued)
Reference Hysteresis
The reference voltage depends, slightly, on the thermal history of the die. Competitive micro-power products vary — always check the data sheet for any given device. Do not assume that no specification means no hysteresis.
3.
OPERATIONAL AMPLIFIERS AND COMPARATORS
Any amp, comparator, or the reference may be biased in any
way with no effect on the other sections of the LM613, except when a substrate diode conducts, see Electrical Characteristics (Note 1). For example, one amp input may be outside the common-mode range, another amp may be
operating as a comparator, and all other sections may have
all terminals floating with no effect on the others. Tying inverting input to output and non-inverting input to V− on unused amps is preferred. Unused comparators should have
non-inverting input and output tied to V+, and inverting input
tied to V−. Choosing operating points that cause oscillation,
such as driving too large a capacitive load, is best avoided.
Capacitive Drive: Limited by the output pole caused by
the output resistance driving capacitive loads, a
pull-down resistor conducting 1 mA or more reduces the
output stage NPN re until the output resistance is that of
the current limit 25Ω. 200 pF may then be driven without
oscillation.
Comparator Output Stage
The comparators, like the LM139 series, have open-collector
output stages. A pull-up resistor must be added from each
output pin to a positive voltage for the output transistor to
switch properly. When the output transistor is OFF, the output voltage will be this external positive voltage.
For the output voltage to be under the TTL-low voltage
threshold when the output transistor is ON, the output current must be less than 8 mA (over temperature). This impacts the minimum value of pull-up resistor.
The offset voltage may increase when the output voltage is
low and the output current is less than 30 µA. Thus, for best
accuracy, the pull-up resistor value should be low enough to
allow the output transistor to sink more than 30 µA.
Op Amp Output Stage
These op amps, like the LM124 series, have flexible and
relatively wide-swing output stages. There are simple rules
to optimize output swing, reduce cross-over distortion, and
optimize capacitive drive capability:
1. Output Swing: Unloaded, the 42 µA pull-down will bring
the output within 300 mV of V− over the military temperature range. If more than 42 µA is required, a resistor from
output to V− will help. Swing across any load may be improved slightly if the load can be tied to V+, at the cost of
poorer sinking open-loop voltage gain.
2. Cross-Over Distortion: The LM613 has lower cross-over
distortion (a 1 VBE deadband versus 3 VBE for the
Op Amp and Comparator Input Stage
The lateral PNP input transistors, unlike those of most op
amps, have BVEBO equal to the absolute maximum supply
voltage. Also, they have no diode clamps to the positive supply nor across the inputs. These features make the inputs
look like high impedances to input sources producing large
differential and common-mode voltages.
Typical Applications
DS009226-40
FIGURE 12. High Current, High Voltage Switch
17
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Typical Applications
(Continued)
DS009226-41
FIGURE 13. High Speed Level Shifter. Response time is approximately
1.5 µs, where output is either approximately +V or −V.
DS009226-42
FIGURE 14. Low Voltage Regulator. Dropout voltage is approximately 0.2V.
DS009226-43
*10k must be low
t.c. trimpot
FIGURE 15. Ultra Low Noise, 10.00V Reference. Total output noise is typically 14 µVRMS.
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18
Typical Applications
(Continued)
DS009226-44
FIGURE 16. Basic Comparator
DS009226-46
FIGURE 18. Wide-Input Range
Comparator with TTL Output
DS009226-45
FIGURE 17. Basic Comparator with External Strobe
DS009226-47
FIGURE 19. Comparator with
Hysteresis (∆VH = +V(1k/1M))
19
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Physical Dimensions
inches (millimeters) unless otherwise noted
20-Lead Small Outline Package (E)
Order Number LM613AME/883
NS Package Number E20A
16-Lead Ceramic Dual-In-Line Package (J)
Order Number LM613AMJ/883
NS Package Number J16A
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20
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
16-Lead Small Outline Package (WM)
Order Number LM613IWM
NS Package Number M16B
16-Lead Molded Dual-In-Line Package (N)
Order Number LM613CN, LM613AIN, LM613IN, LM613AMN or LM613MN
NS Package Number N16A
21
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LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference
Notes
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
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2. A critical component is any component of a life
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can be reasonably expected to cause the failure of
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.