MCR100-6/MCR100-8 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors P b Lead(Pb)-Free SCRs 0.8 A RMS 400/600 Voltage A 1.Cathode 2.Gate 3.Anode G C 1 2 3 TO-92 Maximum Ratings (TA=25°C unless otherwise noted) Symbol MCR100-6 MCR100-8 Unit Repetitive Peak Off-stage Voltage VDRM 400 600 V Collector-Base Voltage ITRMS 0.8 A Junction Temperature Range TJ +150 °C Storage Temperature Range Tstg -55 to +150 °C Rating ELECTRICAL CHARACTERISTICS Symbol Min Max Unit On State Voltage(1) ITM = 1A VTM - 1.7 V Gate Trigger Voltage VAK = 7V VGT - 0.8 V VDRM, VRRM 400 600 - IDRM, IRRM - 10 μA IH - 5 mA 5 15 30 80 15 30 80 200 μA Characteristics Peak Repetitve Forward and Reverse Blocking Voltage IDRM = 10μA , VMAX = 10V MCR100-6 MCR100-8 Peak Forward or Reverse Blocking Current VAK = Rated, VDRM or VRRM Holding Current IHL = 20mA, AV = 7V Gate Trigger Current VAK = 7V IGT A2 A1 A B V Note 1. Forward current applied for 1 ms maximum duration, duty cycle ≤ 1% WE ITR O N http://www.weitron.com.tw 1/2 30-Jan-07 MCR100-6/MCR100-8 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 D A B G TO-92 WEITRON http://www.weitron.com.tw 2/2 30-Jan-07