ETC PUMA2E4001MB-15E

128K x 32 EEPROM Module
PUMA 2/67E4001/A/B -12/15/20
Issue 4.3 : January 2001
Elm Road, West Chirton, North Shields, Tyne & Wear
NE29 8SE, England Tel. +44 (0191) 2930500 Fax. +44 (0191) 2590997
Description
Available in PGA (Puma 2), and JLCC (Puma 67)
footprints, the Puma **E4001 is a 4 Mbit EEPROM
module user configurable as 128K x 32, 256K x 16
or 512K x 8. Available with access times of 120, 150
and 200ns, the device features hardware and software
data protection, 10,000 cycle Write/Erase capability
and 10 year data retention time.
Several pinout variants of the PUMA67 are available
including single and multiple WE variants.
Parts may be screened in accordance with MIL-STD883
Features
• 4 Megabit EEPROM module.
• Access Times of 120/150/200 ns.
• Output Configurable as 32/ 16/ 8 bit wide.
• Upgradeable footprint
• Operating Power 1600/ 830/ 445 mW (Max).
Low Power Standby
2.2 mW (Max).
• Byte and Page Write (128 Bytes) in 5ms typical with
DATA Polling and Toggle bit indication of end of
Write.
• Hardware and Software Data Protection.
• Puma 2 - 66 pin Ceramic PGA.
• Puma 67 - 68 Lead Ceramic JLCC.
• May be screened in accordance with MIL-STD-883.
• 100,000 W/E cycle endurance option
Block Diagram
Block Diagram
PUMA 2E4001, 67E4001A and 67E4001B
PUMA 67E4001A/B
A0~A16
OE
WE4
A0~A16
WE3
OE
WE
WE2
WE1
128K x 8
EEPROM
128K x 8
EEPROM
128K x 8
EEPROM
128K x 8
EEPROM
128K x 8
EEPROM
128K x 8
EEPROM
128K x 8
EEPROM
128K x 8
EEPROM
CS1
CS2
CS3
CS4
D0~7
D8~15
D16~23
D24~31
CS1
CS2
CS3
CS4
D0~7
D8~15
D16~23
D24~31
Pin Functions
A0~A16
CS1~4
OE
GND
Address Input
Chip Select
Output Enable
Ground
D0~D31
WE1~4
Vcc
Data Inputs/Outputs
Write Enables
Power (+5V)
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A /B- 12/15/20
DC OPERATING CONDITIONS
Absolute Maximum Ratings (1)
Operating Temperature
Storage Temperature
Input voltages (including N.C. pins) with Respect to GND
Output voltages with respect to GND
TOPR
TSTG
VIN
VOUT
°
-55 to +125
-65 to +150
-0.6 to +6.25
-0.6 to VCC+0.6
C
C
V
V
°
Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Recommended Operating Conditions
DC Power Supply Voltage
Input Low Voltage
Input High Voltage
Operating Temp Range
VCC
VIL
VIH
TA
TAI
TAM
min
typ
max
4.5
-1.0
2.0
0
-40
-55
5.0
-
5.5
0.8
VCC+1
70
85
125
V
V
V
°
C
°
C (I Suffix)
°
C (M, MB Suffix)
DC Electrical Characteristics (TA=-55°C to +125°C,VCC=5V ± 10%)
Parameter
Symbol
Test Condition
min
Input Leakage Current
Output Leakage Current
ILI1
32 bit ILO
VIN = GND to VCC +1
Operating Supply Current
32 bit ICC32
16 bit ICC16
8 bit ICC8
CS(1)=OE=VIL, WE=VIH, IOUT=0mA, ƒ=5MHz(2)
Standby Supply Current
Output Low Voltage
Output High Voltage
TTL levels ISB1
CMOS levels ISB2
VOL
VOH
max
Unit
-
40
40
µA
µA
-
320
166
89
mA
mA
mA
-
12
1.2
mA
mA
2.4
0.45
-
(1)
VI/O = GND to VCC, CS =VIH
As above
As above
CS(1) = 2.0V to VCC+1V
(1)
CS = VCC-0.3V to VCC+1V
IOL = 2.1mA.
IOH = -400µA.
V
V
Notes (1) CS above are accessed through CS1~4. These inputs must be operated simultaneously for 32 bit operation, in
pairs in 16 bit mode and singly for 8 bit mode.
