ETC WED3DG6417V-D2

WED3DG6417V-D2
White Electronic Designs
128MB- 16Mx64 SDRAM UNBUFFERED
FEATURES
DESCRIPTION
n PC100 and PC133 compatible
The WED3DG6417V is a 16Mx64 synchronous DRAM module
which consists of four 16Mx16 SDRAM components in TSOP- 11
package and one 2K EEPROM in an 8- pin TSSOP package for
Serial Presence Detect which are mounted on a 168 Pin DIMM
multilayer FR4 Substrate.
n Burst Mode Operation
n Auto and Self Refresh capability
n LVTTL compatible inputs and outputs
n Serial Presence Detect with EEPROM
n Fully synchronous: All signals are registered on the positive
edge of the system clock
n Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
n 3.3 volt 6 0.3v Power Supply
n 168- Pin DIMM JEDEC
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Front
VSS
DQ0
DQ1
DQ2
DQ3
VDD
DQ4
DQ5
DQ6
DQ7
DQ8
VSS
DQ9
DQ10
DQ11
DQ12
DQ13
VDD
DQ14
DQ15
NC
NC
VSS
NC
NC
VDD
WE
DQM0
Pin
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
Front
DQM1
CS0
DNU
VSS
A0
A2
A4
A6
A8
A10/AP
BA1
VDD
VDD
CLK0
VSS
DNU
CS2
DQM2
DQM3
DNU
VDD
NC
NC
NC
NC
VSS
DQ16
DQ17
Pin
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Front
DQ18
DQ19
VDD
DQ20
NC
NC
NC
VSS
DQ21
DQ22
DQ23
VSS
DQ24
DQ25
DQ26
DQ27
VDD
DQ28
DQ29
DQ30
DQ31
VSS
CLK2
NC
***WP
**SDA
**SCL
VDD
Pin
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Back
VSS
DQ32
DQ33
DQ34
DQ35
VCC
DQ36
DQ37
DQ38
DQ39
DQ40
VSS
DQ41
DQ42
DQ43
DQ44
DQ45
VDD
DQ46
DQ47
*CB4
*CB5
VSS
NC
NC
VDD
CAS
DQM4
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
PIN NAMES
Back
DQM5
CS1
RAS
VSS
A1
A3
A5
A7
A9
BA0
A11
VDD
NC
NC
VSS
CKE0
NC
DQM6
DQM7
NC
VDD
NC
NC
NC
NC
VSS
DQ48
DQ49
Pin
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Back
DQ50
DQ51
VDD
DQ52
NC
NC
DNU
VSS
DQ53
DQ54
DQ55
VSS
DQ56
DQ57
DQ58
DQ59
VDD
DQ60
DQ61
DQ62
DQ63
VSS
NC
NC
**SA0
**SA1
**SA2
VDD
A0 – A11
BA0-1
DQ0-63
CLK0,CLK2
CKE0
CS0,CS2
RAS
CAS
WE
DQM0-7
VDD
VSS
SDA
SCL
DNU
NC
Address input (Multiplexed)
Select Bank
Data Input/Output
Clock input
Clock Enable input
Chip select Input
Row Address Strobe
Column Address Strobe
Write Enable
DQM
Power Supply (3.3V)
Ground
Serial data I/O
Serial clock
Do not use
No Connect
** These pins should be NC in the system which
does not support SPD.
*** WP (write protect) option available on Pin 81,
see ordering information page 5
White Electronic Designs reserves the right to change product or specifications without notice
March 2003 Rev. 1
ECO #16151
1
White Electronic Designs Corporation • (508) 485-4000 • www.whiteedc.com
WED3DG6417V-D2
White Electronic Designs
FUNCTIONAL BLOCK DIAGRAM
E
U5
SERIAL
PD
EEPROM
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000
2
WED3DG6417V-D2
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
VIN, Vout
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
4
50
Units
V
V
°C
W
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: VSS = 0V, TA = 0°C to +70°C)
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
VDD
VIH
VIL
VOH
VOL
ILI
Min
3.0
2.0
-0.3
2.4
—
-10
Typ
Max
Unit
3.3
3.6
V
3.0 VDDQ+0.3 V
—
0.8
V
—
—
V
—
0.4
V
—
10
µA
Note
1
2
IOH= -2mA
IOL= -2mA
3
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is £ 3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is £ 3ns.
3. Any input 0V £ VIN £ VDDQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State
outputs.
CAPACITANCE
(TA = 23°C, f = 1MHz, VDD = 3.3V, VREF=1.4V 6200mV)
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS,CAS,WE)
Input Capacitance (CKE0)
Input Capacitance (CLK0,CLK2)
Input Capacitance (CS0,CS2)
Input Capacitance (DQM0-DQM7)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIN7
Cout
3
Min
-
Max
25
25
25
13
15
10
25
12
Unit
pF
pF
pF
pF
pF
pF
pF
pF
White Electronic Designs Corporation • (508) 485-4000 • www.whiteedc.com
White Electronic Designs
WED3DG6417V-D2
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C to +70°C)
Parameter
Operating Current
(One bank active)
Symbol
ICC1
Precharge Standby Current
in Power Down Mode
ICC2P
ICC2PS
Icc2N
Precharge Standby Current
in Non-Power Down Mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
Icc2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
Operating current (Burst mode)
ICC4
Refresh current
Self refresh current
ICC5
ICC6
Conditions
Burst Length = 1
tRC ³ tRC(min)
IOL = 0mA
CKE £ VIL(max), tCC = 10ns
CKE & CLK £ VIL(max), tCC = ¥
CKE ³ VIH(min), CS ³ VIH(min), tcc = 10ns
Input signals are charged one time during 20
CKE ³ VIH(min), CLK £ VIL(max), tcc = ¥
Input signals are stable
CKE ³ VIL(max), tCC = 10ns
CKE & CLK £ VIL(max), tcc = ¥
CKE ³ VIH(min), CS ³ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
CKE ³ VIH(min), CLK £ VIL(max), tcc = ¥
input signals are stable
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
tRC ³ tRC(min)
CKE £ 0.2V
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VssQ)
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000
4
Version
133
100
520
440
10
10
mA
80
mA
40
25
25
mA
120
mA
100
mA
600
880
Units Note
mA
1
20
520
mA
1
760
mA
mA
2
White Electronic Designs
WED3DG6417V-D2
ORDERING INFORMATION
Part Number
WED3DG6417V10D2
WED3DG6417V7D2
WED3DG6417V75D2
Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
CL=2
CL=3
Part Number
WED3DG6317V10D2
WED3DG6317V7D2
WED3DG6317V75D2
Note: for industrial temperature product add an "I" to the end of the part number.
Example: WED3DG6417V7D2I
Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
CL=2
CL=3
Note: Available with WP write protect on Pin 81
PACKAGE DIMENSIONS
1.100
ALL DIMENSIONS ARE IN INCHES
5
White Electronic Designs Corporation • (508) 485-4000 • www.whiteedc.com
White Electronic Designs
WED3DG6417V-D2
Document Title
WED3DG6417V-D2
Revision History
Rev level
Requested by
Description
Date
A
Paul Marien
Created
December 6, 2001
B
Paul Marien
Add "Part Number" to order info table on page 6
February 13, 2002
0
Paul Marien
Change from advanced to final datasheet
August 13, 2002
1
Paul Marien
Add PC100 and PC133 to features
March 24, 2003
In pin configuration replace all single * with NC
Corrections to pin names
Add note at bottom of page 1
Change phone number at bottom of page 1
Page 5 addtional order block for modules with WP
Add note for industrial part number information
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000
6