TELEFUNKEN Semiconductors TFDU6100E/TFDS6500E/TFDT6500E 2.7–5.5V Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) Features Compliant to IrDA 1.2 (Up to 4 Mbit/s), HP–SIR, Sharp ASK and TV Remote Wide Operating Voltage Range (2.7 to 5.5 V ) Low-Power Consumption (3 mA Supply Current) Power Shutdown Mode (1 A Shutdown Current) Long Range (Up to 2.0 m at 4 Mbit/s in Nominal Design) High Efficiency Emitter (120 mW/sr min 15) Three Surface Mount Package Options – Universal (9.7 x 4.7 x 4.0 mm) – Side View (13.0 x 5.95 x 5.3 mm) – Top View (13.0 x 7.6 x 5.95 mm) Applications BabyFace (Universal) Package Capable of Surface Mount Solderability to Side and Top View Orientation Directly Interfaces With Various Super I/O and Controller Devices Built–In EMI Protection – No External Shielding Necessary Few External Components Required Backward Compatible to All TEMIC SIR and FIR Infrared Transceivers Notebook Computers, Desktop PCs, Palmtop Computers (Win CE, Palm PC), PDAs Digital Still and Video Cameras Printers, Fax Machines, Photocopiers, Screen Projectors Telecommunication Products (Cellular Phones, Pagers) Internet TV Boxes, Video Conferencing Systems External Infrared Adapters (Dongles) Medical and Industrial Data Collection Devices Description The TFDU6100E, TFDS6500E, and TFDT6500E are a family of low-power infrared transceiver modules compliant to the IrDA 1.2 standard for fast infrared (FIR) data communication, supporting IrDA speeds up to 4.0 Mbit/s, HP–SIR, Sharp ASK and carrier based remote control modes up to 2 MHz. Integrated within the transceiver modules are a photo PIN diode, infrared emitter (IRED), and a low-power CMOS control IC to provide a total front–end solution in a single package. TEMIC’s FIR transceivers are available in three package options, including our BabyFace package (TFDU6100E), the smallest FIR transceiver available on the market. This wide selection provides flexibility for a variety of applications and space constraints. The transceivers are capable of directly interfacing with a wide variety of I/O chips which perform the pulse-width modulation/demodulation function, including National Semiconductor’s PC87338, PC87108 and PC87109, SMSC’s FDC37C669, FDC37N769 and CAM35C44, and Hitachi’s SH3. At a minimum, a current-limiting resistor in series with the infrared emitter and a VCC bypass capacitor are the only external components required to implement a complete solution. Package Options TFDU6100E Baby Face (Universal) TFDS6500E Side View TFDT6500E Top View This product is currently in devleopment. Inquiries regarding the status of this product should be directed to TEMIC Marketing. Pending—Rev. A, 03-Apr-98 1 Pre-Release Information TELEFUNKEN TFDU6100E/TFDS6500E/TFDT6500E Semiconductors Functional Block Diagram VCC Driver Amplifier Rxd Comparator IRED Anode AGC Logic SD/Mode IRED Cathode Txd Open Collector Driver GND Pin Assignment and Description Pin Number “ U ”, “ T ” Option “S” Option Function 1 8 IRED Anode 2 1 IRED Cathode 3 7 Txd 4 2 Rxd 5 6 6 Description I/O Active Transmit Data Input I HIGH Received Data Output, push–pull CMOS driver output capable of driving a standard CMOS or TTL load. No external pull–up or pull–down resistor is required (pin is floating when device is in shutdown mode). O LOW SD/Mode Shutdown/Mode I HIGH 3 VCC Supply Voltage 7 5 NC Do not connect. 