AN2145NFHP, AN2146FHP, AN2147FHP CCD Video Camera Signal Processor ICs ■ Overview 12.0±0.2 14.0±0.2 Unit:mm 1 0.2 (0.5) (min0.25) 12.0±0.2 ■ Features 1.3±0.1 0.15 +– 0.1 0.05 1.3±0.1 2.8±0.2 0.5 0.1±0.1 The AN2145NFHP is a CCD video camera signal processor IC for 510H CCD. It incorporates full chroma signal LPFs and horizontal aperture correction circuits. Because carrier-balance is rationalized and ajustment-free, adjustments and necessary external components are reduced half in number as compared with conventional versions of ours. The AN2146FHP is for 670H CCD, and the AN2147FHP is for 768HCCD. 14.0±0.2 • Improved color reproduction with 4-channel white balance • Built-in high-luminance color-suppression circuit • Improved S/N ratio at low brightness 80-Pin QFH Package (QFH080-P-1212) ■ Absolute Maximum Ratings (Ta=25 ˚C) Parameter Symbol Rating Unit Supply voltage VCC 5.5 V Supply current ICC 100 mA mW Power dissipation Note 2) PD 357 Operating ambient temperature Note 1) Topr –20 to +75 ˚C Storage temperature Tstg –55 to +125 ˚C Note 1) Note 1) Ta=25˚C except operating ambient temperature and storage temperatures unless otherwise specified. Note 2) Allowable power dissipation of the package at Ta=70˚C. ■ Recommended Operating Range (Ta=25˚C) Parameter Operating supply voltage range Symbol Range VCC 4.4V to 4.8V ■ Electrical Characteristics (VCC=4.6V, Ta=25±2˚C) Parameter Symbol Condition min typ max Unit Total circuit current Itot 42 60 78 Reference voltage (or VREF output voltage) VREF 1.68 1.8 1.92 V Pulse separation level CPOB VCPOB 2.1 2.5 2.9 V Pulse separation level PBLK VPBLK 0.6 1.0 1.4 V Pulse separation level CP2 VCP2 2.1 2.5 2.9 V Pulse separation level CBLK VCBLK 0.6 1.0 1.4 V Pulse separation level FH/2 VFH/2 0.6 1.0 1.4 V Pulse separation level SP VSP 0.4 0.8 1.2 V Pulse separation level WBLK VWBLK 0.6 1.0 1.4 V Pulse separation level SYNC VDSYN 1.1 1.5 1.9 V Luminance AGC max. gain VYMAX V65=10STEP 50mVP–P 22.5 26 28.5 dB Luminance AGC mini. gain VYMIN V65=10STEP 1500mVP–P –9 –6 –4 dB Color difference AGC min. gain Note A) VCMAX V65=Sin500kHz 50mVP–P 22.5 26 28.5 dB Color difference AGC max. gain Note A) VCMIN –9 –6 –4 dB Luminance g characteristics (1) VYGAM1 350 470 600 mVP–P Luminance g characteristics (2) VYGAM2 470 630 810 mVP–P Luminance g characteristics (3) VYGAM3 V65=Sin500kHz 