RLD-78PP-G1 / RLD-78NP-G1 Laser Diodes Title AlGaAs, double-heterojunction, visible laser diodes RLD-78PP-G1 / RLD-78NP-G1 RLD-78PP-G1 and RLD-78NP-G1 are the semiconductor laser developed for the laser beam printer application. We have achieved the very small variations of the optical characteristics and low droop by ROHM original Epitaxial growth technology using Molecular Beam Epitaxy. In addition, they have the appropriate characteristics for sensor application as well. !Applications Laser beam printers Sensors !External dimensions (Units : mm) 1.0±0.1 φ3.6 !Features 1) Minimum variation of radiation beam angle. 2) Low droop. 3) High stability wave length. 4) Can be driven by single power supply. +0 3−φ0.45 (2) !Absolute maximum ratings (Tc=25°C) Reverse voltage Symbol Limits Unit Po 5 mW V VR 2 PIN photodiode VR(PIN) 30 V Operating temperature Topr -10~+60 ˚C Storage temperature Tstg -40~+85 ˚C Laser L.D. P.D. (1) (2) (3) N T y p e (1.27) 1.2±0.1 6.5±0.5 2.3 Chip (1) Parameter T y p e Glass window φ5.6 −0.025 (3) Output φ4.4+0 φ1.0Min. 0.4±0.1 (3) P 90˚±2˚ L.D. P.D. (1) (2) RLD-78PP-G1 / RLD-78NP-G1 Laser Diodes !Electrical and optical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions - Threshold current Ith 10 25 45 mA Operating current Iop 15 45 65 mA Po=3mW Operating voltage Vop - 1.9 2.3 V Po=3mW Differential efficiency η 0.1 0.2 0.3 mW/mA Monitor current Im 0.3 0.55 0.9 mA θ //* 8 11 15 deg θ ⊥* 25 30 38 deg Parallel deviation angle ∆φ // - - ±2 deg Perpendicular deviation angle ∆φ ⊥ - - ±3 deg Emission point accuracy ∆X ∆Y ∆Z - - ±80 µm Peak emission wavelength λ 770 785 795 nm Po=3mW ∆P - 5 10 % Po=3mW Parallel divergence angle Perpendicular divergence angle Droop 2mW I(3mW)−I(1mW) Po=3mW Po=3mW - *θ // and θ ⊥ are defined as the angle within which the intensity is 50% of the peak value. !Electrical and optical curves 25˚C 40˚C 50˚C 60˚C 4 3 2 1 0 10 20 30 40 50 60 70 80 OPERATING CURRENT : IF (mA) Fig. 1 Optical output vs. operating current 100 90 80 70 60 1.0 RELATIVE OPTICAL INTENSITY THRESHOLD CURRENT : Ith (mA) OPTICAL POWER : PO (mW) 5 50 40 30 20 10 -20 -10 0 10 20 30 40 50 60 70 PACKAGE TEMPERATURE : TC (˚C) Fig. 2 Dependence of threshold current on temperature θ direction θ direction 0.5 0 -40 0 ANGLE (deg) Fig. 3 Far field pattern 40 RLD-78PP-G1 / RLD-78NP-G1 Laser Diodes 780 30 40 50 PO=5mW PO=3mW PO=1mW 775 60 OPTICAL POWER : PO (mW) RELATIVE OPTICAL INTENSITY WAVELENGTH : λ (nm) 785 775 25 5 TC=25˚C OPTICAL POWER : PO=3mW 790 780 785 790 795 PACKAGE TEMPERATURE : Tc (˚C) WAVELENGTH : λ (nm) Fig. 4 Dependence of wavelength on temperature Fig. 5 Dependence of emission spectrum on optical output dP=30% 15% 14 10% TC=60˚C 25˚C 12 50 DROOP (%) TEMPERATURE (˚C) 20% 40 10 8 6 4 30 2 25 1 2 3 4 5 OPTICAL POWER (mW) Fig. 7 Temperature vs. output guidelines for various droop percentages 0 1 2 3 4 3 2 1 0 0.2 0.4 0.6 0.8 1.0 MONITOR CURRENT : Im (mA) 16 60 4 5 6 OPTICAL POWER (mW) Fig. 8 Dependence of droop on output Fig. 6 Monitor current vs. optical output