ETC DCR840F?

DCR840F
DCR840F
Phase Control Thyristor
Preliminary Information
Replaces February 2002, version DS5521-1.1
DS5521-2.0 June 2002
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VDRM
4800V
■ High Surge Capability
IT(AV)
840A
ITSM
12,500A
dVdt*
1000V/µs
dI/dt
300A/µs
■ Low Turn-on Losses
APPLICATIONS
■ High Power Converters
*Higher dV/dt selections available
■ High Voltage Power Supplies
■ DC Motor Control
VOLTAGE RATINGS
Type Number
DCR840F48
DCR840F46
DCR840F44
DCR840F42
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
4800
4600
4400
4200
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 100mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR840F48
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR840F
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol
Parameter
Conditions
Max.
Units
840
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1320
A
Continuous (direct) on-state current
-
1220
A
610
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
950
A
Continuous (direct) on-state current
-
830
A
Conditions
Max.
Units
670
A
IT
Half wave resistive load
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise.
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1050
A
Continuous (direct) on-state current
-
940
A
470
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
740
A
Continuous (direct) on-state current
-
630
A
IT
Half wave resistive load
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DCR840F
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
10
kA
VR = 50% VRRM - 1/4 sine
0.5 x 106
A2s
10ms half sine; Tcase = 125oC
12.5
kA
VR = 0
0.78 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.022
o
Anode dc
-
0.038
o
Cathode dc
-
0.052
o
C/W
Double side
-
0.004
o
C/W
Single side
-
0.008
o
C/W
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
–55
125
o
Clamping force
18.0
22.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 19.5kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DCR840F
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
100
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC.
-
1000
V/µs
-
150
A/µs
Rate of rise of on-state current
From 67% VDRM to 1000A
Gate source 1.5A
tr = 0.5µs. Tj = 125oC.
Repetitive 50Hz
dI/dt
Non-repetitive
-
300
A/µs
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
1.3
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.92
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 30V, 15Ω
Rise time 0.5µs, Tj = 25oC
-
1.8
µs
tq
Turn-off time
VRM = 50V, dIRR/dt = 10A/µs,
VDR = 50% VDRM, dVDR/dt = 20V/µs linear
600
-
µs
IL
Latching current
Tj = 25oC, VD = 5V
-
1000
mA
IH
Holding current
Tj = 25oC, Rg-k = ∞
-
500
mA
Max.
Units
VT(TO)
IT = 1000A, tp = 1ms, Tj = 125˚C,
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.5
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
200
mA
VGD
Gate non-trigger voltage
At 67% VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
30
A
PGM
Peak gate power
See table, gate characteristics curve
150
W
PG(AV)
Mean gate power
10
W
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DCR840F
CURVES
3000
2500
2400
2000
Instantaneous on-state current, IT - (A)
Tj = 125˚C
2800
Maximum
Minimum
2600
Mean power dissipation - (W)
2200
2000
1800
1600
1400
1200
1000
dc
1/2 wave
3 phase
6 phase
1500
1000
800
500
600
400
200
0
0.6
1.0
1.4
1.8
2.2
2.6
3.0 3.4
3.8
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
4.2
0
0
100 200 300 400 500 600 700 800 900 1000
Mean on-state current, IT(AV) - (A)
Fig.3 Dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 6.698580464
B = –1.571103736
C = –0.001210868
D = 0.239948957
these values are valid for Tj = 125˚C for IT 300A to 3000A
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DCR840F
10000
1000
Maximum
Minimum
Reverse recovery current, Irr - (A)
Reverse recovery charge, Qrr - (µC)
Maximum
Minimum
1000
100
100
1
10
Rate of rise of on-state current, dI/dt - (A/µs)
10
1
100
10
Rate of rise of on-state current, dI/dt - (A/µs)
Fig.4 Recovered charge
Pulse width
µs
400
150
125
100
25
-
10
r lim
it
Tj = 125˚C
pe
Up
95%
1
VGD
Lo
0.1
0.001
0.01
r
we
lim
it 5
%
Tj = 25˚C
Tj = -40˚C
Gate trigger voltage, VGT - (V)
100
150
150
150
50
-
0W
10
W
50
50
150
150
150
150
20
0.1
Table gives pulse power PGM in Watts
W
20
W
10
5W
100
200
500
1ms
10ms
Frequency Hz
Fig.5 Reverse recovery current
Region of certain
triggering
0.1
1
Gate trigger current, IGT - (A)
Fig.6 Gate characteristics
10
Thermal Impedance - Junction to case - (˚C/W)
100
100
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
Anode side cooled
Double side cooled
0.01
0.001
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.6 Transient thermal impedance - junction to case
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DCR840F
30
1.2
14
Surge current (VR = 0)
1.0
20
0.8
Peak half sine wave on-state current - (kA)
25
10
15
0.6
10
0.4
ITSM (VR = 0)
5
ITSM (VR = 50% VRRM) 0.2
I2t value - (A2s x 106)
Peak half sine on-state current - (kA)
Surge current (VR = 50% VRRM)
12
8
6
4
2
I2t (VR = 0)
I2t (VR = 50% VRRM)
1
2
3
4
5
6
7
8
9
Pulse length, half sine wave - (ms)
Fig.7 Sub-cycle surge currents
10
0
0
0
10
20
30
40
Number of cycles @ 50Hz
50
60
Fig.8 Multi-cycle surge currents
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DCR840F
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode
Ø76 max
Ø48 nom
27.0
25.4
Ø1.5
Gate
Ø48 nom
Anode
Nominal weight: 450g
Clamping force: 19.5kN ± 10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: F
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
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Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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