(2) Also for WE1~4 on the PUMA 2E4001, 67E4001A/B versions. Additionally, WE1~4 are accessed as in note (1)
above.
Capacitance (TA=25°C,ƒ=1MHz) Note: These parameters are calculated, not measured.
Parameter
Input Capacitance
Output Capacitance
Symbol
CS1~4, WE1~4(1)
Other Inputs
CIN1
CIN2
COUT
Test Condition
typ
max Unit
VIN=0V
VIN=0V
-
20
22
pF
pF
VOUT=0V
-
22
pF
Notes: (1) On the PUMA 2E4001, 67E4001A/B versions only.
2
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A/B - 12/15/20
AC OPERATING CONDITIONS
Read Cycle
Parameter
Symnbol min
12
max
min
15
max
20
min
max Unit
Read Cycle Time
tRC
120
-
150
-
200
-
ns
Address Access Time
tAA
-
120
-
150
-
200
ns
Chip Select Access Time
tCS
-
120
-
150
-
200
ns
Output Enable Access Time
tOE
0
60
0
70
0
80
ns
CS or OE to Output Float (2)
tDF
0
60
0
70
0
80
ns
Output Hold from Address Change
tOH
0
-
0
-
0
-
ns
Notes: (1) tHZ max. and tOLZ max. are measured with CL = 5pF, from the point when Chip Select or Output Enable return high
(whichever occurs first) to the time when the outputs are no longer driven. tHZ and tOHZ are shown for reference only:
they are characterized and not tested.
(2) This parameter is characterised and is not 100% tested.
Write Cycle
Parameter
Symbol
min
typ
max
Unit
Write Cycle Time
tWC
-
-
10
ms
Address Set-up Time
tAS
0
-
-
ns
Address Hold Time
tAH
50
-
-
ns
Output Enable Set-up Time
tOES
0
-
-
ns
Output Enable Hold Time
tOEH
0
-
-
ns
Chip Select Set-up Time
tCS
0
-
-
ns
Chip Select Hold Time
tCH
0
-
-
ns
Write Pulse Width
tWP
100
-
-
ns
Write Enable High Recovery
tWPH
50
-
-
ns
Data Set-up Time
tDS
50
-
-
ns
Data Hold Time
tDH
0
-
-
ns
Byte Load Cycle
tBLC
-
-
150
µs
AC Test Conditions
Output Test Load
* Input pulse levels: 0V to 3.0V
* Input rise and fall times: 10ns
* Input and Output timing reference levels: 1.5V
* Output load: 1 TTL gate + 100pF
* VCC=5V±10%
I/O Pin
645 Ω
1.76V
100pF
3
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A /B- 12/15/20
Data Polling Characterisitics (1)
Parameter
Symbol
min
typ
max
Unit
Data Hold Time
tDH
10
-
-
ns
OE Hold Time
tOEH
10
-
-
ns
OE to Output Delay (2)
tOE
-
-
-
ns
Write Recovery Time
tWR
0
-
-
ns
Notes: (1) These parameter are characterised and is not 100% tested.
(2) See AC Read Characteristics.
Toggle Bit Characteristics (1)
Parameter
Symbol
min
typ
max
Unit
Data Hold Time
tDH
10
-
-
ns
OE Hold Time
tOEH
10
-
-
ns
OE to Output Delay (2)
tOE
-
-
-
ns
OE High Pulse
tOEHP
150
-
-
ns
Write Recovery Time
tWR
0
-
-
ns
Notes: (1) These parameter are characterised and is not 100% tested.
(2) See AC Read Characteristics.
4
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A/B - 12/15/20
AC Write Waveform - WE Controlled
t WC
Address
t AS
t AH
t WPH
t WP
WE
t CS
t CH
CS1~4
t OES
OE
tOEH
DATA
t DS
tDH
AC Write Waveform - CS Controlled
t WC
Address
t AS
t CS
t AH
t CH
WE
t WP
CS1~4
t WPH
t OES
OE
t OEH
DATA
t DS
5
t DH
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A /B- 12/15/20
Page Mode Write Waveform
OE
CS1~4
tWPH
tWP
tBLC
WE
tAH
tAS
A0-A16
tDH
Valid
Add
tDS
Valid
Data
Data
Byte 0
Byte 1
Byte 2
Byte 3
Byte 126
Byte 127
tWC
Note: A8 through A16 must specify the page address during each high to low transition of Write Enable (or Chip select).