1500mVP–P V69=10STEP 1000mVP–P 3rd step V69=10STEP 1000mVP–P 5 step V69=10STEP 1000mVP–P 10 step 720 970 1260 mVP–P Luminance fade characteristics VYFADE –26 dB V16=10STEP 300mVP–P Horizontal AP generation circuit characteristics Note A) VHAP V16=Sin3.5kHz 100mVP–P Base clip characteristics Note B) VBCLIP V11=Sin500kHz 40mVP–P 18.5 22 mA 24.5 dB 60 mVP–P Output luminance signal amplitude VYOUT V29=10STEP 600mVP–P 580 680 800 mVP–P Output high-clip characteristics VHCLIP V29=10STEP 1000mVP–P 800 890 1100 mV Output low-clip characteristics VLCLIP V29=10STEP 200mVP–P (reverse) –50 –28 –12 mV Synchronous signal level VSYNC V29=C–GND 268 295 322 mVP–P Pedestal control characteristics (1) VPED1 V29=C–GND 40 60 100 mV Pedestal control characteristics (2) VPED2 –30 –10 0 mV –20 dB VSW V29=C–GND V20=Sin3.5MHz 600mVP–P (V29=white signal) V65=square wave 500kHz 1VP–P V48, V50, V54, V56=C–GND VSWOFF V48, V50, V54, V56=C–GND Chroma clip characteristics Note B) S/H characteristics Switch level Switch DC offset VCCLIP VSH 300 450 600 mVP–P –12 0 12 mV –30 0 30 mV RWB control characteristics VRWB V56=10STEP 200mVP–P 420 580 760 mVP–P CY+G control characteristics VCYG V54=10STEP 200mVP–P 420 580 760 mVP–P BWB control characteristics VBWB V50=10STEP 200mVP–P 420 580 760 mVP–P YE+G control characteristics VYEG V48=10STEP 200mVP–P 420 580 760 mVP–P R-Y matrix control characteristics VRMAT V50=10STEP 200mVP–P 380 520 710 mVP–P B-Y matrix control characteristics VBMAT V56=10STEP 200mVP–P 380 520 710 mVP–P γ control signal leak VGAML mVP–P VCGAM1 Color difference γ characteristics (2) VCGAM2 V24=10STEP 500mVP–P V22=10STEP 500mVP–P V24=10STEP 1VP–P 3rd step V22=10STEP 500mVP–P V24=10STEP 1VP–P 5 step 100 Color difference γ characteristics (1) Note A) Sine wave with BLK and pedestal Note B) Sine wave with BLK The value in the above characteristics is not a guaranteed value, but reference one on design. 300 410 530 mVP–P 380 530 690 mVP–P ■ Electrical Characteristics (cont.) (VCC=4.6V, Ta=25±2˚C) Parameter Symbol Color difference γ characteristics (3) VCGAM3 Between channels γ characteristics VGAM4 Note B) Color difference gain control characteristics (1) VCGC1 Color difference gain control characteristics (2)Note B) VCGC2 Iris γ characteristics (1) VIGAM1 Iris γ characteristics (2) VIGAM2 Iris γ characteristics (3) VIGAM3 Luminance signal