DCR720E DCR720E Phase Control Thyristor Preliminary Information DS5485-1.2 February 2002 FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction KEY PARAMETERS 1800V VDRM 724A IT(AV) 9800A ITSM dV/dt* 1000V/µs dI/dt 700A/µs *Higher dV/dt selections available APPLICATIONS ■ High Power Converters ■ DC Motor Control ■ High Voltage Power Supplies VOLTAGE RATINGS Part and Ordering Number DCR720E18 DCR720E16 DCR720E14 DCR720E12 Repetitive Peak Voltages VDRM and VDRM V 1800 1600 1400 1200 Conditions Tvj = 0˚ to 125˚C, IDRM = IRRM = 30mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: E (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR720E16 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/9 www.dynexsemi.com DCR720E CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Parameter Symbol Test Conditions Max. Units 724 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1140 A Continuous (direct) on-state current - 1025 A 500 A IT Half wave resistive load Single Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 790 A Continuous (direct) on-state current - 670 A Max. Units 570 A IT Half wave resistive load Tcase = 80˚C unless stated otherwise. Parameter Symbol Test Conditions Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 895 A Continuous (direct) on-state current - 790 A 390 A IT Half wave resistive load Single Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 610 A Continuous (direct) on-state current - 505 A IT Half wave resistive load 2/9 www.dynexsemi.com DCR720E SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Test Conditions Max. Units 7.8 kA 0.3 x 106 A2s 9.8 kA 0.48 x 106 A2s 10ms half sine, Tcase = 125˚C VR = 50% VRRM - 1/4 sine Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125˚C I2t for fusing VR = 0 DYNAMIC CHARACTERISTICS Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125˚C - 30 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 1100A - 350 A/µs - 700 A/µs IRRM/IRRM Repetitive 50Hz Gate source 20V, 10Ω, Non-repetitive tr ≤ 0.5µs, Tj = 125˚C Threshold voltage At Tvj = 125˚C - 0.88 V rT On-state slope resistance At Tvj = 125˚C - 0.65 mΩ tgd Delay time VD = 67% VDRM, gate source 10V, 5Ω - 1.5 µs 300 400 µs VT(TO) tr = 0.5µs, Tj = 25˚C tq Turn-off time IT = 500A, tp = 1ms, Tj =125˚C, VR = 50V, dIRR/dt = 20A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear IL Latching current Tj = 25˚C, VD = 5V - 500 mA IH Holding current Tj = 25˚C, VD = 5V - 70 mA 3/9 www.dynexsemi.com DCR720E THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Test Conditions Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Min. Max. Units Double side cooled DC - 0.041 ˚CW Single side cooled Anode DC - 0.074 ˚CW Cathode DC - 0.092 ˚CW Double side - 0.018 ˚CW (with mounting compound) Single side - 0.036 ˚CW On-state (conducting) - 135 ˚C Reverse (blocking) - 125 ˚C Clamping force 8.0kN Tstg Storage temperature range –55 125 ˚C Fm Clamping force 7.2 8.8 kN GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 150 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table, gate characteristics curve 100 W PG(AV) Mean gate power 5 W - - 4/9 www.dynexsemi.com DCR720E CURVES 1200 3000 Tj = 125˚C 1000 Mean power dissipation - (W) Instantaneous on-state current, IT(AV) - (A) 2500 2000 1500 1000 500 0 0.5 800 600 400 dc 1/2 wave 3 phase 6 phase 200 1.0 1.5 2.0 2.5 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics 3.0 0 0 200 400 600 800 Mean on-state current, IT(AV) - (A) 1000 Fig.3 Power dissipation VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT Where A = 0.2366 B = 0.1182 C = 0.0005 D = –0.0019 these values are valid for Tj = 125˚C for IT 100A to 3000A 5/9 www.dynexsemi.com DCR720E 100 Gate trigger voltage, VGT - (V) IT = 500A 1000 Pulse width µs 20 25 100 500 1ms 10ms Frequency Hz 400 50 100 100 100 100 100 100 100 100 100 100 25 100 100 12.5 100 50 10 - 10 er Upp limi t 95 % 1 tp 100 0.1 VGD e L ow 0.25xIRM dIT/dt IRM 1.0 10 Rate of decay of on-state current, dIT/dt - (A/µs) 0.1 0.001 100 0.01 0.1 Time - (s) Effective thermal resistance Junction to case ˚C/W Double side 0.041 0.044 0.051 0.061 1.0 Anode side 0.074 0.077 0.084 0.093 Peak half sine on-state current - (kA) Thermal Impedance - junction to case - (˚C/W) 1 10 IFGM 25 0.75 20 0.6 15 0.45 10 0.3 ITSM (VR = 0) 5 I2t value - (A2s x 106) 0.01 0.001 0.001 0.1 Fig.5 Gate characteristics Double side cooled d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Region of certain triggering Gate trigger current, IGT - (A) Anode side cooled Conduction it 5% 0.01 Fig.4 Stored charge 0.1 r lim Tj = 125˚C IT QR 0W 10 W 50 IT = 1500A Table gives pulse power PGM in Watts W 20 W 10 5W Recovered charge, QR - (µC) Conditions: Tj = 125˚C VR = 50V tp = 1ms Tj = 25˚C Tj = -40˚C 10000 0.15 ITSM (VR = 50% VRRM) I2t (VR = 0) I2t (VR = 50% VRRM) 0 10 Fig.6 Maximum (limit) transient thermal impedance junction to case (˚C/W) 0 1 2 3 4 5 6 7 8 9 Pulse lenght, half sine wave (ms) 10 Fig.7 Sub-cycle surge currents 6/9 www.dynexsemi.com DCR720E 14 Surge current (VR = 0) Surge current (VR = 50% VRRM) Peak half sine wave on-state current - (kA) 12 10 8 6 4 2 0 0 10 20 30 40 number of cycles @ 50Hz 50 60 Fig.8 Multi-cycle surge currents 7/9 www.dynexsemi.com DCR720E PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 30˚ 15˚ 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode tab Cathode Ø42max Ø25nom. 15 14 Ø1.5 Gate Ø25nom. Anode Nominal weight: 82g Clamping force: 8kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: E 8/9 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com