FSJ9055D, FSJ9055R Semiconductor 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 55A, -60V, rDS(ON) = 0.029Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. • Photo Current - 6.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Ordering Information RAD LEVEL The Harris portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSJ9055D1 10K TXV FSJ9055D3 100K Commercial FSJ9055R1 100K TXV FSJ9055R3 100K Space FSJ9055R4 Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet. Symbol D G Formerly available as type TA17750. S Package TO-254AA G S D CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1998 3-221 File Number 4415.1 FSJ9055D, FSJ9055R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) FSJ9055D, FSJ9055R -60 -60 UNITS V V 55 35 165 ±20 A A A V 125 50 1.20 165 55 165 -55 to 150 300 W W W/ oC A A A oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current SYMBOL BVDSS VGS(TH) IDSS Gate to Source Leakage Current IGSS Drain to Source On-State Voltage VDS(ON) Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA VDS = -48V, VGS = 0V VGS = ±20V MAX UNITS - - V - - -7.0 V -2.0 - -6.0 V -1.0 - - V - - 25 µA - - 250 µA - - 100 nA - - 200 nA - -1.75 V - 0.020 0.029 Ω - - 0.044 Ω - - 55 ns - - 90 ns td(OFF) - - 80 ns tf - - 35 ns - - 250 nC - 130 160 nC - - 16 nC - 36 48 nC rDS(ON)12 td(ON) tr ID = 35A, VGS = -12V TC = 25oC TC = 125oC VDD = -30V, ID = 55A, RL = 0.55Ω, VGS = -12V, RGS = 2.35Ω Qg(TOT) VGS = 0V to -20V Qg(12) VGS = 0V to -12V Threshold Gate Charge Qg(TH) VGS = 0V to -2V Gate Charge Drain TYP 60 - VGS = -12V, ID = 55A Gate Charge at 12V Gate Charge Source TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN VDD = -30V, ID = 55A Qgs - 42 53 nC V(PLATEAU) ID = 55A, VDS = -15V - -6 - V Input Capacitance CISS - 6300 - pF Output Capacitance COSS VDS = -25V, VGS = 0V, f = 1MHz - 2250 - pF Reverse Transfer Capacitance CRSS - 300 - pF Thermal Resistance Junction to Case RθJC - - 0.83 oC/W Thermal Resistance Junction to Ambient RθJA - - 40 oC/W Plateau Voltage Qgd 3-222 FSJ9055D, FSJ9055R Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage Reverse Recovery Time TEST CONDITIONS ISD = 55A VSD MIN TYP MAX UNITS -0.6 - -1.8 V - - 110 ns ISD = 55A, dISD/dt = 100A/µs trr Electrical Specifications up to 100K RAD PARAMETER TC = 25oC, Unless Otherwise Specified MIN MAX UNITS Drain to Source Breakdown Volts (Note 3) SYMBOL BVDSS VGS = 0, ID = 1mA TEST CONDITIONS -60 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA -2.0 -6.0 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = -48V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = -12V, ID = 55A - -1.75 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = -12V, ID = 35A - 0.029 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) (Note 4) ENVIRONMENT (NOTE 5) TEST SYMBOL Single Event Effects Safe Operating Area ION SPECIES SEESOA TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) Ni 26 43 20 -60 Br 37 36 10 -60 Br 37 36 15 -48 Br 37 36 20 -36 Br 60 31 0 -60 I 60 31 5 -48 I 60 31 10 -36 I 60 31 15 -24 I 60 31 20 -12 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Typical Performance Curves Unless Otherwise Specified 1E-3 -70 LIMITING INDUCTANCE (HENRY) LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 31µ FLUENCE = 1E5 IONS/cm2 (TYPICAL) -60 VDS (V) -50 -40 -30 -20 -10 TEMP = 25oC 0 0 5 10 15 20 25 VGS (V) 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 1E-7 -10 -30 -100 -300 DRAIN SUPPLY (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA 3-223 FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS -1000 FSJ9055D, FSJ9055R Typical Performance Curves Unless Otherwise Specified (Continued) 500 70 TC = 25oC ID , DRAIN CURRENT (A) 60 ID , DRAIN (A) 50 40 30 20 100 100µs 1ms 10 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10 0 -50 0 50 100 1 150 1 TC , CASE TEMPERATURE (oC) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 100ms 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 200 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms, VGS = -12V, ID = 35A NORMALIZED rDS(ON) 2.0 -12V QG QGS QGD VG 1.5 1.0 0.5 0.0 -80 CHARGE -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE NORMALIZED THERMAL RESPONSE (ZθJC) 101 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 PDM SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-3 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 3-224 t1 t2 100 101 FSJ9055D, FSJ9055R Typical Performance Curves Unless Otherwise Specified (Continued) IAS , AVALANCHE CURRENT (A) 500 STARTING TJ = 25oC 100 STARTING TJ = 150oC 10 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.1 1 10 tAV , TIME IN AVALANCHE (ms) FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDS IAS VDD + 50Ω - tP VDD 50V-150V DUT 50Ω VGS ≤ 20V tAV FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS 0V 10% DUT VGS = -12V 10% 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 3-225 FSJ9055D, FSJ9055R Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID Gate Threshold Voltage VGS(TH) ID = 1.0mA ±25 (Note 7) µA ±20% (Note 8) Ω ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Gate Stress VGS = -30V, t = 250µs VGS = -30V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching SYMBOL SOA IAS TEST CONDITIONS MAX UNITS VDS = -48V, t = 10ms 11.0 A VGS(PEAK) = -15V, L = 0.1mH 165 A Thermal Response ∆VSD tH = 100ms; VH = -25V; IH = 4A 110 mV Thermal Impedance ∆VSD tH = 500ms; VH = -25V; IH = 4A 190 mV 3-226 FSJ9055D, FSJ9055R Rad Hard Data Packages - Harris Power Transistors C. Preconditioning - Attributes Data Sheet E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data D. Group A - Attributes Data Sheet F. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet G. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet H. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet I. Group D - Attributes Data Sheet TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart 2. Rad Hard Max. “S” Equivalent - Optional Data Package 2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data C. Assembly Flow Chart D. SEM Photos and Report D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C G. Group D - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report 3-227 E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FSJ9055D, FSJ9055R TO-254AA 3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE INCHES A ØP E A1 MIN MAX MIN MAX NOTES Q H1 D A 0.249 0.260 6.33 6.60 - A1 0.040 0.050 1.02 1.27 - Øb 0.035 0.045 0.89 1.14 2, 3 D 0.790 0.800 20.07 20.32 - E 0.535 0.545 13.59 13.84 e e1 0.065 R MAX. TYP. L Øb 1 2 3 e e1 J1 MILLIMETERS SYMBOL 0.150 TYP 0.300 BSC H1 0.245 0.265 J1 0.140 0.160 L 0.520 0.560 ØP 0.139 0.149 Q 0.110 0.130 - 3.81 TYP 4 7.62 BSC 4 6.23 6.73 - 3.56 4.06 4 13.21 14.22 - 3.54 3.78 - 2.80 3.30 - NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC outline TO-254AA dated 11-86. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. WARNING! BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds. 3-228