blanking level VYBLK Iris signal blanking level VIBLK R-Y blanking level B-Y blanking level Condition V22=10STEP 500mVP–P V24=10STEP 1VP–P 10 step V23=10STEP 500mVP–P V24=10STEP 1V min typ max Unit 510 720 930 mVP–P –2 0 2 dB V22=Sin500kHz 600mVP–P 700 1150 1500 mVP–P V23=Sin500kHz 600mVP–P V5=10STEP 1VP–P 3rd step V5=10STEP 1VP–P 5 step V5=10STEP 1VP–P 10 step 700 1150 1500 mVP–P 220 300 390 mVP–P 350 480 620 mVP–P 470 630 800 mVP–P V69=C–GND –20 0 20 mV V5=C–GND –20 0 20 mV VRBLK V22=C–GND –20 0 20 mV VBBLK V23=C–GND V54=10STEP 200mVP–P V56=10STEP 200mVP–P –20 0 20 mV 310 450 610 mVP–P dB VVAP VAP generation circuit gain Note C) Edge suppression characteristics (1) Note B) VEDGE1 V22=Sin500kHz 600mVP–P –20 Edge suppression characteristics (2)Note B) VEDGE2 V23=Sin500kHz 600mVP–P –20 dB Luminance high-cut characteristics VHC V65=10STEP 1500mVP–P 350 mV AP mix circuit luminance amplification characteristics VAPY V16=10STEP 300mVP–P 6.9 dB VAPDL V16=Sin3.5MHz 100mVP–P 120 ns Aperture mix circuit HAP gain Note B) VAPHAP V13=Sin3.5MHz 600mVP–P 3.4 dB Aperture mix circuit VAP gain Note B, E) VAPVAP V11=Sin500kHz 600mVP–P 3.3 dB Aperture suppression characteristics Note B) VLLSP V13=Sin3.5MHz 600mVP–P –12 dB V16=Vref V37=Sin500kHz 500mVP–P (V38=0.5V) V42=Sin500kHz 500mVP–P (V41=0.5V) V37=Sin500kHz 500mVP–P (V38=3.0V) V42=Sin500kHz 500mVP–P (V41=3.0V) V22=V23=Sin500kHz 600mVP–P (V5=white) 515 mV 0 dB 0 dB 8 dB 8 dB –26 dB Horizontal APDL group delay Note A, D) White fade characteristics VWFADE Delay signal amp. gain (1)Note A) VDLAMP1 Delay signal amp. gain (2)Note A) VDLAMP2 Delay signal amp. gain (3)Note A) VDLAMP3 Delay signal amp. gain (4)Note A) VDLAMP4 Color difference high-clip characteristics Note B) VCHC Color difference fade characteristics Note B) VCFADE V22=V23=Sin500kHz 600mVP–P –26 dB dB VSHLPF V65=Sin3.5MHz 1500mVP–P –30 Color difference LPF characteristics Note B) VCLPF V22=V23=Sin3.5MHz 600mVP–P –26 dB VAP LPF characteristics (1)Note A) VVLPF1 V48=V50=Sin500kHz 200mVP–P 0 dB VAP LPF characteristics (2)Note A) VVLPF2 V48=V50=Sin3.5MHz 200mVP–P –25 dB Edge HPF characteristics Note A) VEHPF V54=V56=Sin500kHz 500mVP–P –4 dB S/H LPF characteristics Note A) Note A) Sine waves with BLK and pedestal Note B) Sine waves with BLK Note C) For the AN2147FHP, 450mVP-P min., 665mVP-P typ., and 880mVP-P max. under