8 4 GND IRED anode, should be externally connected to VCC through a current control resistor IRED cathode, internally connected to driver transistor Ground 8 IRED 7 6 5 Detector IRED Detector 1 2 3 4 5 6 7 8 1 IRED ”U” Option BabyFace (Universal) 2 3 4 Detector ”S” Option Side View 2 1 2 3 4 5 6 7 8 ”T” Option Top View Pending—Rev. A, 03-Apr-98 Pre-Release Information TELEFUNKEN Semiconductors TFDU6100E/TFDS6500E/TFDT6500E Ordering Information Part Number Qty/ Reel Description TFDU6100E–TR3 1000 pcs Oriented in carrier tape for side view surface mounting TFDU6100E–TT3 1000 pcs Oriented in carrier tape for top view surface mounting TFDS6500E–TR3 750 pcs TFDT6500E–TR3 750 pcs Absolute Maximum Ratings Parameter Supply Voltage Range Supply Voltage Range (Anode) Symbol Test Conditionsa Minb Typc Maxb VCC – 0.5 6 Vanode 0 VCC+1.5 Unit V Input Currentsd 10 Output Sinking Current 25 mA Power Dissipatione PD 350 Junction Temperature TJ 125 Ambient Temperature Range (Operating) Tamb –25 85 Storage Temperature Range Tstg –25 85 Soldering Temperature See Recommended Solder Profile Average Output Current IIRED (DC) Repetitive Pulsed Output Current IIRED (RP) IRED Anode Voltage at Current Output 130 mA <90 µs, ton <20% 600 – 0.5 6 Transmitter Data Input Voltage VTxd – 0.5 VCC+0.5 Receiver Data Output Voltage VRxd – 0.5 VCC+0.5 d 2.5 Virtual Source Maximum Intensity for Class 1 Operation of IEC 825 or EN60825g °C 240 VIREDA Sizef mW EN60825, 1997 2.8 V mm 320 mW/sr Notes a. Reference point GND pin unless otherwise noted. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Maximum input current for all pins (except IRED Anode pin). e. See Derating Curve. f. Method: (1-1/e) encircled energy. g. Worst case IrDA SIR pulse pattern. Pending—Rev. A, 03-Apr-98 3 Pre-Release Information TELEFUNKEN TFDU6100E/TFDS6500E/TFDT6500E Semiconductors Electrical Characteristics Parameter Symbol Test Conditionsa Minb Typc Maxb Unit 5.5 V Transceiver Supply Voltage VCC Dynamic Supply Currentd ICC SD = Low, Ee = 0 mW/m2 2.7 3 4 Dynamic Supply Current ICC SD = Low, Ee = 1 klxd 3 4 Standby Supply Currente ISD SD = High, Mode = floating, 25°C, Ee = 0 klx 1 Standby Supply Current ISD SD = High, Mode = floating, T =25°C, Ee = 1 klxd 1.5 Standby Supply Currente ISD SD = High, Mode = floating, T = 85°C 5 Operating Temperature Range TA –25 85 Output Voltage Low VOL Rload = 2.2 kΩ, Cload = 15 pF Output Voltage High VOH Rload = 2.2 kΩ, Cload = 15 pF Input Voltage Low VIL 0 Input Voltage Highf VIH 0.9 * VCC Input Voltage Highg VIH Input Leakage Current IL Input Capacitance CI 0.5 mA µA °C 0.8 VCC–0.5 VCC ≥ 4.5V 0.8 V +10 µA 5 pF 2.4 –10 Notes a. Tamb = 25, VCC = 2.7 – 5.5 V unless otherwise noted. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Receive mode only. In transmit mode, add additional 100 mA (typ) to IRED current. e. Not ambient light sensitive. f. CMOS levels. g. TTL levels. 4 Pending—Rev. A, 03-Apr-98 Pre-Release Information TELEFUNKEN Semiconductors TFDU6100E/TFDS6500E/TFDT6500E Optoelectronic Characteristics Parameter Symbol Test Conditionsa Minb Typc Maxb Unit Receiver Minimum Detection Threshold Irradiance Ee 9.6 kbit/s to 115.2 kbit/s 20 35 Minimum Detection Threshold Irradiance Ee 1.152 Mbit/s to 4 Mbit/s 50 80 Maximum Detection Threshold Irradiance Ee 5 Logic LOW Receiver Input Irradiance Ee 4 Rise Time of Output Signal tRR 10% to 90%, @2.2 kΩ, 15pF 10 40 Fall Time of Output Signal tFR 90% to 10%, @2.2 kΩ, 15pF 10 40 Rx Pulse Width of Output Signal, 50% Pw Input pulse length 20 µs, 9.6 kbit/s 1.2 