RLD78NZC3 Laser diodes AlGaAs laser diodes RLD78NZC3 The RLD78NZC3 is one of the world’s first mass-produced laser diodes that is manufactured by molecular beam epitaxy. The characteristics of this laser diode are suitable for high-speed laser printers. !External dimensions (Units : mm) !Applications Laser printers High-speed laser printers Equivalent circuit diagram φ3.6 1.0±0.1 !Features 1) One-third dispersion compared with conventional laser diodes. 2) High-precision, compact package. 3) Low droop. 4) Can be driven by single power supply (N type). φ5.6 +0 −0.025 Glass window (3) N t y p e L.D. P.D. (1) (2) Chip 1.2±0.1 6.5±0.5 2.3 Optical distance 1.35 φ4.4+0 φ1.0Min. 90°±2° 0.4±0.1 3−φ0.45 (3) (2) (1) !Absolute maximum ratings (Tc=25°C) Parameter Reverse voltage Output Laser Symbol Limits Unit PO 10 mW VR 2 V VR (PIN) 30 V Operating temperature Topr −10~+60 °C Storage temperature Tstg −40~+85 °C PIN photodiode 1/3 RLD78NZC3 Laser diodes !Electrical and optical characteristics (Tc=25°C) Parameter Symbol Min. Typ. Max. Unit Threshold current Ith 10 20 45 mA Operating current Iop 20 40 65 mA PO=6mW Operating voltage Vop − 1.9 2.3 V PO=6mW η 0.2 0.4 0.6 mW/mA Differential efficiency Monitor current Conditions − 4mW I(6mW) − I(2mW) PO=6mW Im 0.2 0.4 1.0 mA Parallel divergence angle θ //∗ 8 11 15 deg Perpendicular divergence angle θ ⊥∗ 25 30 38 deg Parallel deviation angle ∆θ // − − ±2 deg Perpendicular deviation angle ∆θ ⊥ − − ±3 deg Emission point accuracy ∆X ∆Y ∆Z − − ±80 µm λ 770 785 795 nm PO=6mW ∆P − 5 10 % PO=6mW Peak emission wavelength Droop PO=6mW − ∗θ// and θ⊥ are defined as the angle within which the intensity is 50% of the peak value. !Electrical and optical characteristic curves 20°C 30°C 40°C 50°C 60°C 6 4 2 0 10 20 30 40 50 60 70 PO=10mW 50 40 30 20 10 −20 −10 80 0 10 20 PO=2mW 0 40 ANGLE (deg) Fig.4 Perpendicular far field pattern RELATIVE OPTICAL INTENSITY OPTICAL POWER PO=4mW 30 40 50 60 −40 70 0 Fig.3 Parallel far field pattern 10 PO=6mW PO=4mW PO=2mW 770 775 780 785 40 ANGLE (deg) PO=10mW TC=25°C PO=6mW PO=4mW Fig.2 Dependence of threshold current on temperature Tc=25°C PO=10mW PO=6mW PACKAGE TEMPERATURE : TC (°C) Fig.1 Optical output vs.operating current PO=8mW PO=8mW PO=2mW OPERATING CURRENT : IF (mA) −40 Tc=25°C OPTICAL INTENSITY : PO (mW) 8 100 90 80 70 60 OPTICAL POWER THRESHOLD CURRENT : Ith (mA) OPTICAL POWER : PO (mW) 10 790 WAVELENGTH : λ (nm) Fig.5 Dependence of emission spectrum on optical output 8 6 4 2 0 0.2 0.4 0.6 0.8 1.0 MONITOR CURRENT : Im (mA) Fig.6 Monitor current vs.optical output 2/3 RLD78NZC3 Laser diodes 790 80 60 60 50 PO=6mW TEMPERATURE (°C) TC=60°C 785 DROOP (%) WAVELENGTH : λ (nm) DRP=30% TC=50°C TC=40°C 40 TC=30°C 780 TC=25°C 20 DRP=20% 40 DRP=10% 30 25 775 20 40 60 PACKAGE TEMPERATURE : TC (°C) Fig.7 Dependence of wavelength on temperature 0 2 4 6 8 OPTICAL POWER (mW) Fig. 8 Dependence of droop on output and temperature 10 0 2 4 6 8 10 OPTICAL POWER (mW) Fig. 9 Temperature vs. output guidelines for various droop percentages 3/3