the conditions V48=10STEP 200mVP-P and V50=10STEP 200mVP-P. Note D) 90ns typ. for the AN2146FHP and the AN2147FHP Note E) 6.0dB typ. for the AN2147FHP The value in the above characteristics is not a guaranteed value, but reference one on design. ■ Pin Descriptions Pin No. Pin name Pin name Pin No. Pin No. Pin name Pin No. Pin name 1 2 R–Y·Out WBLK·In 21 Dclamp 22 R–Y·In 41 YE1·Gain 42 YE1·In 61 SP1·In 62 SP2·In 3 Iris·Out 23 B–Y·In 43 YE+G·Gain 63 CAGC·Cont 4 BLK·Out 24 C γ ·Cont 44 CY+Mg·Out 64 GND2 5 Iris·In 25 Edge·Test 45 BWB·Gain 65 Sig·In 6 BW·Fade 26 Ped·Set 46 YE+G·Out 66 YAGC·Cont 7 Fade·In 27 GND1 47 CY+G·Gain 67 HC·Cont 8 R–Y·Gain 28 Y·Out 48 YE2·In 68 YAGC·Out 9 Fade·Out 29 Y·In 49 Vref2 (Typ. 1.8V In) 69 γ · In 10 B–Y·Gain 30 R–Y·Matrix 50 CY2·In 70 Knee·Cont 11 VAP·In 31 RG·Out 51 CY+G·Out 71 YDC·Cont 12 Vref1 (Typ. 1.8V In) 32 B–Y·Matrix 52 VCC3 (Typ. 4.6V) 72 Vre (Typ. 1.8V Out) 13 HAP·In 33 BG·Out 53 YE+MG·Out 73 SSG·In (Cp2, C. Blk) 14 HAP·Out 34 Drive·In (Cpob, P. Blk) 54 CY0·In 74 BDC·Cont 15 Sync·In 35 FH2·In 55 RWB·Gain 75 γ · Out 16 DL·In 36 VCC2 (Typ. 4.6V) 56 YE0·In 76 RDC·Cont 17 Chroma·Clip 37 CY1·In 57 VAP·Out 77 High·Clip 18 Chroma·Out 38 CY1·Gain 58 CY·Out 78 SUPP·Cont 19 VCC1 (Typ. 4.6V) 20 Chroma·In 39 CY1·Out 40 YE1·Out 59 YE·Out 60 VAP·Test 79 B–Y·Out 80 SUPP·Set ■ Reference PD–Ta 1000 900 Power dissipation PD (mW) 800 714mW 700 600 500 θj–a=140˚C/W 400 300 200 100 0 0 25 50 75 100 125 (Tjmax) Ambient temperature Ta (˚C) ■ Block Diagrams (AN2145NFHP,AN2146FHP) 10kΩ 10kΩ ATT 1H DL 1H DL GAIN Cont. ATT 1H DL 1H DL GAIN Cont. 5.6kΩ × 4 YE 1.8V CY CY+G GAIN RWB typ. VREF typ. VREF YE+G GAIN BWB typ. VREF YE1 GAIN typ. 2.0V typ. VREF N 1.0µF YE1IN 30kΩ 0.1µF 2.4V ±700mV 60 SP2 0.1µF VAPTEST YEOUT CYOUT VAPOUT YEDIN 59 58 57 56 0.1µF YE+MG CYOIN 55 54 typ. 500mV 1.8V 22kΩ× 4 typ.500mV 1.8V 53 CY+G 52 CY2IN 51 YE+G CY+MG YE2IN 50 49 VCC 4.6V 0.8V 0.1µF 48 47 46 45 44 43 42 41 VREF 1.8V 157ns SP1 0.8V + 61 157ns GAIN CONT 40 GAIN CONT 39 0.1µF 33µF CAGC CONT 62 3.3kΩ – 330kΩ + 63 CAGC CONT 64 3.3kΩ CAGC 330kΩ 3.3kΩ typ. 3.3V + 0.1µF YAGC CONT + – BLK (P.BLK) R WB LPF CLAMP (CPOB) BLK (P.BLK) CY+G GAIN CLAMP (CP2) H1GH CUT YAGC CLAMP (CPOB) BLK (P.BLK) B WB CLAMP (CPOB) BLK (P.BLK) YE+G GAIN 66 YAGC CONT HC CONT Y 0.1µF typ.500mV 1.5V GAM IN 68 69 0.1µF KNEE typ. Opes 0.047µF typ. 