ERB37 (1.0A) ( 800 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Green High reliability Voltage class Applications Cathode mark 02 Lot No. B37 08 Abridged type name High speed switching Maximum ratings and characteristics Absolute maximum ratings Item Symbol Conditions Rating -08 -10 Unit Repetitive peak reverse voltage VRRM 800 1000 V Non-repetitive peak reverse voltage VRSM 800 1000 V Average forward current IF(AV) Resistive load (Tl =125°C) Surge current IFSM Sine wave 10ms Operating junction temperature Storage temperature 1.0 A 30 A Tj -40 to +150 °C Tstg -40 to +150 °C Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Symbol Conditions Forward voltage drop VFM IFM=1.0A Reverse current IRRM VR=VRRM Reverse recovery time t rr IF=0.1A, IR=0.1A Max. 3.0 Unit V 10 µA 250 ns ERB37(1.0A) (800V to 1000V / 1.0A ) Characteristics Reverse characteristics Forward characteristics 10 10 IF [A] 1 1 IR [mA] 0.1 0.1 0.01 0.01 0 1.0 2.0 3.0 VF [V] 0 400 800 1200 1600 VR [V] Current derating (IF(AV)-Tl) Current derating (IF(AV)-Ta) 1.5 0.6 1.0 IF(AV) [A] IF(AV) 0.4 [A] 0.5 0.2 0 0 0 50 100 0 150 50 Ta [°C] 100 150 Tl [°C] Surge capability Junction capacitance characteristics 100 50 30 Cj [pF] 50 IFSM [A] 10 30 5 3 1 10 3 5 10 30 VR [V] 50 100 5 1 3 5 10 [time] (at 50Hz) Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com