ETC FSGYC164D1

FSGYC164R
Data Sheet
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFET
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low rDS(ON) and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100 krads while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Fairchild FS families have always featured.
The Fairchild family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
rDS(ON) while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
December 2001
Features
• 69A, 150V, rDS(ON) = 0.023Ω
• UIS Rated
• Total Dose
- Meets Pre-Rad Specifications to 100 krad (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 Rad (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to I AS
• Photo Current
- 14nA Per-Rad (Si)/s Typically
• Neutron
- Maintain Pre-Rad Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
G
S
Packaging
SMD2
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45229W.
Ordering Information
RAD LEVEL
10K
SCREENING LEVEL
PART NUMBER/BRAND
Engineering Samples FSGYC164D1
100K
TXV
FSGYC164R3
100K
Space
FSGYC164R4
©2001 Fairchild Semiconductor Corporation
FSGYC164R Rev. B
FSGYC164R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
FSGS130R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
150
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
150
V
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
69
A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
44
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
200
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±30
V
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
208
W
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
83
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/ oC
A
Continuous Drain Current
Maximum Power Dissipation
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS
130
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
69
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
200
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
3.3 (Typical)
g
Weight (Typical)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
Zero Gate Voltage Drain Current
IDSS
VDS = 120V,
VGS = 0V
Gate to Source Leakage Current
IGSS
VGS = ±30V
Drain to Source On-State Voltage
VDS(ON)
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
rDS(ON)12
td(ON)
tr
td(OFF)
Gate Charge Source
Qgs
Gate Charge Drain
Qgd
MAX
UNITS
150
-
-
V
-
-
5.5
V
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
2.0
-
4.5
V
1.0
-
-
V
-
-
25
µA
TC = 25oC
TC = 125oC
-
-
250
µA
-
-
100
nA
-
-
200
nA
-
-
1.725
V
-
0.017
0.023
Ω
-
-
0.042
Ω
VDD = 75V, ID = 69A,
RL = 1.09Ω, VGS = 12V,
RGS = 2.35Ω
-
-
35
ns
-
-
125
ns
-
-
65
ns
-
-
15
ns
VGS = 0V to 12V
-
100
115
nC
-
35
45
nC
-
35
45
nC
tf
Qg(12)
TYP
TC = -55oC
VGS = 12V, ID = 69A
ID = 44A,
VGS = 12V
MIN
VDD = 75V,
ID = 69A
Gate Charge at 20V
Qg(20)
VGS = 0V to 20V
-
160
-
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
12
-
nC
ID = 69A, VDS = 15V
-
7.5
-
V
Plateau Voltage
V(PLATEAU)
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
©2001 Fairchild Semiconductor Corporation
VDS = 25V, VGS = 0V,
f = 1MHz
-
5700
-
pF
-
1160
-
pF
CRSS
-
45
-
pF
RθJC
-
-
0.6
oC/W
FSGYC164R Rev. B
FSGYC164R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
TEST CONDITIONS
MIN
TYP
ISD = 69A
-
-
1.2
V
ISD = 69A, dISD/dt = 100A/µs
-
-
370
ns
-
3.2
-
µC
QRR
Electrical Specifications up to 100 krad
MAX
UNITS
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
V
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
150
-
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
2.0
4.5
V
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±30V, VDS = 0V
-
100
nA
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 120V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 69A
-
1.725
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 44A
-
0.023
Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V GS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST
SYMBOL
Single Event Effects Safe Operating Area
SEESOA
(NOTE 6)
TYPICAL LET
(MeV/mg/cm)
TYPICAL RANGE (µ)
(NOTE 7)
MAXIMUM
