RLD78PZW2 Laser Diodes AlGaAs laser diode RLD78PZW2 The RLD78PZW2 is infrared laser diode high power output type (pulse 180mW). This is the best for optical disk drive use, such as CD-R/RW. !Applications Max. X32 speed CD-R/RW drives. !Features 1) Absolute maximum optical power output : pulse 180mW 2) Wave length : Typ. 784nm 3) φ5.6mm small packages !External dimensions (Units : mm) Equivalent circuit diagram 1.0±0.1 φ3.6 0.4±0.1 φ5.6 +0 −0.025 φ4.4+0 φ1.0Min. 90°±2° Glass window (3) P t y p e L.D. (1) (2) (1.27) 1.2±0.1 2.3 6.5±0.5 Chip 3−φ0.45 (3) (2) (1) !Absolute maximum ratings (Tc=25°C) Parameter Output Symbol Limits Unit PO Pulsed 180 mW VR 2 V VR(PIN) − − Operating temperature Topr −10 to +70 °C Storage temperature Tstg −40 to +85 °C Reverse voltage Raser PIN photodiode 1/2 RLD78PZW2 Laser Diodes !Electrical and optical characteristics (Tc=25°C, CW) Parameter Symbol Min. Threshold current Ith − Operating current Iop − Operating voltage Vop − 2.0 2.5 V η 0.7 0.9 1.4 mW/mA Differential efficiency Typ. Max. Unit Conditions 30 50 mA − 120 150 mA Parallel divergence angle θ //∗ 8 9 10 deg Perpendicular divergence angle θ ⊥∗ 15 17 19 deg Parallel deviation angle ∆φ // −2 0 +2 deg Perpendicular deviation angle ∆φ ⊥ −3 0 +3 deg Emission point accuracy ∆X ∆Y ∆Z −80 0 +80 µm Peak emission wavelength λ 779 784 789 nm PO=80mW Astigmatism ∆ − − 6 µm NA=0.15, PO=80mW PO=80mW − ∗ θ // and θ ⊥ are defined as the angle within which the intensity is 50% of the peak value. !Electrical and optical characteristics curves 100 50 50 100 150 200 OPERATING CURRENT : IF (mA) Fig.1 Optical output vs. operating current 250 0.8 WAVELENGTH : λ (nm) 150 0 0 800 1.0 Tc=10°C 30°C 50°C 70°C RELATIVE OPTICAL INTENSITY OPTICAL POWER : PO (mW) 180 0.6 0.4 790 0.2 0 −60 −40 −20 0 20 40 ANGLE (deg) Fig.2 Far field pattern 60 780 5 15 25 35 45 55 65 75 PACKAGE TEMPERATURE : TC (°C) Fig.3 Dependence of wavelength on temperature 2/2