Output Enable must be high only when Write Enable and Chip Select are both low.
Read Cycle Timing Waveform
tRC
Address Valid
A0~A16
tACC
CS1~4
tOHZ
tCS
tOE
tOHZ
OE
tOH
tOLZ
Data
Output
Valid
HIGH Z
tCLZ
6
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A/B - 12/15/20
DATA Polling Waveform
WE/WE1~4
CS1~4
tOEH
OE
tDH
tOE
tWR
High Z
D7,D15,
D23,D31
An
A0-A16
An
An
An
An
Toggle Bit Waveform
WE/WE1~4
CS1~4
tOEH
OE
tOE
tDH
D6,D14,
D22,D30
tWR
HIGH Z
Software Protected Write Waveform
OE
CS1~4
tWP
t BLC
WE/WE1~4
tAS
tWPH
tAH
A0~A6
BYTE ADDRESS
05555
02AAA
05555
A7~A16
PAGE ADDRESS
tDS
Data
AA
tDH
55
tWC
A0
Byte 0
7
Byte 126
Byte 127
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A /B- 12/15/20
Device Operation
The following description deals with the device, with the references to WE meaning WE1~4 on the 'A' parts.
Read
The device read operations are initiated by both Output Enable and Chip Select LOW. The read operation is
terminated by either Chip Select or Output Enable returning HIGH. This 2-line control architecture elimanates bus
contention in a system environment. The data bus will be in a high impendence state when either Output Enable
or Chip Select is HIGH.
Write
Write operations are initated when both Chip Select and Write Enable are LOW and Output Enable is HIGH. The
device supports both a Chip Select and Write Enable controlled write cycle. That is, the address is latched by the
falling edge of either Chip Select or Write Enable, whichever occurs last. Similarly, the data is latched internally
by the rising edge of either Chip Select or Write Enable, whichever occurs first. A byte write operation, once initiated,
will automatically continue to completion, typically within 5 ms.
Page Mode Write
The page write feature of the device allows the entire memory to be written in 5 seconds. Page Write allows 128
bytes of data to be written prior to the internal programming cycle. The host can fetch data from another location
within the system during a page write operation (change the source address), but the page address (A8 through
A16) for each subsequent valid write cycle to the part during this operation must be the same as the initial page
address.
The page write mode can be initiated during any write operation. Following the initial byte write cycle, the host can
write up to 128 bytes in the same manner as the first byte written. Each successive byte load cycle, started by the
Write Enable HIGH to LOW transition, must begin within 150 µs of the falling edge of the preceding Write Enable.
If a subsequent Write Enable HIGH to LOW transition is not detected within 150 µs, the internal automatic
programming cycle will commence.
DATA Polling
The device features DATA Polling to indicate if the write cycle is completed. During the internal programming cycle,
any attempt to read the last byte written will produce the compliment of that data on D7. Once the programming
is complete, D7 will refect the true data. Note: If the the device is in a protected state and an illegal write operation
is attempted DATA Polling will not operate.
TOGGLE bit
In addition to DATA polling, another method is provided to determine the end of a Write Cycle. During a write
operation successive attempts to read data will result in D6 toggling between 1 and 0. Once a write is complete,
this toggling will stop and valid data will be read.
Hardware Data Protection
The device provides three harware features to protect nonvololitile data from inadvertent writes.
•
•
•
Noise Protection - A Write Enable pulse less than 15 ns will not inditiate a write cycle.
Default VCC Sence - All functions are inhabited when VCC < 3.6 V.
Write Inhibit - Holding either Output Enable LOW, Write Enable HIGH or Chip Select HIGH will prevent an
inadvertent write cycle during power on or power off, maintaining data integrity.
8
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A/B - 12/15/20
Software Data Protection
The device can be automatically protected during power-up and power-down without the need for external circuits
by employing the software data protect feature. The internal software data protection circuit is enabled after the
first write operation utilizing the software algorithm. This circuit is nonvolatile and will remain set for the life of the
device unless the reset command is issued.
Once the software protection is enabled, the device is also protected against inadvertent and accidental writes in
that, the software algorithm must be issued prior to writing additional data to the device.
Operating Modes
The table below shows the logic inputs required to control the operation of the device.