VDS BIAS
(V)
APPLIED
VGS BIAS
(V)
37
36
-20
150
60
32
-10
150
82
28
-5
120
82
28
-10
90
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm2, RANGE = 32µ
LET = 82MeV/mg/cm2, RANGE = 28µ
200
LET = 37
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
160
VDS (V)
VDS (V)
150
100
120
80
LET = 82
50
40
LET = 60
TEMP = 25oC
0
0
0
-4
-8
-12
VGS (V)
-16
-20
-24
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
0
5
10
15
20
25
30
35
40
NEGATIVE VGS BIAS (V)
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
FSGYC164R Rev. B
FSGYC164R
Performance Curves
Unless Otherwise Specified
(Continued)
80
70
1E-4
60
ILM = 10A
ID , DRAIN (A)
LIMITING INDUCTANCE (HENRY)
1E-3
30A
1E-5
100A
300A
1E-6
50
40
30
20
10
1E-7
10
100
30
300
0
-50
1000
0
50
100
150
TC , CASE TEMPERATURE (oC)
DRAIN SUPPLY (V)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
500
ID , DRAIN CURRENT (A)
250C
100
12V
QG
100µs
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
QGS
1ms
QGD
VG
10ms
1
1
10
100
500
CHARGE
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
200
ID, DRAIN TO SOURCE CURRENT (A)
NORMALIZED rDS(ON)
PULSE DURATION = 250ms, VGS = 12V, ID = 44A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
©2001 Fairchild Semiconductor Corporation
VGS = 14V
VGS = 12V
VGS = 10V
VGS = 8V
VGS = 6V
160
120
80
VGS = 6V
40
0
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
FSGYC164R Rev. B
FSGYC164R
NORMALIZED THERMAL RESPONSE (ZqJC)
Performance Curves
Unless Otherwise Specified
(Continued)
101
100
0.5
10-1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10-2
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3
10-5
10-4
10-3
10-2
10-1
t1
t2
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
IAS , AVALANCHE CURRENT (A)
1000
STARTING TJ = 25oC
100
STARTING TJ = 150oC
10
1
0.01
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
BVDSS
+
CURRENT I
TRANSFORMER AS
tP
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VDD
DUT
tP
VDD
+
50Ω
VGS ≤ 20V
0V
VDS
IAS
50V-150V
50Ω
tAV
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
FSGYC164R Rev. B
FSGYC164R
Test Circuits and Waveforms
(Continued)
tON
VDD
tOFF
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
VDS
VGS = 12V
10%
DUT
10%
0V
90%
RGS
50%
VGS
50%
PULSE WIDTH
10%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
VGS = ±30V
±20 (Note 7)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
±25 (Note 7)
µA
Drain to Source On Resistance
rDS(ON)
TC = 25oC at Rated ID
±20% (Note 8)
Ω
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±20% (Note 8)
V
NOTES:
8. Or 100% of Initial Reading (whichever is greater).
9. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
VGS(PEAK) = 20V, L = 0.1mH; Limit = 130A
VGS(PEAK) = 20V, L = 0.1mH; Limit = 130A
Thermal Response
tH = 10ms; VH = 25V; IH = 4A; LIMIT = 55mV
tH = 10ms; VH = 25V; IH = 4A; LIMIT = 55mV
Gate Stress
VGS = 45V, t = 250µs
VGS = 45V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-PRF-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
MIL-PRF-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests and
Limits Table
All Delta Parameters Listed in the Delta Tests and
Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-PRF-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
MIL-PRF-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
Unclamped Inductive Switching
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-PRF-19500, Group A, Subgroup 2
MIL-PRF-19500, Group A,
Subgroups 2 and 3
NOTE:
10. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
VDS = 120V, t = 10ms
3.0
A
Thermal Impedance
∆VSD
tH = 500ms; VH = 20V; IH = 4A
HEAT SINK REQUIRED
115
mV
©2001 Fairchild Semiconductor Corporation
FSGYC164R Rev. B
FSGYC164R
Rad Hard Data Packages - Fairchild Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
D. SEM Photos and Report
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
F. Group A
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D
©2001 Fairchild Semiconductor Corporation
- Attributes Data Sheet
- Attributes Data Sheet
- Pre and Post Radiation Data
FSGYC164R Rev. B