Rx Pulse Width of Output Signal, 50% Pw Input pulse length 1.41µs, 115.2 kbit/s mode 1.2 2.2 Rx Pulse Width of Output Signal, 50% Pw Input pulse length 217 ns, 4.0 Mbit/s mode 190 260 Rx Pulse Width of Output Signal, 50% Pw Input pulse length 125 ns, 4.0 Mbit/s mode 90 165 Rx Pulse Width of Output Signal, 50% Pw Input pulse length 250 ns, 4.0 Mbit/s mode (double pulse) 210 290 mW/m2 kW/m2 10 mW/m2 10 ns 20 µs ns Input Irradiance = 90 mW/m2, 4.0 Mbit/s mode Jitter, Leading Edge Latency 10 120 µs 0.48 0.55 A 140 280 mW/sr .04 mW/sr 900 nm 800 mV 40 ns 25 % tL Transmitter IRED Operating Current ID VCC = 5 V, R1= 5.6 Ω Output Radiant Intensityd Ie Txd = High, SD = Low, R1= 5.6 Ω Output Radiant Intensity Half Angle α Output Radiant Intensityd Ie Peak Wavelength λP ±24 Txd = Low or SD = Highe, RL=5.6 Ω 880 IF = 600 mA, pulse length 2 µs, duty cycle 25% Voltage drop at output driver Rise Time, Fall Time 120 tR, tF 400 10 Optical Overshoot Notes a. Tamb = 25C, VCC = 2.7 – 5.5 V unless otherwise noted. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. VCC = 5 V, a = 0, 15 e. Receiver is inactive as long as SD = High Pending—Rev. A, 03-Apr-98 5 Pre-Release Information TELEFUNKEN TFDU6100E/TFDS6500E/TFDT6500E Semiconductors Recommended Circuit Diagram TEMIC FIR transceivers integrate a sensitive receiver and a built–in power driver. The combination of both needs a careful circuit board layout. The use of thin, long resistive and inductive wiring should be avoided. The inputs (Txd, SD/Mode) and the output Rxd should be directly (DC) coupled to the I/O circuit. 300 250 Intensity (mW/sr) The only required components for designing an IrDA 1.2 compatible design using TEMIC FIR transceivers are a current limiting resistor, R1, to the IRED. However, depending on the entire system design and board layout, additional components may be required (see Figure 1). 200 5.25 V, Min. Efficiency, Min. VF, Min. RDSon 150 4.75 V, Min. Efficiency, Min. VF, Max. RDSon 100 50 IrDA Field of View: Cone of 15 0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VCC2 Current Control Resistor (W) TFDx6x00 R1 Figure 2. Ie vs. Rl IRED Cathode R2 Rxd Txd Rxd C1 C2 VCC GND IRED Anode Txd SD/Mode NC GND The placement of these parts is critical. It is strongly recommended to position C2 as near as possible to the transceiver power supply pins. A tantalum capacitor should be used for C1 while a ceramic capacitor is used for C2. Also, when connecting the described circuit to the power supply, low impedance wiring should be used. Table 1. Recommended Application Circuit Components SC Note: Outlined components are optional depending on quality of power supply. Figure 1. Recommended Application Circuit R1 is used for controlling the current through the IR emitter. For increasing the output power of the IRED, the value of the resistor should be reduced. Similarly, to reduce the output power of the IRED, the value of the resistor should be increased. For typical values of R1 see Figure 2 . For IrDA compliant operation, a current control resistor of 5.6 Ω is recommended. The upper drive current limitation is dependent on the duty cycle and is given by the absolute maximum ratings on the data sheet. R2, C1 and C2 are optional and dependent on the quality of the supply voltage VCC and injected noise. An unstable power supply with dropping voltage during transmission may reduce sensitivity (and transmission range) of the transceiver. Component