MODE
Read
Write
Standby
Write Inhibit
CS1~4 OE
WE
OUTPUTS
0
0
0
I
1
0
1
X
X
X
X
0
X
1
X
Data Out
Data in
Floating
0 = VIL : 1 = VIH : X = VIH or VIL
9
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A /B- 12/15/20
Software Algorithms
Selecting the software data protection mode requires the host system to precede datawrite operations by a series
of three write operations to three specfic addresses. The three byte sequence opens the page write window
enabling the host to write from from 1 to 128 bytes of data. Once the page load cycle has been completed, the device
will automatically be returned to the data protected state
Software Data Protection Algorithm
Regardless of wheather the device has been protected or not, once the software data protected aglorithm is used
and the data is written, the device will automatically disable further writes unless another command is issued to
cancel it. If no further commands are issued the device will be write protected during power-down and any
subsequent power-up.
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA A0
TO
ADDRESS 5555
WRITES
ENABLED (2)
LOAD DATA XX
TO
ANY ADDRESS (4)
LAST BYTE / WORD
TO
LAST ADDRESS
ENTER DATA
PROTECT
STATE
Notes:
(1) Data Format I/O7-I/O0 (Hex);
Once initiated, this sequence of write operations should not be interrupted.
(2) Enable Write Protect state will be initiated at end of write even if no other data is loaded.
(3) Disable Write Protect state will be initiated at end of write period even if no other data is loaded.
(4) 1 to 128 bytes of data may be loaded.
10
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A/B - 12/15/20
Software Data Protect Disable
In the event the user wants to deactivate the software data protection feature for testing or reprogramming in an
E2PROM programmer. The following six step algorithm will reset the internal protection circuit. After tWC, the device
will be in standard operating mode.
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 20
TO
ADDRESS 5555
LOAD DATA XX
TO
ANY ADDRESS (4)
LAST BYTE / WORD
TO
LAST ADDRESS
11
EXIT DATA
PROTECT
STATE (3)
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A /B- 12/15/20
Package Details
PUMA 67E4001
1.35 (0.053)
0.94 (0.037)
25.40 (1.000) sq.
24.89 (0.980) sq.
24.99 (0.984) sq.
24.49 (0.964) sq.
0.10 (0.004)
5.13
(0.202) max
R=0.76 (0.030) typ.
23.11 (0.910) sq.
24.13 (0.950) sq.
0.64
(0.025) min
20.07 (0.790) sq.
0.43
(0.017) typ.
20.57 (0.810) sq.
21.37 (0.840)
21.08 (0.830)
1.27
(0.050) typ.
PUMA 2E4001
27.58 (1.086) SQ
4.83 (0.190)
27.08 (1.066) SQ
4.32 (0.170)
2.54 (0.010) typ
15.24 (0.60) typ
0.53 (0.021)
0.38 (0.015)
1.40 (0.055)
1.15 (0.045)
1.27 (0.050)
0.66 (0.026)
8.13 (0.320) max
1.52 (0.060)
1.02 (0.040)
12
2.54 (0.010) typ
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A/B - 12/15/20
Pin Definitions
PUMA 67E4001A
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
VIEW
18
52
FROM
19
51
20
50
ABOVE
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
D0
D1
D2
D3
D4
D5
D6
D7
GND
D8
D9
D10
D11
D12
D13
D14
D15
Vcc
A11
A12
A13
A14
A15
A16
D16
D17
D18
D19
D20
D21
D22
D23
GND
D24
D25
D26
D27
D28
D29
D30
D31
NC
WE2
WE3
WE4
NC
GND
NC
PUMA 67E4001A
CS2
PUMA 67E4001
D16
D17
D18
D19
D20
D21
D22
D23
GND
D24
D25
D26
D27
D28
D29
D30
D31
CS1
OE
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
VIEW
18
52
FROM
19
51
20
50
ABOVE
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Vcc
A11
A12
A13
A14
A15
A16
CS1
OE
CS2
NC
NC
NC
NC
NC
GND
NC
D0
D1
D2
D3
D4
D5
D6
D7
GND
D8
D9
D10
D11
D12