600mVP–P VREF 0.047µF GAM OUT 1.8V BLK (P BLK) VCC 4.6V + BLK (CBLB) R–Y Amp. OR γ.HC EDGE LPF 75 BLK (CBLK) + FADE 78 CLAMP (CPOB) + GATE typ. VREF LOWLUMI SUPP SUPP CONT typ. ±500mV 1.85V typ. ±500mV Y IN HICLIP ±890mV 28 T.OUT 1.0V SYNC PED ±300mV ±50mV 26 PED SET typ. VREF 25 EDGE TEST 2.7V C GAM CONT YDDL B–Y IN 23 (10ns) B/W (P BLK) BLK (P BLK) 3.3µF RG OUT 29 24 (320ns) 80 γ.HC EDGE LPF 1.85V 27 HCLIP LCLIP (–3dB at 1MHz) GAMMA 2.5V 1.0V BG OUT typ. VREF DCCONT (CP2) DL CPOB P BLK 0.1µF HIGH CUT PED BLK (CBLK) 76 77 1.0V 30 CLANP (CP2) CLAMP (CPOB) B–Y Amp. FADE HIGH CLIP FH/2 DRIVE IN R–Y MAT GAMMA CONT CLAMP (CPOB) GAD4 CONT BDC CONT 2.2V 34 B–Y MAT GAD4 CONT 74 SUPP CONT 35 PULSE SEPA 32 (–3dB at 1MHz) PULSE SEPA typ. 300mV 36 FH/2 CONT Det. DCCONT (CP2) FADE typ. 2.0V CPOB PBLK 1IPF + (CP2) 79 SUPPSET typ. VREF GAIN CONT + – typ.500mV CT1 IN 1.8V 37 1.0 µF N CP3 CBLK HIGH CLIP typ. 2.8V B–Y OUT 38 GAIN CONT typ.500mV 2.0V CY1OUT 2.0V CY1 GAIN 31 1.8V VREF RDC CONT typ. ±500mV + 1IPF DC CONT 71 0.047µF 2.3kΩ + – 33 YDC CONT SSG IN 73 ) GAMMA (–3dB at 1MHz) 9dB Amp. GAMMA FH/2 LOW – + LPF CLAMP (CPOB) 70 72 CT2 CBLK ( GAMMA YAGC OUT 22kΩ 1 H D L CLAMP (CPOB) (–3dB at 1MHz) 67 33µF 2.5V 1.0V S/H C 65 3.3kΩ LPF (–3dB at 1MHz) typ.500mV CDS SIG S/H YE1OUT DL DL (90ns) (90ns) 0.1µF R–Y IN 22 0.1µF + 21 0.1µF HAP FADE CONT CLAMP (CPOB) Det. BASE CLIP VCC 4.6V VREF 1.8V 1 2 3 4 5 BLK IRIS OUT IN R–Y OUT 6 7 8 36kΩ typ. ±500mV WBLK IN Y 9 10 FADE OUT N 2.2µF 2.2V 1.0V 0V 1.0V IRIS OUT typ. 500mV 1.0V typ. 500mV B/W FADE typ.(Black)1 1.0V FADE IN R–Y typ. 3.3V GAIN (Through) typ. VREF 11 12 13 14 15 HAP HAP VAP N SYNC IN OUT IN 2.2µF IN 30kΩ VREF 0.22µF B–Y GAIN typ. VREF 16 17 DL IN typ. ±500mV ±400V 18 19 CHROMA OUT 20 0.01µF 2.5V±1000mV 1.8V±750mV 1.8V 1.8V ±280V 1.8V typ. 1.3V ±500mV 1.5V LPF 1kΩ CHROMA OUT typ. VREF 1.0V 1kΩ CHROMA IN Y VREF ■ Block Diagram (AN2147FHP) ATT 1H DL BUFF ATT 1H DL BUFF 5.6kΩ × 4 YE 1.8V CY CY+G GAIN RWB typ. VREF typ. Vref YE+G GAIN BWB typ. VREF YE1 GAIN typ. 2.0V typ. VREF N 10µF 30kΩ 0.1µF 2.4V ±1000mV 60 SP2 0.1µF VAPTEST YEOUT CYOUT VAPOUT YE0IN 59 58 57 0.1µF CY0IN 56 55 54 typ. 300mV 1.5V 22kΩ × 4 typ.500mV 1.8V YE+MG 53 CY+G 52 CY2IN 51 YE+G CY+MG YE1IN YE2IN 50 49 VCC 4.6V 0.8V 0.1µF 48 47 46 45 44 43 42 41 VREF 1.8V 157ns 8.2dB SP1 0.8V + 61 157ns GAIN CONT 40 GAIN