SEMTECH MCR100-6

MCR100-3 … MCR100-8
G
K
A
TO-92 Plastic Package
Weight approx. 0.18g
MAXIMUM RATINGS (TJ=25°C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking
Voltage, Note 1
MCR100-3
(TJ=25 to 125°C, RGK=1KΩ)
MCR100-4
VDRM
200
MCR100-5
and
300
MCR100-6
VRRM
400
100
MCR100-7
500
MCR100-8
600
Forward Current RMS
Volts
IT(RMS)
0.8
Amps
ITSM
10
Amps
It
2
0.415
As
PGM
0.1
Watts
PGF(AV)
0.01
Watt
IGFM
1
Amp
VGRM
5
Volts
Operating Junction Temperature Range @ Rated VRRM and VDRM
TJ
-40 to +125
°C
Storage Temperature Range
Ts
-40 to +150
°C
(All Conduction Angles)
Peak Forward Surge Current, TA=25°C
(1/2 Cycle, Sine Wave, 60Hz)
Circuit Fusing (t=8.3ms)
Peak Gate Power - Forward, TA=25°C
Average Gate Power - Forward, TA=25°C
Peak Gate Current - Forward, TA=25°C
(300µs,120PPS)
Peak Gate Voltage - Reverse
2
Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode.
GSP FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003
MCR100-3 … MCR100-8
CHARACTERISTICS (TC=25°C, RGK=1KΩ unless otherwise noted.)
Characteristic
Symbol
Peak Forward or Reverse Blocking Current
Min
Max
Unit
-
10
µA
VTM
-
1.7
Volts
IGT
-
200
µA
VGT
-
0.8
Volts
IH
-
5
mA
IDRM,IRRM
(VAK=Rated VDRM or VRRM)
Forward “On” Voltage
(ITM=1A Peak @TA=25°C)
Gate Trigger Current(Continuous dc),Note 1
(Anode Voltage=7Vdc,RL=100 Ohms)
Gate Trigger Voltage(Continuous dc)
(Anode Voltage=7Vdc,RL=100 Ohms)
(Anode Voltage=Rated VDRM,RL=100 Ohms)
Holding Current
(Anode Voltage=7Vdc,initiating current=20mA)
Note 1. RGK current is not included in measurement.
GSP FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003
MCR100-3 … MCR100-8
Gate Trigger Voltage (volts)
Gate Trigger Current (µA)
100
90
80
70
60
50
40
30
20
10
-25
-40
5
-10
20
35
50
65
80
95
110
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25
50
65
80
95
110
Figure 2. Typical Gate Trigger Voltage
Versus Junction Temperature
Latching Current (µA)
Holding Current (µA)
35
1000
1000
100
-40 -25
-10
5
20
35
50
65
80
95
110
100
10
-40 -25
-10
5
20
35
50
65
80
95
110
TJ, Junction Temperature (〜
C)
Figure 4. Typical Latching Curent Versus
Junction Temperature
TJ, Junction Temperature (〜
C)
Figure 3. Typical Holding Curent Versus
Junction Temperature
TC, Maximum Allowable Case
Temperature (〜
C)
20
TJ, Junction Temperature (〜
C)
TJ, Junction Temperature (〜
C)
Figure 1. Typical Gate Trigger Curent Versus
Junction Temperature
10
5
-10
10
110
100
90
DC
80
180〜
C
70
60
50
40
0
0.1
30〜
C
0.2
60〜
C
0.3
90〜
C
0.4
IT,Instantaneous On-State
Current (AMPS)
120
MAXIMUM @ TJ=25〜
C
MAXIMUM @ TJ=110〜
C
1
0.1
0.5
IT(RMS), RMS On-State Current (AMPS)
Figure 5. Typical RMS Current Derating
0.5 0.8
1.1 1.4
1.7
2.0
2.3
2.6
2.9
3.2
3.5
VT, Instantaneous On-State Voltage (volts)
Figure 6. Typical On-State Characteristics
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 06/12/2003