D13
D14
D15
NC
A0
A1
A2
A3
A4
A5
CS3
GND
CS4
WE1
A6
A7
A8
A9
A10
VCC
NC
A0
A1
A2
A3
A4
A5
CS3
GND
CS4
WE
A6
A7
A8
A9
A10
VCC
PUMA 67E4001
PUMA 2E4001
NC
A0
A1
A2
A3
A4
A5
CS3
GND
CS4
WE1
A6
A7
A8
A9
A10
A11
PUMA 67E4001B
PUMA 67E4001B
D16
D17
D18
D19
D20
D21
D22
D23
GND
D24
D25
D26
D27
D28
D29
D30
D31
Vcc
A11
A12
A13
A14
A15
A16
CS1
OE
CS2
NC
WE2
WE3
WE4
NC
NC
NC
D0
D1
D2
D3
D4
D5
D6
D7
GND
D8
D9
D10
D11
D12
D13
D14
D15
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
VIEW
18
52
19
51
FROM
20
50
ABOVE
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
13
1
12
23
D8
WE2
D15
34
D24
45
56
VCC
D31
2
13
24
35
46
57
D9
CS2
D14
D25
CS4
D30
3
14
25
36
47
58
D10
GND
D13
D26
WE4
D29
4
15
26
A13
D11
D12
5
16
27
A14
A10
OE
6
17
28
A15
A11
NC
7
18
29
A16
A12
WE1
37
48
59
D27
D28
38
49
60
A7
A3
A0
39
50
61
NC
A4
A1
40
51
62
A8
A5
A2
A6
VIEW
FROM
ABOVE
8
19
30
41
52
63
NC
VCC
D7
A9
WE3
D23
9
20
31
42
53
64
D0
CS1
D6
D16
CS3
D22
10
21
32
43
54
65
D1
NC
D5
D17
GND
D21
11
22
33
44
55
66
D2
D3
D4
D18
D19
D20
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A /B- 12/15/20
Military Screening Procedure
MultiChip Screening Flow for high reliability product is in accordance with Mil-883 method 5004 .
MB MULTICHIP MODULE SCREENING FLOW
SCREEN
TEST METHOD
LEVEL
Visual and Mechanical
Internal visual
Temperature cycle
Constant acceleration
2010 Condition B or manufacturers equivalent
1010 Condition C (10 Cycles,-65oC to +150oC)
2001 Condition B (Y1 & Y2) (10,000g)
100%
100%
100%
Endurance
Write Cycle endurance and
As per Internal Specification.
Data Retention performance
Burn-In
Pre-Burn-in electrical
Burn-in
Per applicable device specifications at TA=+25oC
TA=+125oC,160hrs min
Final Electrical Tests
Per applicable Device Specification
Static (DC)
a) @ TA=+25oC and power supply extremes
b) @ temperature and power supply extremes
100%
100%
Functional
a) @ TA=+25oC and power supply extremes
b) @ temperature and power supply extremes
100%
100%
Switching (AC)
a) @ TA=+25oC and power supply extremes
b) @ temperature and power supply extremes
100%
100%
Percent Defective allowable (PDA)
Calculated at post-burn-in at TA=+25oC
Hermeticity
1014
Fine
Gross
Condition A
Condition C
Quality Conformance
External Visual
Per Applicable Device Specification
2009 Per vendor or customer specification
14
100%
100%
10%
100%
100%
Sample
100%
ISSUE 4.3 : January 2001
PUMA 2/67E4001/A/B - 12/15/20
Ordering Information
PUMA 2E4001AMB-12E
Blank = 10,000 W/E cycle endurance
E
= 100,000 W/E cycle endurance
Speed
12
15
20
= 120 ns
= 150 ns
= 200 ns
Temp. range/screening
Blank
I
M
MB
=
=
=
=
WE Option
Blank = Single WE (PUMA 67 only)
WE1~4 (PUMA 2 only)
A
= WE1~4 (PUMA 67 only)
B
= PUMA67 pinout variant
Organisation
4001 = 128Kx 32, user confiurable as
256K x 16 and 512K x 8
Technology
E
Package
Commercial Temperature
Industrial Temperature
Military Temperature
Processed in accordance with
MIL-STD-883
= EEPROM MEMORY
PUMA 2
= JEDEC 66 Pin Ceramic PGA package
PUMA 67
= JEDEC 68 J-Leaded Ceramic Surface
Mount package
Note :
Although this data is believed to be accurate, the information contained herein is not intended to and does not create any
warranty of merchantibility or fitness for a particular purpose.
Our products are subject to a constant process of development. Data may be changed at any time without notice.
Products are not authorised for use as critical components in life support devices without the express written approval of a
company director.
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