JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L MCR 100- 6，- 8 Silicon Planar PNPN Thyristor FEATURES Current-IGT : 200 μA ITRMS : 1.KATHODE 0.8 A VDRM : MCR100-6：400 V 2.ANODE MCR100-8：600 V 3.GATE Operating and storage junction temperature range TJ，Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless Parameter Symbol otherwise Test specified） conditions MIN MAX UNIT On state voltage VTM* ITM=1A 1.7 V Gate trigger voltage VGT VAK=7V 0.8 V Peak Repetitive forward and reverse VDRM blocking voltage IDRM= 10 μA ,VMAX=1010 V AND MCR100-6 VRRM MCR100-8 600 Peak forward or reverse blocking IDRM VAK= Rated Current IRRM VDRM or VRRM IHL= 20 mA , Av = 7 V IH Holding current Gate trigger current V 400 10 µA 5 mA A2 5 15 µA A1 15 30 µA A 30 80 µA B 80 200 µA VAK=7V IGT * Forward current applied for 1 ms maximum duration，duty cycle≤1%。 A,Jun,2012