CONT 39 0.1µF 33µF CADC CONT 62 3.3kΩ – 330kΩ + 63 CADC CONT 64 3.3kΩ CADC 0.1µF YADC CONT + – 230kΩ 3.3kΩ typ. 3.3V GAM IN 26dB CLAMP (CP2) H1GH CUT YAGC 66 YDL YADC CONT MC CONT BLK (P BLK) BLK (P.BLK) B WB CLAMP (CPOB) BLK (P.BLK) YE+G GAIN typ. 600mVP–P 0.047µF VREF GAM OUT 1.8V 1.0V γ .HC EDGE 30 CLANP (CP3) CLAMP (CPOB) PED BLK (CBLK) γ .HC EDGE LPF RG OUT typ. VREF 1.7V CLAMP (CPOB) SYNC PED 300mV 50mV 26 PCD3CT typ. VREF 25 EDGE TEST 2.7V C GAM CONT YDDL B–Y IN 23 78 (10ns) B/W (P BLK) BLK (P BLK) GATE LOWLUMI SUPP SUPP CONT HICLIP ±850mV 28 Y OUT 24 33µF typ. ±500mV Y IN + (320ns) + 1.85V 29 Y FADE typ. ±500mV 27 HCLIP LCLIP (–3dB at 1MHz) GAMMA 1.85V typ. VREF DCCONT (CP2) DL 2.5V 1.0V BG OUT 0.1µF HIGH CUT CLAMP (CPOB) BLK (CF1 B) B–Y Amp. FADE CPOB P BLK R–Y MAT GAMMA CONT (–3dB at 1MHz) 77 FH/2 DRIVF IN B–Y MAT OR LPF 76 80 34 32 GAIN CONT 75 2.2V 35 Det. GAIN CONT PULSE REPA 79 SUPPSET typ. VREF BLK (CF1B) R–Y Amp. FADE BDC CONT SUPP CONT FH/2 CONT PULSE SEPA CPOB PBLK HPF DCCONT (CP2) 74 HIGH CLIP typ.2.8V BT OUT + HPF (CP2) HIGH CLIP typ. 300mV 1.5V 36 31 1.8V VREF BDC CONT typ. ±500mV + – VCC 4.6V CP2 CBLK 0.047µF 22kΩ ) GAIN CONT + YDC CONT SSG IN 73 typ. 2.0V CY1 IN 33 DC CONT 71 CP2 CBLK ( FH/2 LOW GAMMA (–3dB at 1MHz) 9dB Amp. GAMMA 70 72 38 GAIN CONT typ.500mV CY1OUT 2.0V CY1 GAIN 10µF N CLAMP (CPOB) LPF CLAMP (CP2) + CY+G GAIN GAMMA KNEE typ. Opes 0.047µF BLK (P.BLK) Y 68 69 0.1µF + – typ.500mV 2.0V 37 (200ns) YAGC OUT typ.500mV 1.5V 2.5V 1.0V CLAMP (CPOB) LPF 0.1µF 22kΩ R WB (–3dB at 1MHz) 67 33µF BLK (P.BLK) + – + S/H 26dB C 65 3.3kΩ CLAMP (CPOB) LPF (–3dB at 1MHz) typ.500mV CDS SIG S/H YE1OUT DL DL (120ns) (120ns) 0.1µF R–Y IN 22 0.1µF + 21 0.1µF HAP CLAMP (CPOB) Det. FADE CONT BASE CLIP VCC 4.6V VREF 1.8V 1 2 3 4 5 BLK IRIS OUT IN R–Y OUT 6 7 8 36kΩ typ. ±500mV WBLK IN Y 9 10 FADE OUT N 2.2µF 2.2V 1.0V 0V 1.8V IRISOUT typ. 500mV 1.0V typ. 500mV SW FADE IN R–Y FADE typ. 3.3V GAIN typ.(Black)1 (Through) typ. 1.0V VREF 11 12 13 14 15 HAP HAP VAP N SYNC IN OUT IN 2.2µF IN 30kΩ VREF 0.22µF B–Y GAIN typ. VREF 16 17 DL IN typ. 300mV ±400V 18 19 CHROMA OUT 20 0.01µF 2.5V±1000mV 1.0V±750mV 1.8V 1.8V ±400V 1.8V typ. 1.8V ±660mV 1.5V LPF 1kΩ CHROMA CLIP typ. VREF±1.0V 1kΩ CHROMA IN Y VREF Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). 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