NJD2873T4 Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications • • • . . . designed for high-gain audio amplifier applications. High DC Current Gain hFE = 120 (Min) @ IC = 500 mA = 40 (Min) @ IC = 2 A Low Collector-Emitter Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A High Current-Gain - Bandwidth Product fT = 65 MHz (Min) @ IC = 100 mA http://onsemi.com SILICON POWER TRANSISTORS 2 A, 50 V, 12.5 W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS Vdc VCEO 50 Vdc VEB 5 Vdc IC 2 3 Adc Base Current IB 0.4 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 0.1 W W/°C Total Device Dissipation @ TA = 25°C* Derate above 25°C PD 1.4 0.011 W W/°C TJ, Tstg - 65 to + 150 °C Symbol Max Unit RJC RJA 10 89.3 °C/W Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Peak Operating and Storage Junction Temperature Range 0.165 4.191 Unit 50 0.100 2.54 Value VCB 0.118 3.0 Symbol 0.063 1.6 Rating Collector-Base Voltage 0.190 4.826 MAXIMUM RATINGS Characteristic Thermal Resistance Junction to Case Junction to Ambient* inches mm 0.243 6.172 THERMAL CHARACTERISTICS MARKING DIAGRAM *When surface mounted on minimum pad sizes recommended. YWW xxxxxxxx DPAK CASE 369A xxxxxxxxx Y WW = Specific Device Code = Year = Work Week ORDERING INFORMATION Device NJD2873T4 Semiconductor Components Industries, LLC, 2003 May, 2003 - Rev. 0 1 Package Shipping DPAK 2500 Units / Reel Publication Order Number: NJD2873T4/D NJD2873T4 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 50 - Vdc - 100 - 100 120 40 360 - - 0.3 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 0.5 A, VCE = 2 V) (IC = 2 Adc, VCE = 2 Vdc) hFE - Collector-Emitter Saturation Voltage (Note 2) (IC = 1 A, IB = 0.05 A) VCE(sat) Vdc Base-Emitter Saturation Voltage (Note 1) (IC = 1 A, IB = 0.05 Adc) VBE(sat) - 1.2 Vdc Base-Emitter On Voltage (Note 1) (IC = 1 Adc, VCE = 2 Vdc) VBE(on) - 1.2 Vdc fT 65 - MHz Cob - 80 pF DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (Note 3) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 1. 2. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. fT = hfe• ftest. http://onsemi.com 2 NJD2873T4 PACKAGE DIMENSIONS DPAK CASE 369A-13 ISSUE AB C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE -T- E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M T http://onsemi.com 3 DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 −−− 0.030 0.050 0.138 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 −−− 0.77 1.27 3.51 −−− NJD2873T4 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 4 NJD2873T4/D