Recommended Value C1 4.7 mF, Tantalum C2 0.1 µF, Ceramic R1 5.6 Ω , 0.25 W (recommend using two 0.125 W resistors in parallel) R2 47 Ω , 0.125 W Mode Switching The TFDU6100E, TFDS6500E and TFDT6500E powers on in a no default mode, therefore the data transfer rate has to be set by a programming sequence as described below or selected by setting the mode pin. When using the Mode pin, the standby current might be increased to about 50 to 60 µA. In standby mode, the mode input should float to minimize standby current. The low frequency mode covers speeds up to 115.2 kbit/s. Signals with higher data rates should be detected in the high frequency mode. Lower data frequency data can also 6 Pending—Rev. A, 03-Apr-98 Pre-Release Information TELEFUNKEN TFDU6100E/TFDS6500E/TFDT6500E Semiconductors received in high frequency mode with reduced sensitivity. To switch the transceivers from low frequency mode to the 4.0 Mbit/s mode and vice versa, the programming sequences described below are required. 2. Set Txd input to logic ”HIGH”. Wait ts w200 ns. 3. Set SD/MODE to logic ”LOW” (this negative edge latches state of Txd, which determines speed setting). 4. After waiting th w200 ns Txd can be set to logic ”LOW”. The hold time of Txd is limited by the maximum allowed pulse length. SD/Mode ts Txd is now enabled as normal Txd input for the high bandwidth mode. th High Setting to the Lower Bandwidth Mode (2.4 to 115.2 kbit/s) Txd Low High: FIR Low: SIR Mode Pin Figure 3. Timing Diagram Setting to the High Bandwidth Mode (0.576 to 4.0 Mbit/s) 1. Set SD/MODE input to logic ”HIGH”. 1. Set SD/MODE input to logic ”HIGH”. 2. Set Txd input to logic ”LOW”. Wait ts w200 ns. 3. Set SD/MODE to logic ”LOW” (this negative edge latches state of Txd, which determines speed setting). 4. Txd must be held for th w200 ns. Txd is now enabled as normal Txd input for the lower bandwidth mode. Pending—Rev. A, 03-Apr-98 7 Pre-Release Information TFDU6100E/TFDS6500E/TFDT6500E TELEFUNKEN Semiconductors TFDU6100E – BabyFace (Universal) Package Mechanical Dimensions 8 Pending—Rev. A, 03-Apr-98 Pre-Release Information TELEFUNKEN TFDU6100E/TFDS6500E/TFDT6500E Semiconductors TFDS6500E – Side View Package Mechanical Dimensions TK84 731 TFDS6500 Pending—Rev. A, 03-Apr-98 9 Pre-Release Information TFDU6100E/TFDS6500E/TFDT6500E TELEFUNKEN Semiconductors TFDT6500E – Top View Package Mechanical Dimensions 10 Pending—Rev. A, 03-Apr-98 Pre-Release Information TELEFUNKEN Semiconductors TFDU6100E/TFDS6500E/TFDT6500E Recommended SMD Pad Layouta TFDU6100E - BabyFace (Universal) Package 0.8 TFDT6500E - Top View Package TFDS6500E - Side View Package a. (note: leads of the device should be at least 0.3 mm within the ends of the pads. Pad 1 is longer to designate Pin 1 connection to transceiver.) The leads of the device should be sodered in the center position pads. Pending—Rev. A, 03-Apr-98 11 Pre-Release Information TELEFUNKEN TFDU6100E/TFDS6500E/TFDT6500E Semiconductors Recommended Solder Profile 260 10 s Max. @ 230 C 240 220 2 – 4 C/Seconds C) 200 Temperature ( 180 160 140 120 – 180 Seconds 90 s Max. 120 100 80 2 – 4 C/Seconds 60 40 20 0 0 50 100 150 200 250 300 350 Time (Seconds) Current Derating Curve 600 Peak Operating Current (mA) 500 400 300 Current derating as a function of the maximum forward current of IRED. Maximum duty cycle: 25% 200 100 0 –40 –20 0 20 40 60 80 100 120 140 Temperature (C) 12 Pending—Rev. A, 03-Apr-98 Pre-Release Information