FSGYC164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100 krads while maintaining the guaranteed performance for Single Event Effects (SEE) which the Fairchild FS families have always featured. The Fairchild family of Star*Power FETs includes a series of devices in various voltage, current and package styles. The portfolio consists of Star*Power and Star*Power Gold products. Star*Power FETs are optimized for total dose and rDS(ON) while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge combining SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. December 2001 Features • 69A, 150V, rDS(ON) = 0.023Ω • UIS Rated • Total Dose - Meets Pre-Rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias • Dose Rate - Typically Survives 3E9 Rad (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to I AS • Photo Current - 14nA Per-Rad (Si)/s Typically • Neutron - Maintain Pre-Rad Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Symbol D G S Packaging SMD2 Reliability screening is available as either TXV or Space equivalent of MIL-PRF-19500. Formerly available as type TA45229W. Ordering Information RAD LEVEL 10K SCREENING LEVEL PART NUMBER/BRAND Engineering Samples FSGYC164D1 100K TXV FSGYC164R3 100K Space FSGYC164R4 ©2001 Fairchild Semiconductor Corporation FSGYC164R Rev. B FSGYC164R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSGS130R UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 150 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 150 V TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 69 A TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 44 A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 200 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±30 V TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 208 W TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT 83 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/ oC A Continuous Drain Current Maximum Power Dissipation Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS 130 Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 69 A Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 200 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC 3.3 (Typical) g Weight (Typical) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA Zero Gate Voltage Drain Current IDSS VDS = 120V, VGS = 0V Gate to Source Leakage Current IGSS VGS = ±30V Drain to Source On-State Voltage VDS(ON) Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge rDS(ON)12 td(ON) tr td(OFF) Gate Charge Source Qgs Gate Charge Drain Qgd MAX UNITS 150 - - V - - 5.5 V TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC 2.0 - 4.5 V 1.0 - - V - - 25 µA TC = 25oC TC = 125oC - - 250 µA - - 100 nA - - 200 nA - - 1.725 V - 0.017 0.023 Ω - - 0.042 Ω VDD = 75V, ID = 69A, RL = 1.09Ω, VGS = 12V, RGS = 2.35Ω - - 35 ns - - 125 ns - - 65 ns - - 15 ns VGS = 0V to 12V - 100 115 nC - 35 45 nC - 35 45 nC tf Qg(12) TYP TC = -55oC VGS = 12V, ID = 69A ID = 44A, VGS = 12V MIN VDD = 75V, ID = 69A Gate Charge at 20V Qg(20) VGS = 0V to 20V - 160 - nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 12 - nC ID = 69A, VDS = 15V - 7.5 - V Plateau Voltage V(PLATEAU) Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance Thermal Resistance Junction to Case ©2001 Fairchild Semiconductor Corporation VDS = 25V, VGS = 0V, f = 1MHz - 5700 - pF - 1160 - pF CRSS - 45 - pF RθJC - - 0.6 oC/W FSGYC164R Rev. B FSGYC164R Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge TEST CONDITIONS MIN TYP ISD = 69A - - 1.2 V ISD = 69A, dISD/dt = 100A/µs - - 370 ns - 3.2 - µC QRR Electrical Specifications up to 100 krad MAX UNITS TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS V Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 150 - Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 2.0 4.5 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±30V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 120V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 69A - 1.725 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 44A - 0.023 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both V GS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST SYMBOL Single Event Effects Safe Operating Area SEESOA (NOTE 6) TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) (NOTE 7) MAXIMUM VDS BIAS (V) APPLIED VGS BIAS (V) 37 36 -20 150 60 32 -10 150 82 28 -5 120 82 28 -10 90 NOTES: 4. Testing conducted at Brookhaven National Labs or Texas A&M. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au. 7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Performance Curves Unless Otherwise Specified LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 32µ LET = 82MeV/mg/cm2, RANGE = 28µ 200 LET = 37 FLUENCE = 1E5 IONS/cm2 (TYPICAL) 160 VDS (V) VDS (V) 150 100 120 80 LET = 82 50 40 LET = 60 TEMP = 25oC 0 0 0 -4 -8 -12 VGS (V) -16 -20 -24 FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA ©2001 Fairchild Semiconductor Corporation 0 5 10 15 20 25 30 35 40 NEGATIVE VGS BIAS (V) FIGURE 2. TYPICAL SEE SIGNATURE CURVE FSGYC164R Rev. B FSGYC164R Performance Curves Unless Otherwise Specified (Continued) 80 70 1E-4 60 ILM = 10A ID , DRAIN (A) LIMITING INDUCTANCE (HENRY) 1E-3 30A 1E-5 100A 300A 1E-6 50 40 30 20 10 1E-7 10 100 30 300 0 -50 1000 0 50 100 150 TC , CASE TEMPERATURE (oC) DRAIN SUPPLY (V) FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO I AS FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 500 ID , DRAIN CURRENT (A) 250C 100 12V QG 100µs OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10 QGS 1ms QGD VG 10ms 1 1 10 100 500 CHARGE VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. BASIC GATE CHARGE WAVEFORM 2.5 200 ID, DRAIN TO SOURCE CURRENT (A) NORMALIZED rDS(ON) PULSE DURATION = 250ms, VGS = 12V, ID = 44A 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE ©2001 Fairchild Semiconductor Corporation VGS = 14V VGS = 12V VGS = 10V VGS = 8V VGS = 6V 160 120 80 VGS = 6V 40 0 0 2 4 6 8 10 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS FSGYC164R Rev. B FSGYC164R NORMALIZED THERMAL RESPONSE (ZqJC) Performance Curves Unless Otherwise Specified (Continued) 101 100 0.5 10-1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 PDM NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-3 10-5 10-4 10-3 10-2 10-1 t1 t2 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE IAS , AVALANCHE CURRENT (A) 1000 STARTING TJ = 25oC 100 STARTING TJ = 150oC 10 1 0.01 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 0.1 1 10 tAV, TIME IN AVALANCHE (ms) FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS VDD DUT tP VDD + 50Ω VGS ≤ 20V 0V VDS IAS 50V-150V 50Ω tAV FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 12. UNCLAMPED ENERGY WAVEFORMS FSGYC164R Rev. B FSGYC164R Test Circuits and Waveforms (Continued) tON VDD tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% VDS VGS = 12V 10% DUT 10% 0V 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 14. RESISTIVE SWITCHING WAVEFORMS Screening Information Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±30V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value ±25 (Note 7) µA Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID ±20% (Note 8) Ω Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 8) V NOTES: 8. Or 100% of Initial Reading (whichever is greater). 9. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT VGS(PEAK) = 20V, L = 0.1mH; Limit = 130A VGS(PEAK) = 20V, L = 0.1mH; Limit = 130A Thermal Response tH = 10ms; VH = 25V; IH = 4A; LIMIT = 55mV tH = 10ms; VH = 25V; IH = 4A; LIMIT = 55mV Gate Stress VGS = 45V, t = 250µs VGS = 45V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-PRF-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-PRF-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-PRF-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-PRF-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-PRF-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-PRF-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours Unclamped Inductive Switching PDA 10% 5% Final Electrical Tests (Note 9) MIL-PRF-19500, Group A, Subgroup 2 MIL-PRF-19500, Group A, Subgroups 2 and 3 NOTE: 10. Test limits are identical pre and post burn-in. Additional Tests PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Safe Operating Area SOA VDS = 120V, t = 10ms 3.0 A Thermal Impedance ∆VSD tH = 500ms; VH = 20V; IH = 4A HEAT SINK REQUIRED 115 mV ©2001 Fairchild Semiconductor Corporation FSGYC164R Rev. B FSGYC164R Rad Hard Data Packages - Fairchild Power Transistors TXV Equivalent Class S - Equivalents 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE 1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet C. Assembly Flow Chart D. Group A - Attributes Data Sheet D. SEM Photos and Report E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data 2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Pre and Post RAD Read and Record Data F. Group A G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Subgroups C1, C2, C3 and C6 Data I. Group D ©2001 Fairchild Semiconductor Corporation - Attributes Data Sheet - Attributes Data Sheet - Pre and Post Radiation Data FSGYC164R Rev. B